JPS53125777A - Manufacture for field effect transistor - Google Patents
Manufacture for field effect transistorInfo
- Publication number
- JPS53125777A JPS53125777A JP4052877A JP4052877A JPS53125777A JP S53125777 A JPS53125777 A JP S53125777A JP 4052877 A JP4052877 A JP 4052877A JP 4052877 A JP4052877 A JP 4052877A JP S53125777 A JPS53125777 A JP S53125777A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- field effect
- effect transistor
- narrowing
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To manufacture a GaAs Schottky barrier gate FET excellent in high frequency characteristics, by narrowing the size of Al ion implantation mask with etching and taking it as a gate electrode as it is.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4052877A JPS53125777A (en) | 1977-04-08 | 1977-04-08 | Manufacture for field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4052877A JPS53125777A (en) | 1977-04-08 | 1977-04-08 | Manufacture for field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53125777A true JPS53125777A (en) | 1978-11-02 |
Family
ID=12582968
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4052877A Pending JPS53125777A (en) | 1977-04-08 | 1977-04-08 | Manufacture for field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53125777A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5885567A (en) * | 1981-11-16 | 1983-05-21 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS5885569A (en) * | 1981-11-16 | 1983-05-21 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS58132977A (en) * | 1982-02-02 | 1983-08-08 | Toshiba Corp | Preparation of schotkky gate type gaas field effect transistor |
JPH0249436A (en) * | 1989-03-18 | 1990-02-19 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1977
- 1977-04-08 JP JP4052877A patent/JPS53125777A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5885567A (en) * | 1981-11-16 | 1983-05-21 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS5885569A (en) * | 1981-11-16 | 1983-05-21 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS6257265B2 (en) * | 1981-11-16 | 1987-11-30 | Fujitsu Ltd | |
JPS6354227B2 (en) * | 1981-11-16 | 1988-10-27 | Fujitsu Ltd | |
JPS58132977A (en) * | 1982-02-02 | 1983-08-08 | Toshiba Corp | Preparation of schotkky gate type gaas field effect transistor |
JPS6312391B2 (en) * | 1982-02-02 | 1988-03-18 | Tokyo Shibaura Electric Co | |
JPH0249436A (en) * | 1989-03-18 | 1990-02-19 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH0515303B2 (en) * | 1989-03-18 | 1993-03-01 | Fujitsu Ltd |
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