JPS5269275A - Transistor - Google Patents
TransistorInfo
- Publication number
- JPS5269275A JPS5269275A JP14500475A JP14500475A JPS5269275A JP S5269275 A JPS5269275 A JP S5269275A JP 14500475 A JP14500475 A JP 14500475A JP 14500475 A JP14500475 A JP 14500475A JP S5269275 A JPS5269275 A JP S5269275A
- Authority
- JP
- Japan
- Prior art keywords
- base electrode
- transistor
- transiitor
- proof
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To make a high voltage-proof transiitor by coating an insulating materal on a part and the center part between a base electrode of field-plate structure and a guard electrode surrounding the base electrode.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14500475A JPS5269275A (en) | 1975-12-08 | 1975-12-08 | Transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14500475A JPS5269275A (en) | 1975-12-08 | 1975-12-08 | Transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5269275A true JPS5269275A (en) | 1977-06-08 |
Family
ID=15375214
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14500475A Pending JPS5269275A (en) | 1975-12-08 | 1975-12-08 | Transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5269275A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56112752A (en) * | 1980-02-12 | 1981-09-05 | Nec Corp | Semiconductor device |
JPS57155773A (en) * | 1981-03-20 | 1982-09-25 | Sanyo Electric Co Ltd | High pressure-resistant planar transistor |
JPS58153367A (en) * | 1982-03-05 | 1983-09-12 | Hitachi Ltd | Planar type semiconductor device |
CN107170804A (en) * | 2017-03-29 | 2017-09-15 | 西安电子科技大学 | Multiple source field plate current apertures HFET |
-
1975
- 1975-12-08 JP JP14500475A patent/JPS5269275A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56112752A (en) * | 1980-02-12 | 1981-09-05 | Nec Corp | Semiconductor device |
JPS57155773A (en) * | 1981-03-20 | 1982-09-25 | Sanyo Electric Co Ltd | High pressure-resistant planar transistor |
JPH0120549B2 (en) * | 1981-03-20 | 1989-04-17 | Sanyo Electric Co | |
JPS58153367A (en) * | 1982-03-05 | 1983-09-12 | Hitachi Ltd | Planar type semiconductor device |
JPH0142509B2 (en) * | 1982-03-05 | 1989-09-13 | Hitachi Seisakusho Kk | |
CN107170804A (en) * | 2017-03-29 | 2017-09-15 | 西安电子科技大学 | Multiple source field plate current apertures HFET |
CN107170804B (en) * | 2017-03-29 | 2020-06-16 | 西安电子科技大学 | Heterojunction field effect transistor with current aperture and current aperture of composite source field plate |
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