JPS52113684A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS52113684A
JPS52113684A JP3016076A JP3016076A JPS52113684A JP S52113684 A JPS52113684 A JP S52113684A JP 3016076 A JP3016076 A JP 3016076A JP 3016076 A JP3016076 A JP 3016076A JP S52113684 A JPS52113684 A JP S52113684A
Authority
JP
Japan
Prior art keywords
semiconductor device
mosfet
junctions
transistors
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3016076A
Other languages
Japanese (ja)
Inventor
Yoshiyuki Takagi
Takeshi Ishihara
Takeya Ezaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3016076A priority Critical patent/JPS52113684A/en
Publication of JPS52113684A publication Critical patent/JPS52113684A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568Lateral single gate silicon transistors
    • H01L29/66651Lateral single gate silicon transistors with a single crystalline channel formed on the silicon substrate after insulating device isolation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568Lateral single gate silicon transistors
    • H01L29/66659Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To improve the mutual conductances of transistors and make possible high speed operation by electrically floating the channel forming regions of a C-MOSFET from a substrate at PN junctions.
COPYRIGHT: (C)1977,JPO&Japio
JP3016076A 1976-03-19 1976-03-19 Semiconductor device Pending JPS52113684A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3016076A JPS52113684A (en) 1976-03-19 1976-03-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3016076A JPS52113684A (en) 1976-03-19 1976-03-19 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS52113684A true JPS52113684A (en) 1977-09-22

Family

ID=12295992

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3016076A Pending JPS52113684A (en) 1976-03-19 1976-03-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS52113684A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55111178A (en) * 1979-02-20 1980-08-27 Mitsubishi Electric Corp Field-effect semiconductor device
JPS5623781A (en) * 1979-08-02 1981-03-06 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device
JPS5629369A (en) * 1979-08-17 1981-03-24 Nippon Telegr & Teleph Corp <Ntt> Insulated gate type field effect transistor
JPS56140662A (en) * 1980-04-02 1981-11-04 Mitsubishi Electric Corp Manufacture of field effect semiconductor of insulation gate complementary type
EP0042552A2 (en) * 1980-06-16 1981-12-30 Kabushiki Kaisha Toshiba MOS type semiconductor device
JPS583286A (en) * 1981-06-30 1983-01-10 Fujitsu Ltd Floating channel mosfet
EP0730307A2 (en) * 1995-02-28 1996-09-04 STMicroelectronics, Inc. FET technology with dielectrically isolated sources and drains
US6593174B2 (en) 1995-02-28 2003-07-15 Stmicroelectronics, Inc. Field effect transistor having dielectrically isolated sources and drains and method for making same

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55111178A (en) * 1979-02-20 1980-08-27 Mitsubishi Electric Corp Field-effect semiconductor device
JPS5623781A (en) * 1979-08-02 1981-03-06 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device
JPS5629369A (en) * 1979-08-17 1981-03-24 Nippon Telegr & Teleph Corp <Ntt> Insulated gate type field effect transistor
JPS56140662A (en) * 1980-04-02 1981-11-04 Mitsubishi Electric Corp Manufacture of field effect semiconductor of insulation gate complementary type
JPH0312475B2 (en) * 1980-04-02 1991-02-20 Mitsubishi Electric Corp
EP0042552A2 (en) * 1980-06-16 1981-12-30 Kabushiki Kaisha Toshiba MOS type semiconductor device
JPS583286A (en) * 1981-06-30 1983-01-10 Fujitsu Ltd Floating channel mosfet
EP0730307A2 (en) * 1995-02-28 1996-09-04 STMicroelectronics, Inc. FET technology with dielectrically isolated sources and drains
EP0730307A3 (en) * 1995-02-28 1999-05-06 STMicroelectronics, Inc. FET technology with dielectrically isolated sources and drains
US6593174B2 (en) 1995-02-28 2003-07-15 Stmicroelectronics, Inc. Field effect transistor having dielectrically isolated sources and drains and method for making same

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