JPS5377182A - Production of mos type semiconductor device - Google Patents

Production of mos type semiconductor device

Info

Publication number
JPS5377182A
JPS5377182A JP15304176A JP15304176A JPS5377182A JP S5377182 A JPS5377182 A JP S5377182A JP 15304176 A JP15304176 A JP 15304176A JP 15304176 A JP15304176 A JP 15304176A JP S5377182 A JPS5377182 A JP S5377182A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
type semiconductor
mos type
shallowing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15304176A
Other languages
Japanese (ja)
Inventor
Katsuyuki Inayoshi
Kazutoshi Miyao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15304176A priority Critical patent/JPS5377182A/en
Publication of JPS5377182A publication Critical patent/JPS5377182A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To achieve the improvement in yield and the reduction in cost by reducing masking processes at the time of shallowing threshold voltage by implanting B+ ions a P channels through gate oxide film.
COPYRIGHT: (C)1978,JPO&Japio
JP15304176A 1976-12-20 1976-12-20 Production of mos type semiconductor device Pending JPS5377182A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15304176A JPS5377182A (en) 1976-12-20 1976-12-20 Production of mos type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15304176A JPS5377182A (en) 1976-12-20 1976-12-20 Production of mos type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5377182A true JPS5377182A (en) 1978-07-08

Family

ID=15553669

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15304176A Pending JPS5377182A (en) 1976-12-20 1976-12-20 Production of mos type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5377182A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5736420A (en) * 1993-08-20 1998-04-07 National Semiconductor Corporation Process for fabricating read only memories, with programming step performed midway through the fabrication process

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4968681A (en) * 1972-11-06 1974-07-03
JPS4979185A (en) * 1972-12-04 1974-07-31
JPS51117581A (en) * 1975-04-07 1976-10-15 Mitsubishi Electric Corp Manufacturing method of mos type semiconductor equipment

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4968681A (en) * 1972-11-06 1974-07-03
JPS4979185A (en) * 1972-12-04 1974-07-31
JPS51117581A (en) * 1975-04-07 1976-10-15 Mitsubishi Electric Corp Manufacturing method of mos type semiconductor equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5736420A (en) * 1993-08-20 1998-04-07 National Semiconductor Corporation Process for fabricating read only memories, with programming step performed midway through the fabrication process

Similar Documents

Publication Publication Date Title
JPS5279679A (en) Semiconductor memory device
JPS5222480A (en) Insulating gate field effect transistor
JPS5422781A (en) Insulator gate protective semiconductor device
JPS5470762A (en) Semiconductor device
JPS5382179A (en) Field effect transistor
JPS5377182A (en) Production of mos type semiconductor device
JPS5275187A (en) Mos type semiconductor device
JPS53149771A (en) Mis-type semiconductor device and its manufacture
JPS538074A (en) Mis type semiconductor device
JPS5315772A (en) Mis semiconductor device and its production
JPS5278389A (en) Semiconductor memory device
JPS52146568A (en) Production of silicon gate mos type semiconductor integrated circuit device
JPS5211776A (en) Method of manufacturing semiconductor device
JPS5339884A (en) Production of insulated gate type semiconductor
JPS52135273A (en) Mos type semiconductor device
JPS52123878A (en) Mos type semiconductor device and its production process
JPS53129980A (en) Production of mos semiconductor device
JPS52123179A (en) Mos type semiconductor device and its production
JPS52104879A (en) Manufacture of semiconductor device
JPS51147188A (en) Semicoductor device
JPS5275275A (en) Production of mos type semiconductor device
JPS51117581A (en) Manufacturing method of mos type semiconductor equipment
JPS52147983A (en) Insulation gate type semiconductor device
JPS539481A (en) Production of semiconductor device
JPS52100875A (en) Mos transistor