JPS57155773A - High pressure-resistant planar transistor - Google Patents

High pressure-resistant planar transistor

Info

Publication number
JPS57155773A
JPS57155773A JP4152581A JP4152581A JPS57155773A JP S57155773 A JPS57155773 A JP S57155773A JP 4152581 A JP4152581 A JP 4152581A JP 4152581 A JP4152581 A JP 4152581A JP S57155773 A JPS57155773 A JP S57155773A
Authority
JP
Japan
Prior art keywords
region
guard
type
planar transistor
base region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4152581A
Other languages
Japanese (ja)
Other versions
JPH0120549B2 (en
Inventor
Tadahiko Tanaka
Norihiro Shigeta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP4152581A priority Critical patent/JPS57155773A/en
Publication of JPS57155773A publication Critical patent/JPS57155773A/en
Publication of JPH0120549B2 publication Critical patent/JPH0120549B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To obtain high pressure-resistant characteristic, by providing an electrode contacting with a guard region and extended on an insulating film on the opposite side of a base region with the interval between electrodes coated with a nitride film in a planar transistor having a plurality of guard regions. CONSTITUTION:A planar transistor is constituted of an N<+> type collector contact region 20, collector region 21 formed of an N type epitaxial layer, P type base region 22, N<+> type emitter region 23 and a plurality of P type guard regions 24 surrounding the base region 22. A field electrode 30 ohmically contacting with the guard region 24 and extended on the SiO2 film 29 on the opposite side of the base region 22 is connected to the guard region. Further, the interval between the field electrodes 30 is adhered with the attachment of an Si3N4 film by plasma CVD method. Thus, the field electrode 30 promotes spreading of a depletion layer, and the attachment 32 restrains the discharge between the electrodes 30. Therefore, elements are enhanced in pressure-resistance.
JP4152581A 1981-03-20 1981-03-20 High pressure-resistant planar transistor Granted JPS57155773A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4152581A JPS57155773A (en) 1981-03-20 1981-03-20 High pressure-resistant planar transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4152581A JPS57155773A (en) 1981-03-20 1981-03-20 High pressure-resistant planar transistor

Publications (2)

Publication Number Publication Date
JPS57155773A true JPS57155773A (en) 1982-09-25
JPH0120549B2 JPH0120549B2 (en) 1989-04-17

Family

ID=12610803

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4152581A Granted JPS57155773A (en) 1981-03-20 1981-03-20 High pressure-resistant planar transistor

Country Status (1)

Country Link
JP (1) JPS57155773A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58114434A (en) * 1981-12-28 1983-07-07 Fujitsu Ltd High withstand voltage semiconductor device
JPS60153164A (en) * 1984-01-20 1985-08-12 Nec Corp Semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4968669A (en) * 1972-11-06 1974-07-03
JPS5269275A (en) * 1975-12-08 1977-06-08 Hitachi Ltd Transistor
JPS5318382A (en) * 1976-08-02 1978-02-20 Rca Corp Method of manufacturing crt screen structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4968669A (en) * 1972-11-06 1974-07-03
JPS5269275A (en) * 1975-12-08 1977-06-08 Hitachi Ltd Transistor
JPS5318382A (en) * 1976-08-02 1978-02-20 Rca Corp Method of manufacturing crt screen structure

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58114434A (en) * 1981-12-28 1983-07-07 Fujitsu Ltd High withstand voltage semiconductor device
JPH0121633B2 (en) * 1981-12-28 1989-04-21 Fujitsu Ltd
JPS60153164A (en) * 1984-01-20 1985-08-12 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
JPH0120549B2 (en) 1989-04-17

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