JPS52101984A - Preparation of semiconductor device - Google Patents
Preparation of semiconductor deviceInfo
- Publication number
- JPS52101984A JPS52101984A JP1872676A JP1872676A JPS52101984A JP S52101984 A JPS52101984 A JP S52101984A JP 1872676 A JP1872676 A JP 1872676A JP 1872676 A JP1872676 A JP 1872676A JP S52101984 A JPS52101984 A JP S52101984A
- Authority
- JP
- Japan
- Prior art keywords
- preparation
- semiconductor device
- mosic
- piercing
- employing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To prepare MOSIC of high integration by employing an ion injection method, and by piercing an aperture of source, drain and separation region with one time mask self matching of common mask.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51018726A JPS5915189B2 (en) | 1976-02-23 | 1976-02-23 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51018726A JPS5915189B2 (en) | 1976-02-23 | 1976-02-23 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52101984A true JPS52101984A (en) | 1977-08-26 |
JPS5915189B2 JPS5915189B2 (en) | 1984-04-07 |
Family
ID=11979661
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51018726A Expired JPS5915189B2 (en) | 1976-02-23 | 1976-02-23 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5915189B2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS592369A (en) * | 1982-06-28 | 1984-01-07 | Fujitsu Ltd | Semiconductor device |
JPS6016456A (en) * | 1983-06-15 | 1985-01-28 | Yokogawa Hewlett Packard Ltd | Semiconductor device |
JPS6097663A (en) * | 1983-10-07 | 1985-05-31 | エヌ・ベー・フイリツプス・フルーイランペンフアブリケン | Integrated circuit |
JPS61140164A (en) * | 1984-12-12 | 1986-06-27 | Fuji Electric Co Ltd | Manufacture of semiconductor ic |
JPH02197166A (en) * | 1989-10-20 | 1990-08-03 | Seiko Epson Corp | High breakdown strength mos type semiconductor device |
-
1976
- 1976-02-23 JP JP51018726A patent/JPS5915189B2/en not_active Expired
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS592369A (en) * | 1982-06-28 | 1984-01-07 | Fujitsu Ltd | Semiconductor device |
JPS6016456A (en) * | 1983-06-15 | 1985-01-28 | Yokogawa Hewlett Packard Ltd | Semiconductor device |
JPH0351108B2 (en) * | 1983-06-15 | 1991-08-05 | Hewlett Packard Co | |
JPS6097663A (en) * | 1983-10-07 | 1985-05-31 | エヌ・ベー・フイリツプス・フルーイランペンフアブリケン | Integrated circuit |
JPH0321101B2 (en) * | 1983-10-07 | 1991-03-20 | Fuiritsupusu Furuuiranpenfuaburiken Nv | |
JPS61140164A (en) * | 1984-12-12 | 1986-06-27 | Fuji Electric Co Ltd | Manufacture of semiconductor ic |
JPH0369184B2 (en) * | 1984-12-12 | 1991-10-31 | Fuji Electric Co Ltd | |
JPH02197166A (en) * | 1989-10-20 | 1990-08-03 | Seiko Epson Corp | High breakdown strength mos type semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS5915189B2 (en) | 1984-04-07 |
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