JPS53125777A - Manufacture for field effect transistor - Google Patents

Manufacture for field effect transistor

Info

Publication number
JPS53125777A
JPS53125777A JP4052877A JP4052877A JPS53125777A JP S53125777 A JPS53125777 A JP S53125777A JP 4052877 A JP4052877 A JP 4052877A JP 4052877 A JP4052877 A JP 4052877A JP S53125777 A JPS53125777 A JP S53125777A
Authority
JP
Japan
Prior art keywords
manufacture
field effect
effect transistor
narrowing
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4052877A
Other languages
Japanese (ja)
Inventor
Tadatoshi Nozaki
Keiichi Ohata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4052877A priority Critical patent/JPS53125777A/en
Publication of JPS53125777A publication Critical patent/JPS53125777A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To manufacture a GaAs Schottky barrier gate FET excellent in high frequency characteristics, by narrowing the size of Al ion implantation mask with etching and taking it as a gate electrode as it is.
COPYRIGHT: (C)1978,JPO&Japio
JP4052877A 1977-04-08 1977-04-08 Manufacture for field effect transistor Pending JPS53125777A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4052877A JPS53125777A (en) 1977-04-08 1977-04-08 Manufacture for field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4052877A JPS53125777A (en) 1977-04-08 1977-04-08 Manufacture for field effect transistor

Publications (1)

Publication Number Publication Date
JPS53125777A true JPS53125777A (en) 1978-11-02

Family

ID=12582968

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4052877A Pending JPS53125777A (en) 1977-04-08 1977-04-08 Manufacture for field effect transistor

Country Status (1)

Country Link
JP (1) JPS53125777A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5885567A (en) * 1981-11-16 1983-05-21 Fujitsu Ltd Manufacture of semiconductor device
JPS5885569A (en) * 1981-11-16 1983-05-21 Fujitsu Ltd Manufacture of semiconductor device
JPS58132977A (en) * 1982-02-02 1983-08-08 Toshiba Corp Preparation of schotkky gate type gaas field effect transistor
JPH0249436A (en) * 1989-03-18 1990-02-19 Fujitsu Ltd Manufacture of semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5885567A (en) * 1981-11-16 1983-05-21 Fujitsu Ltd Manufacture of semiconductor device
JPS5885569A (en) * 1981-11-16 1983-05-21 Fujitsu Ltd Manufacture of semiconductor device
JPS6257265B2 (en) * 1981-11-16 1987-11-30 Fujitsu Ltd
JPS6354227B2 (en) * 1981-11-16 1988-10-27 Fujitsu Ltd
JPS58132977A (en) * 1982-02-02 1983-08-08 Toshiba Corp Preparation of schotkky gate type gaas field effect transistor
JPS6312391B2 (en) * 1982-02-02 1988-03-18 Tokyo Shibaura Electric Co
JPH0249436A (en) * 1989-03-18 1990-02-19 Fujitsu Ltd Manufacture of semiconductor device
JPH0515303B2 (en) * 1989-03-18 1993-03-01 Fujitsu Ltd

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