JPS53129980A - Production of mos semiconductor device - Google Patents
Production of mos semiconductor deviceInfo
- Publication number
- JPS53129980A JPS53129980A JP4446177A JP4446177A JPS53129980A JP S53129980 A JPS53129980 A JP S53129980A JP 4446177 A JP4446177 A JP 4446177A JP 4446177 A JP4446177 A JP 4446177A JP S53129980 A JPS53129980 A JP S53129980A
- Authority
- JP
- Japan
- Prior art keywords
- mos semiconductor
- production
- semiconductor device
- diffusion
- elimiante
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To elimiante the variations in the threshold voltages of MOS semiconductor devices of diffusion self-alignment structure, avert the increase in contact area and improve the scale of integration by combining a diffusion method and ion implantation method thereby eliminating the defects of both.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4446177A JPS53129980A (en) | 1977-04-20 | 1977-04-20 | Production of mos semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4446177A JPS53129980A (en) | 1977-04-20 | 1977-04-20 | Production of mos semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53129980A true JPS53129980A (en) | 1978-11-13 |
Family
ID=12692123
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4446177A Pending JPS53129980A (en) | 1977-04-20 | 1977-04-20 | Production of mos semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53129980A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5418283A (en) * | 1977-07-12 | 1979-02-10 | Agency Of Ind Science & Technol | Manufacture of double diffusion type insulating gate fet |
JPS55132073A (en) * | 1979-03-29 | 1980-10-14 | Siemens Ag | Method of fabricating mis field effect transistor |
-
1977
- 1977-04-20 JP JP4446177A patent/JPS53129980A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5418283A (en) * | 1977-07-12 | 1979-02-10 | Agency Of Ind Science & Technol | Manufacture of double diffusion type insulating gate fet |
JPS6139750B2 (en) * | 1977-07-12 | 1986-09-05 | Kogyo Gijutsuin | |
JPS55132073A (en) * | 1979-03-29 | 1980-10-14 | Siemens Ag | Method of fabricating mis field effect transistor |
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