JPS5440575A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5440575A JPS5440575A JP10674677A JP10674677A JPS5440575A JP S5440575 A JPS5440575 A JP S5440575A JP 10674677 A JP10674677 A JP 10674677A JP 10674677 A JP10674677 A JP 10674677A JP S5440575 A JPS5440575 A JP S5440575A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- forming
- layer
- gaas
- epitaxia
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To evade the disconnection of an electrode by forming a GaAs epitaxial layer on a GaAs substrate and by selecting the direction of the gate width by the surface of the epitaxia layer at the time of forming a channel part by mesa-etching so as to form the gentle end part.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10674677A JPS5440575A (en) | 1977-09-07 | 1977-09-07 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10674677A JPS5440575A (en) | 1977-09-07 | 1977-09-07 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5440575A true JPS5440575A (en) | 1979-03-30 |
Family
ID=14441474
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10674677A Pending JPS5440575A (en) | 1977-09-07 | 1977-09-07 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5440575A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS567470A (en) * | 1979-06-29 | 1981-01-26 | Sony Corp | Semiconductor device |
JPS56126976A (en) * | 1980-03-11 | 1981-10-05 | Matsushita Electronics Corp | Field effect transistor |
JPS56152290A (en) * | 1980-03-31 | 1981-11-25 | Western Electric Co | Method of manufacturing mesa device from semiconductor body |
-
1977
- 1977-09-07 JP JP10674677A patent/JPS5440575A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS567470A (en) * | 1979-06-29 | 1981-01-26 | Sony Corp | Semiconductor device |
JPS56126976A (en) * | 1980-03-11 | 1981-10-05 | Matsushita Electronics Corp | Field effect transistor |
JPS56152290A (en) * | 1980-03-31 | 1981-11-25 | Western Electric Co | Method of manufacturing mesa device from semiconductor body |
JPH0152913B2 (en) * | 1980-03-31 | 1989-11-10 | Ei Teii Ando Teii Tekunorojiizu Inc |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS52113684A (en) | Semiconductor device | |
JPS5440575A (en) | Semiconductor device | |
JPS52128063A (en) | Manufacture of semiconductor device | |
JPS533075A (en) | Production of mos structure field effect semiconductor device | |
JPS5329679A (en) | Junction type field effect semiconductor device | |
JPS51114069A (en) | Semiconductor device | |
JPS5415674A (en) | Semiconductor device containing schottky barrier | |
JPS53104162A (en) | Forming method for epitaxial layer on semiconductor wafer | |
JPS538072A (en) | Semiconductor device | |
JPS53125778A (en) | Semiconductor device | |
JPS5228868A (en) | Semiconductor device | |
JPS5421283A (en) | Manufacture for semiconductor device | |
JPS51130169A (en) | Semiconductor device | |
JPS543481A (en) | Field effect type semiconductor switching element | |
JPS52105782A (en) | Semiconductor device | |
JPS52130567A (en) | Preparation of semiconductor device | |
JPS535580A (en) | Field effect type semiconductor device | |
JPS5417679A (en) | Semiconductor device and its manufacture | |
JPS5413273A (en) | Semiconductor device | |
JPS5323579A (en) | Production of semiconductor device | |
JPS5217768A (en) | Production method of semi-conductor device | |
JPS5311574A (en) | Production of semiconductor device | |
JPS5373990A (en) | Semiconductor device | |
JPS5380976A (en) | Semiconductor device | |
JPS5321582A (en) | Mos type semiconductor device |