JPS53979A - Preparation of semiconductor device - Google Patents
Preparation of semiconductor deviceInfo
- Publication number
- JPS53979A JPS53979A JP7435176A JP7435176A JPS53979A JP S53979 A JPS53979 A JP S53979A JP 7435176 A JP7435176 A JP 7435176A JP 7435176 A JP7435176 A JP 7435176A JP S53979 A JPS53979 A JP S53979A
- Authority
- JP
- Japan
- Prior art keywords
- preparation
- semiconductor device
- drain
- difference
- impurity concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To enhance the dielectic strength of a drain by increasing the dielectric strength of a gate making use of a difference in the thickness of SiO2 based on a difference in the impurity concentration and keeping constant the impurity concentration on the surfaces of the source and drain.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7435176A JPS53979A (en) | 1976-06-25 | 1976-06-25 | Preparation of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7435176A JPS53979A (en) | 1976-06-25 | 1976-06-25 | Preparation of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53979A true JPS53979A (en) | 1978-01-07 |
Family
ID=13544607
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7435176A Pending JPS53979A (en) | 1976-06-25 | 1976-06-25 | Preparation of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53979A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4605519A (en) * | 1983-12-09 | 1986-08-12 | The Dow Chemical Company | O- and S-(2-mercaptoalkyl)- mono- or dihydrocarbyl carbamothioates and S-(2-mercaptoalkyl)mono- or dihydrocarbyl carbamodithioates |
JPH06104429A (en) * | 1992-09-18 | 1994-04-15 | Rohm Co Ltd | Mos transistor |
US6238978B1 (en) * | 1999-11-05 | 2001-05-29 | Advanced Micro Devices, Inc | Use of etch to blunt gate corners |
-
1976
- 1976-06-25 JP JP7435176A patent/JPS53979A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4605519A (en) * | 1983-12-09 | 1986-08-12 | The Dow Chemical Company | O- and S-(2-mercaptoalkyl)- mono- or dihydrocarbyl carbamothioates and S-(2-mercaptoalkyl)mono- or dihydrocarbyl carbamodithioates |
JPH06104429A (en) * | 1992-09-18 | 1994-04-15 | Rohm Co Ltd | Mos transistor |
US6238978B1 (en) * | 1999-11-05 | 2001-05-29 | Advanced Micro Devices, Inc | Use of etch to blunt gate corners |
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