JPS52113684A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS52113684A JPS52113684A JP3016076A JP3016076A JPS52113684A JP S52113684 A JPS52113684 A JP S52113684A JP 3016076 A JP3016076 A JP 3016076A JP 3016076 A JP3016076 A JP 3016076A JP S52113684 A JPS52113684 A JP S52113684A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- mosfet
- junctions
- transistors
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66651—Lateral single gate silicon transistors with a single crystalline channel formed on the silicon substrate after insulating device isolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66659—Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To improve the mutual conductances of transistors and make possible high speed operation by electrically floating the channel forming regions of a C-MOSFET from a substrate at PN junctions.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3016076A JPS52113684A (en) | 1976-03-19 | 1976-03-19 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3016076A JPS52113684A (en) | 1976-03-19 | 1976-03-19 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52113684A true JPS52113684A (en) | 1977-09-22 |
Family
ID=12295992
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3016076A Pending JPS52113684A (en) | 1976-03-19 | 1976-03-19 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52113684A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55111178A (en) * | 1979-02-20 | 1980-08-27 | Mitsubishi Electric Corp | Field-effect semiconductor device |
JPS5623781A (en) * | 1979-08-02 | 1981-03-06 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Semiconductor device |
JPS5629369A (en) * | 1979-08-17 | 1981-03-24 | Nippon Telegr & Teleph Corp <Ntt> | Insulated gate type field effect transistor |
JPS56140662A (en) * | 1980-04-02 | 1981-11-04 | Mitsubishi Electric Corp | Manufacture of field effect semiconductor of insulation gate complementary type |
EP0042552A2 (en) * | 1980-06-16 | 1981-12-30 | Kabushiki Kaisha Toshiba | MOS type semiconductor device |
JPS583286A (en) * | 1981-06-30 | 1983-01-10 | Fujitsu Ltd | Floating channel mosfet |
EP0730307A2 (en) * | 1995-02-28 | 1996-09-04 | STMicroelectronics, Inc. | FET technology with dielectrically isolated sources and drains |
US6593174B2 (en) | 1995-02-28 | 2003-07-15 | Stmicroelectronics, Inc. | Field effect transistor having dielectrically isolated sources and drains and method for making same |
-
1976
- 1976-03-19 JP JP3016076A patent/JPS52113684A/en active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55111178A (en) * | 1979-02-20 | 1980-08-27 | Mitsubishi Electric Corp | Field-effect semiconductor device |
JPS5623781A (en) * | 1979-08-02 | 1981-03-06 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Semiconductor device |
JPS5629369A (en) * | 1979-08-17 | 1981-03-24 | Nippon Telegr & Teleph Corp <Ntt> | Insulated gate type field effect transistor |
JPS56140662A (en) * | 1980-04-02 | 1981-11-04 | Mitsubishi Electric Corp | Manufacture of field effect semiconductor of insulation gate complementary type |
JPH0312475B2 (en) * | 1980-04-02 | 1991-02-20 | Mitsubishi Electric Corp | |
EP0042552A2 (en) * | 1980-06-16 | 1981-12-30 | Kabushiki Kaisha Toshiba | MOS type semiconductor device |
JPS583286A (en) * | 1981-06-30 | 1983-01-10 | Fujitsu Ltd | Floating channel mosfet |
EP0730307A2 (en) * | 1995-02-28 | 1996-09-04 | STMicroelectronics, Inc. | FET technology with dielectrically isolated sources and drains |
EP0730307A3 (en) * | 1995-02-28 | 1999-05-06 | STMicroelectronics, Inc. | FET technology with dielectrically isolated sources and drains |
US6593174B2 (en) | 1995-02-28 | 2003-07-15 | Stmicroelectronics, Inc. | Field effect transistor having dielectrically isolated sources and drains and method for making same |
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