JPS5413273A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5413273A JPS5413273A JP7776877A JP7776877A JPS5413273A JP S5413273 A JPS5413273 A JP S5413273A JP 7776877 A JP7776877 A JP 7776877A JP 7776877 A JP7776877 A JP 7776877A JP S5413273 A JPS5413273 A JP S5413273A
- Authority
- JP
- Japan
- Prior art keywords
- concentration
- active region
- semiconductor device
- dielectric
- separation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: To avoid the deterioration in the dielectric strength for the devices having dielectric separation construction, by providing the inversion preventing layer having a relatively high but not ohmic concentration than the concentration of the active region, at the separation wall of the active region of a semiconductor substrate.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7776877A JPS5413273A (en) | 1977-07-01 | 1977-07-01 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7776877A JPS5413273A (en) | 1977-07-01 | 1977-07-01 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5413273A true JPS5413273A (en) | 1979-01-31 |
Family
ID=13643114
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7776877A Pending JPS5413273A (en) | 1977-07-01 | 1977-07-01 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5413273A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63202035A (en) * | 1987-02-17 | 1988-08-22 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS63202034A (en) * | 1987-02-17 | 1988-08-22 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
US7927975B2 (en) | 2009-02-04 | 2011-04-19 | Micron Technology, Inc. | Semiconductor material manufacture |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5029423U (en) * | 1973-07-09 | 1975-04-03 | ||
JPS5037503A (en) * | 1973-07-05 | 1975-04-08 | ||
JPS52131482A (en) * | 1976-04-28 | 1977-11-04 | Hitachi Ltd | Dielectric insulation/isolation substrate |
-
1977
- 1977-07-01 JP JP7776877A patent/JPS5413273A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5037503A (en) * | 1973-07-05 | 1975-04-08 | ||
JPS5029423U (en) * | 1973-07-09 | 1975-04-03 | ||
JPS52131482A (en) * | 1976-04-28 | 1977-11-04 | Hitachi Ltd | Dielectric insulation/isolation substrate |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63202035A (en) * | 1987-02-17 | 1988-08-22 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS63202034A (en) * | 1987-02-17 | 1988-08-22 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
US7927975B2 (en) | 2009-02-04 | 2011-04-19 | Micron Technology, Inc. | Semiconductor material manufacture |
US8389385B2 (en) | 2009-02-04 | 2013-03-05 | Micron Technology, Inc. | Semiconductor material manufacture |
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