JPS5275275A - Production of mos type semiconductor device - Google Patents

Production of mos type semiconductor device

Info

Publication number
JPS5275275A
JPS5275275A JP15257175A JP15257175A JPS5275275A JP S5275275 A JPS5275275 A JP S5275275A JP 15257175 A JP15257175 A JP 15257175A JP 15257175 A JP15257175 A JP 15257175A JP S5275275 A JPS5275275 A JP S5275275A
Authority
JP
Japan
Prior art keywords
semiconductor device
type semiconductor
mos type
production
recesses
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15257175A
Other languages
Japanese (ja)
Inventor
Takeya Ezaki
Takashi Hirao
Kenzo Hatada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP15257175A priority Critical patent/JPS5275275A/en
Publication of JPS5275275A publication Critical patent/JPS5275275A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To obtain a high performance MOS type semiconductor device by making recesses encircled by oxide through oxidation of the poly Si on a substrate from its lateral face and forming gate electrodes in these in these recesses.
COPYRIGHT: (C)1977,JPO&Japio
JP15257175A 1975-12-19 1975-12-19 Production of mos type semiconductor device Pending JPS5275275A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15257175A JPS5275275A (en) 1975-12-19 1975-12-19 Production of mos type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15257175A JPS5275275A (en) 1975-12-19 1975-12-19 Production of mos type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5275275A true JPS5275275A (en) 1977-06-24

Family

ID=15543378

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15257175A Pending JPS5275275A (en) 1975-12-19 1975-12-19 Production of mos type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5275275A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5736867A (en) * 1980-08-15 1982-02-27 Nippon Telegr & Teleph Corp <Ntt> Mis field effect transistor device and manufacture thereof
JPS58118113A (en) * 1981-12-30 1983-07-14 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of producing semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5736867A (en) * 1980-08-15 1982-02-27 Nippon Telegr & Teleph Corp <Ntt> Mis field effect transistor device and manufacture thereof
JPS58118113A (en) * 1981-12-30 1983-07-14 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of producing semiconductor device
JPH0480532B2 (en) * 1981-12-30 1992-12-18 Intaanashonaru Bijinesu Mashiinzu Corp

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