JPS534480A - Production of semiconductor device having mis transistors - Google Patents
Production of semiconductor device having mis transistorsInfo
- Publication number
- JPS534480A JPS534480A JP7860676A JP7860676A JPS534480A JP S534480 A JPS534480 A JP S534480A JP 7860676 A JP7860676 A JP 7860676A JP 7860676 A JP7860676 A JP 7860676A JP S534480 A JPS534480 A JP S534480A
- Authority
- JP
- Japan
- Prior art keywords
- mis transistors
- production
- semiconductor device
- depending
- size
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Local Oxidation Of Silicon (AREA)
Abstract
PURPOSE: To make MIS transistors smaller in size by forming silicon gate electrodes through thermal oxidation without depending on etching treatment.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51078606A JPS6038876B2 (en) | 1976-07-02 | 1976-07-02 | Manufacturing method of semiconductor device having MIS transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51078606A JPS6038876B2 (en) | 1976-07-02 | 1976-07-02 | Manufacturing method of semiconductor device having MIS transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS534480A true JPS534480A (en) | 1978-01-17 |
JPS6038876B2 JPS6038876B2 (en) | 1985-09-03 |
Family
ID=13666534
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51078606A Expired JPS6038876B2 (en) | 1976-07-02 | 1976-07-02 | Manufacturing method of semiconductor device having MIS transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6038876B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54116886A (en) * | 1978-03-02 | 1979-09-11 | Nec Corp | Manufacture of semiconductor device |
JPS5552269A (en) * | 1978-10-11 | 1980-04-16 | Nec Corp | Preparation of semiconductor device |
JPS5561037A (en) * | 1978-10-31 | 1980-05-08 | Toshiba Corp | Preparation of semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51112187A (en) * | 1975-03-28 | 1976-10-04 | Matsushita Electric Ind Co Ltd | Processing method of semiconductor equipment |
JPS5272582A (en) * | 1975-12-15 | 1977-06-17 | Matsushita Electric Ind Co Ltd | Production of semiconductor device |
-
1976
- 1976-07-02 JP JP51078606A patent/JPS6038876B2/en not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51112187A (en) * | 1975-03-28 | 1976-10-04 | Matsushita Electric Ind Co Ltd | Processing method of semiconductor equipment |
JPS5272582A (en) * | 1975-12-15 | 1977-06-17 | Matsushita Electric Ind Co Ltd | Production of semiconductor device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54116886A (en) * | 1978-03-02 | 1979-09-11 | Nec Corp | Manufacture of semiconductor device |
JPS5552269A (en) * | 1978-10-11 | 1980-04-16 | Nec Corp | Preparation of semiconductor device |
JPS5561037A (en) * | 1978-10-31 | 1980-05-08 | Toshiba Corp | Preparation of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6038876B2 (en) | 1985-09-03 |
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