JPS534480A - Production of semiconductor device having mis transistors - Google Patents

Production of semiconductor device having mis transistors

Info

Publication number
JPS534480A
JPS534480A JP7860676A JP7860676A JPS534480A JP S534480 A JPS534480 A JP S534480A JP 7860676 A JP7860676 A JP 7860676A JP 7860676 A JP7860676 A JP 7860676A JP S534480 A JPS534480 A JP S534480A
Authority
JP
Japan
Prior art keywords
mis transistors
production
semiconductor device
depending
size
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7860676A
Other languages
Japanese (ja)
Other versions
JPS6038876B2 (en
Inventor
Tetsuo Hosoya
Junichi Murota
Susumu Muramoto
Minoru Hirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP51078606A priority Critical patent/JPS6038876B2/en
Publication of JPS534480A publication Critical patent/JPS534480A/en
Publication of JPS6038876B2 publication Critical patent/JPS6038876B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE: To make MIS transistors smaller in size by forming silicon gate electrodes through thermal oxidation without depending on etching treatment.
COPYRIGHT: (C)1978,JPO&Japio
JP51078606A 1976-07-02 1976-07-02 Manufacturing method of semiconductor device having MIS transistor Expired JPS6038876B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51078606A JPS6038876B2 (en) 1976-07-02 1976-07-02 Manufacturing method of semiconductor device having MIS transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51078606A JPS6038876B2 (en) 1976-07-02 1976-07-02 Manufacturing method of semiconductor device having MIS transistor

Publications (2)

Publication Number Publication Date
JPS534480A true JPS534480A (en) 1978-01-17
JPS6038876B2 JPS6038876B2 (en) 1985-09-03

Family

ID=13666534

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51078606A Expired JPS6038876B2 (en) 1976-07-02 1976-07-02 Manufacturing method of semiconductor device having MIS transistor

Country Status (1)

Country Link
JP (1) JPS6038876B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54116886A (en) * 1978-03-02 1979-09-11 Nec Corp Manufacture of semiconductor device
JPS5552269A (en) * 1978-10-11 1980-04-16 Nec Corp Preparation of semiconductor device
JPS5561037A (en) * 1978-10-31 1980-05-08 Toshiba Corp Preparation of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51112187A (en) * 1975-03-28 1976-10-04 Matsushita Electric Ind Co Ltd Processing method of semiconductor equipment
JPS5272582A (en) * 1975-12-15 1977-06-17 Matsushita Electric Ind Co Ltd Production of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51112187A (en) * 1975-03-28 1976-10-04 Matsushita Electric Ind Co Ltd Processing method of semiconductor equipment
JPS5272582A (en) * 1975-12-15 1977-06-17 Matsushita Electric Ind Co Ltd Production of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54116886A (en) * 1978-03-02 1979-09-11 Nec Corp Manufacture of semiconductor device
JPS5552269A (en) * 1978-10-11 1980-04-16 Nec Corp Preparation of semiconductor device
JPS5561037A (en) * 1978-10-31 1980-05-08 Toshiba Corp Preparation of semiconductor device

Also Published As

Publication number Publication date
JPS6038876B2 (en) 1985-09-03

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