JPS51114069A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS51114069A JPS51114069A JP3888175A JP3888175A JPS51114069A JP S51114069 A JPS51114069 A JP S51114069A JP 3888175 A JP3888175 A JP 3888175A JP 3888175 A JP3888175 A JP 3888175A JP S51114069 A JPS51114069 A JP S51114069A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- semiconductor region
- electrode
- depleticon
- disruption
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: Forming a depleticon layer under electrode by having the fourth semiconductor region corresponding to conductor 2 occur under the electrode extending over the first semiconductor region, and thereby achieving an effective countermeasure against insulation disruption.
COPYRIGHT: (C)1976,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3888175A JPS51114069A (en) | 1975-03-31 | 1975-03-31 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3888175A JPS51114069A (en) | 1975-03-31 | 1975-03-31 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS51114069A true JPS51114069A (en) | 1976-10-07 |
Family
ID=12537543
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3888175A Pending JPS51114069A (en) | 1975-03-31 | 1975-03-31 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51114069A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5685859A (en) * | 1979-12-14 | 1981-07-13 | Fujitsu Ltd | High withstand voltage planar transistor |
JPS61159762A (en) * | 1984-12-31 | 1986-07-19 | Sanken Electric Co Ltd | Semiconductor device |
JPS61292962A (en) * | 1985-06-21 | 1986-12-23 | Hitachi Ltd | Semiconductor device |
JPS63220572A (en) * | 1987-03-09 | 1988-09-13 | Nec Corp | Transistor |
JPS63244773A (en) * | 1987-03-31 | 1988-10-12 | Toshiba Corp | Semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4931288A (en) * | 1972-07-21 | 1974-03-20 | ||
JPS5010106A (en) * | 1973-05-24 | 1975-02-01 |
-
1975
- 1975-03-31 JP JP3888175A patent/JPS51114069A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4931288A (en) * | 1972-07-21 | 1974-03-20 | ||
JPS5010106A (en) * | 1973-05-24 | 1975-02-01 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5685859A (en) * | 1979-12-14 | 1981-07-13 | Fujitsu Ltd | High withstand voltage planar transistor |
JPS6223472B2 (en) * | 1979-12-14 | 1987-05-22 | Fujitsu Ltd | |
JPS61159762A (en) * | 1984-12-31 | 1986-07-19 | Sanken Electric Co Ltd | Semiconductor device |
JPS61292962A (en) * | 1985-06-21 | 1986-12-23 | Hitachi Ltd | Semiconductor device |
JPS63220572A (en) * | 1987-03-09 | 1988-09-13 | Nec Corp | Transistor |
JPS63244773A (en) * | 1987-03-31 | 1988-10-12 | Toshiba Corp | Semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS528785A (en) | Semiconductor device electrode structure | |
JPS51114069A (en) | Semiconductor device | |
JPS52128063A (en) | Manufacture of semiconductor device | |
JPS5269275A (en) | Transistor | |
JPS5228868A (en) | Semiconductor device | |
JPS51146190A (en) | Diode circuit | |
JPS5211772A (en) | Semiconductor device | |
JPS5212572A (en) | Semi-conductor device | |
JPS51118965A (en) | Insulation film of semiconductor device | |
JPS5245252A (en) | Thyristor gate control circuit | |
JPS5373979A (en) | Transistor device | |
JPS528787A (en) | Semiconductor device process | |
JPS5383476A (en) | Reverse conducting thyristor | |
JPS52144276A (en) | Semiconductor device | |
JPS53103383A (en) | Semiconductor device | |
JPS5210683A (en) | Method of manufacturing semiconductor device | |
JPS52154375A (en) | Semiconductor device | |
JPS5286777A (en) | Semiconductor device | |
JPS52101978A (en) | Preparation of semiconductor device on insulating substrate | |
JPS51151089A (en) | Manufacturing method of a semiconductor | |
JPS5417663A (en) | Manufacture of semiconductor device | |
JPS5317283A (en) | Production of semiconductor device | |
JPS5217686A (en) | Cable junctio process | |
JPS52136569A (en) | Beam lead type semiconductor device | |
JPS5285484A (en) | Mis type semiconductor device |