JPS5440575A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5440575A
JPS5440575A JP10674677A JP10674677A JPS5440575A JP S5440575 A JPS5440575 A JP S5440575A JP 10674677 A JP10674677 A JP 10674677A JP 10674677 A JP10674677 A JP 10674677A JP S5440575 A JPS5440575 A JP S5440575A
Authority
JP
Japan
Prior art keywords
semiconductor device
forming
layer
gaas
epitaxia
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10674677A
Other languages
Japanese (ja)
Inventor
Toshio Usui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10674677A priority Critical patent/JPS5440575A/en
Publication of JPS5440575A publication Critical patent/JPS5440575A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To evade the disconnection of an electrode by forming a GaAs epitaxial layer on a GaAs substrate and by selecting the direction of the gate width by the surface of the epitaxia layer at the time of forming a channel part by mesa-etching so as to form the gentle end part.
COPYRIGHT: (C)1979,JPO&Japio
JP10674677A 1977-09-07 1977-09-07 Semiconductor device Pending JPS5440575A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10674677A JPS5440575A (en) 1977-09-07 1977-09-07 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10674677A JPS5440575A (en) 1977-09-07 1977-09-07 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5440575A true JPS5440575A (en) 1979-03-30

Family

ID=14441474

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10674677A Pending JPS5440575A (en) 1977-09-07 1977-09-07 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5440575A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS567470A (en) * 1979-06-29 1981-01-26 Sony Corp Semiconductor device
JPS56126976A (en) * 1980-03-11 1981-10-05 Matsushita Electronics Corp Field effect transistor
JPS56152290A (en) * 1980-03-31 1981-11-25 Western Electric Co Method of manufacturing mesa device from semiconductor body

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS567470A (en) * 1979-06-29 1981-01-26 Sony Corp Semiconductor device
JPS56126976A (en) * 1980-03-11 1981-10-05 Matsushita Electronics Corp Field effect transistor
JPS56152290A (en) * 1980-03-31 1981-11-25 Western Electric Co Method of manufacturing mesa device from semiconductor body
JPH0152913B2 (en) * 1980-03-31 1989-11-10 Ei Teii Ando Teii Tekunorojiizu Inc

Similar Documents

Publication Publication Date Title
JPS52113684A (en) Semiconductor device
JPS5440575A (en) Semiconductor device
JPS52128063A (en) Manufacture of semiconductor device
JPS533075A (en) Production of mos structure field effect semiconductor device
JPS5329679A (en) Junction type field effect semiconductor device
JPS51114069A (en) Semiconductor device
JPS5415674A (en) Semiconductor device containing schottky barrier
JPS53104162A (en) Forming method for epitaxial layer on semiconductor wafer
JPS538072A (en) Semiconductor device
JPS53125778A (en) Semiconductor device
JPS5228868A (en) Semiconductor device
JPS5421283A (en) Manufacture for semiconductor device
JPS51130169A (en) Semiconductor device
JPS543481A (en) Field effect type semiconductor switching element
JPS52105782A (en) Semiconductor device
JPS52130567A (en) Preparation of semiconductor device
JPS535580A (en) Field effect type semiconductor device
JPS5417679A (en) Semiconductor device and its manufacture
JPS5413273A (en) Semiconductor device
JPS5323579A (en) Production of semiconductor device
JPS5217768A (en) Production method of semi-conductor device
JPS5311574A (en) Production of semiconductor device
JPS5373990A (en) Semiconductor device
JPS5380976A (en) Semiconductor device
JPS5321582A (en) Mos type semiconductor device