JPS53100779A - Production of insulated gate type semiconductor device - Google Patents
Production of insulated gate type semiconductor deviceInfo
- Publication number
- JPS53100779A JPS53100779A JP1466077A JP1466077A JPS53100779A JP S53100779 A JPS53100779 A JP S53100779A JP 1466077 A JP1466077 A JP 1466077A JP 1466077 A JP1466077 A JP 1466077A JP S53100779 A JPS53100779 A JP S53100779A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- type semiconductor
- insulated gate
- gate type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Non-Volatile Memory (AREA)
Abstract
PURPOSE: To improve the characteristics of IGFETs by forming source and drain regions through ion implantation with gate electrodes as a mask without removing gate oxide film.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1466077A JPS53100779A (en) | 1977-02-15 | 1977-02-15 | Production of insulated gate type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1466077A JPS53100779A (en) | 1977-02-15 | 1977-02-15 | Production of insulated gate type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53100779A true JPS53100779A (en) | 1978-09-02 |
Family
ID=11867360
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1466077A Pending JPS53100779A (en) | 1977-02-15 | 1977-02-15 | Production of insulated gate type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53100779A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62101068A (en) * | 1985-10-28 | 1987-05-11 | Hitachi Ltd | Semiconductor integrated circuit device |
WO1998034275A1 (en) * | 1997-01-31 | 1998-08-06 | Seiko Epson Corporation | Semiconductor device incorporating mos element and method for manufacturing the same |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4997576A (en) * | 1973-01-17 | 1974-09-14 | ||
JPS50106588A (en) * | 1974-01-29 | 1975-08-22 | ||
JPS5189390A (en) * | 1975-02-03 | 1976-08-05 | ||
JPS51105476A (en) * | 1975-03-11 | 1976-09-18 | Teijin Ltd |
-
1977
- 1977-02-15 JP JP1466077A patent/JPS53100779A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4997576A (en) * | 1973-01-17 | 1974-09-14 | ||
JPS50106588A (en) * | 1974-01-29 | 1975-08-22 | ||
JPS5189390A (en) * | 1975-02-03 | 1976-08-05 | ||
JPS51105476A (en) * | 1975-03-11 | 1976-09-18 | Teijin Ltd |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62101068A (en) * | 1985-10-28 | 1987-05-11 | Hitachi Ltd | Semiconductor integrated circuit device |
WO1998034275A1 (en) * | 1997-01-31 | 1998-08-06 | Seiko Epson Corporation | Semiconductor device incorporating mos element and method for manufacturing the same |
US6337250B2 (en) | 1997-01-31 | 2002-01-08 | Seiko Epson Corporation | Semiconductor device containing MOS elements and method of fabricating the same |
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