JPS52101984A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS52101984A
JPS52101984A JP1872676A JP1872676A JPS52101984A JP S52101984 A JPS52101984 A JP S52101984A JP 1872676 A JP1872676 A JP 1872676A JP 1872676 A JP1872676 A JP 1872676A JP S52101984 A JPS52101984 A JP S52101984A
Authority
JP
Japan
Prior art keywords
preparation
semiconductor device
mosic
piercing
employing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1872676A
Other languages
Japanese (ja)
Other versions
JPS5915189B2 (en
Inventor
Takashi Shimada
Kenichi Inoue
Jiro Yamaguchi
Hidenobu Mochizuki
Koji Otsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP51018726A priority Critical patent/JPS5915189B2/en
Publication of JPS52101984A publication Critical patent/JPS52101984A/en
Publication of JPS5915189B2 publication Critical patent/JPS5915189B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To prepare MOSIC of high integration by employing an ion injection method, and by piercing an aperture of source, drain and separation region with one time mask self matching of common mask.
COPYRIGHT: (C)1977,JPO&Japio
JP51018726A 1976-02-23 1976-02-23 Manufacturing method of semiconductor device Expired JPS5915189B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51018726A JPS5915189B2 (en) 1976-02-23 1976-02-23 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51018726A JPS5915189B2 (en) 1976-02-23 1976-02-23 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS52101984A true JPS52101984A (en) 1977-08-26
JPS5915189B2 JPS5915189B2 (en) 1984-04-07

Family

ID=11979661

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51018726A Expired JPS5915189B2 (en) 1976-02-23 1976-02-23 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5915189B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS592369A (en) * 1982-06-28 1984-01-07 Fujitsu Ltd Semiconductor device
JPS6016456A (en) * 1983-06-15 1985-01-28 Yokogawa Hewlett Packard Ltd Semiconductor device
JPS6097663A (en) * 1983-10-07 1985-05-31 エヌ・ベー・フイリツプス・フルーイランペンフアブリケン Integrated circuit
JPS61140164A (en) * 1984-12-12 1986-06-27 Fuji Electric Co Ltd Manufacture of semiconductor ic
JPH02197166A (en) * 1989-10-20 1990-08-03 Seiko Epson Corp High breakdown strength mos type semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS592369A (en) * 1982-06-28 1984-01-07 Fujitsu Ltd Semiconductor device
JPS6016456A (en) * 1983-06-15 1985-01-28 Yokogawa Hewlett Packard Ltd Semiconductor device
JPH0351108B2 (en) * 1983-06-15 1991-08-05 Hewlett Packard Co
JPS6097663A (en) * 1983-10-07 1985-05-31 エヌ・ベー・フイリツプス・フルーイランペンフアブリケン Integrated circuit
JPH0321101B2 (en) * 1983-10-07 1991-03-20 Fuiritsupusu Furuuiranpenfuaburiken Nv
JPS61140164A (en) * 1984-12-12 1986-06-27 Fuji Electric Co Ltd Manufacture of semiconductor ic
JPH0369184B2 (en) * 1984-12-12 1991-10-31 Fuji Electric Co Ltd
JPH02197166A (en) * 1989-10-20 1990-08-03 Seiko Epson Corp High breakdown strength mos type semiconductor device

Also Published As

Publication number Publication date
JPS5915189B2 (en) 1984-04-07

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