JPS53100779A - Production of insulated gate type semiconductor device - Google Patents

Production of insulated gate type semiconductor device

Info

Publication number
JPS53100779A
JPS53100779A JP1466077A JP1466077A JPS53100779A JP S53100779 A JPS53100779 A JP S53100779A JP 1466077 A JP1466077 A JP 1466077A JP 1466077 A JP1466077 A JP 1466077A JP S53100779 A JPS53100779 A JP S53100779A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
type semiconductor
insulated gate
gate type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1466077A
Other languages
Japanese (ja)
Inventor
Yuji Takeshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1466077A priority Critical patent/JPS53100779A/en
Publication of JPS53100779A publication Critical patent/JPS53100779A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To improve the characteristics of IGFETs by forming source and drain regions through ion implantation with gate electrodes as a mask without removing gate oxide film.
COPYRIGHT: (C)1978,JPO&Japio
JP1466077A 1977-02-15 1977-02-15 Production of insulated gate type semiconductor device Pending JPS53100779A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1466077A JPS53100779A (en) 1977-02-15 1977-02-15 Production of insulated gate type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1466077A JPS53100779A (en) 1977-02-15 1977-02-15 Production of insulated gate type semiconductor device

Publications (1)

Publication Number Publication Date
JPS53100779A true JPS53100779A (en) 1978-09-02

Family

ID=11867360

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1466077A Pending JPS53100779A (en) 1977-02-15 1977-02-15 Production of insulated gate type semiconductor device

Country Status (1)

Country Link
JP (1) JPS53100779A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62101068A (en) * 1985-10-28 1987-05-11 Hitachi Ltd Semiconductor integrated circuit device
WO1998034275A1 (en) * 1997-01-31 1998-08-06 Seiko Epson Corporation Semiconductor device incorporating mos element and method for manufacturing the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4997576A (en) * 1973-01-17 1974-09-14
JPS50106588A (en) * 1974-01-29 1975-08-22
JPS5189390A (en) * 1975-02-03 1976-08-05
JPS51105476A (en) * 1975-03-11 1976-09-18 Teijin Ltd

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4997576A (en) * 1973-01-17 1974-09-14
JPS50106588A (en) * 1974-01-29 1975-08-22
JPS5189390A (en) * 1975-02-03 1976-08-05
JPS51105476A (en) * 1975-03-11 1976-09-18 Teijin Ltd

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62101068A (en) * 1985-10-28 1987-05-11 Hitachi Ltd Semiconductor integrated circuit device
WO1998034275A1 (en) * 1997-01-31 1998-08-06 Seiko Epson Corporation Semiconductor device incorporating mos element and method for manufacturing the same
US6337250B2 (en) 1997-01-31 2002-01-08 Seiko Epson Corporation Semiconductor device containing MOS elements and method of fabricating the same

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