JPS51114069A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS51114069A
JPS51114069A JP3888175A JP3888175A JPS51114069A JP S51114069 A JPS51114069 A JP S51114069A JP 3888175 A JP3888175 A JP 3888175A JP 3888175 A JP3888175 A JP 3888175A JP S51114069 A JPS51114069 A JP S51114069A
Authority
JP
Japan
Prior art keywords
semiconductor device
semiconductor region
electrode
depleticon
disruption
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3888175A
Other languages
Japanese (ja)
Inventor
Takashi Shimada
Akio Kashiwanuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP3888175A priority Critical patent/JPS51114069A/en
Publication of JPS51114069A publication Critical patent/JPS51114069A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: Forming a depleticon layer under electrode by having the fourth semiconductor region corresponding to conductor 2 occur under the electrode extending over the first semiconductor region, and thereby achieving an effective countermeasure against insulation disruption.
COPYRIGHT: (C)1976,JPO&Japio
JP3888175A 1975-03-31 1975-03-31 Semiconductor device Pending JPS51114069A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3888175A JPS51114069A (en) 1975-03-31 1975-03-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3888175A JPS51114069A (en) 1975-03-31 1975-03-31 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS51114069A true JPS51114069A (en) 1976-10-07

Family

ID=12537543

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3888175A Pending JPS51114069A (en) 1975-03-31 1975-03-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS51114069A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5685859A (en) * 1979-12-14 1981-07-13 Fujitsu Ltd High withstand voltage planar transistor
JPS61159762A (en) * 1984-12-31 1986-07-19 Sanken Electric Co Ltd Semiconductor device
JPS61292962A (en) * 1985-06-21 1986-12-23 Hitachi Ltd Semiconductor device
JPS63220572A (en) * 1987-03-09 1988-09-13 Nec Corp Transistor
JPS63244773A (en) * 1987-03-31 1988-10-12 Toshiba Corp Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4931288A (en) * 1972-07-21 1974-03-20
JPS5010106A (en) * 1973-05-24 1975-02-01

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4931288A (en) * 1972-07-21 1974-03-20
JPS5010106A (en) * 1973-05-24 1975-02-01

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5685859A (en) * 1979-12-14 1981-07-13 Fujitsu Ltd High withstand voltage planar transistor
JPS6223472B2 (en) * 1979-12-14 1987-05-22 Fujitsu Ltd
JPS61159762A (en) * 1984-12-31 1986-07-19 Sanken Electric Co Ltd Semiconductor device
JPS61292962A (en) * 1985-06-21 1986-12-23 Hitachi Ltd Semiconductor device
JPS63220572A (en) * 1987-03-09 1988-09-13 Nec Corp Transistor
JPS63244773A (en) * 1987-03-31 1988-10-12 Toshiba Corp Semiconductor device

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