JPS57141959A - Electrostatic induction thyristor - Google Patents

Electrostatic induction thyristor

Info

Publication number
JPS57141959A
JPS57141959A JP2703681A JP2703681A JPS57141959A JP S57141959 A JPS57141959 A JP S57141959A JP 2703681 A JP2703681 A JP 2703681A JP 2703681 A JP2703681 A JP 2703681A JP S57141959 A JPS57141959 A JP S57141959A
Authority
JP
Japan
Prior art keywords
layer
channel
gate
diffusion
aparted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2703681A
Other languages
Japanese (ja)
Inventor
Yoshiteru Shimizu
Yoshio Terasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2703681A priority Critical patent/JPS57141959A/en
Publication of JPS57141959A publication Critical patent/JPS57141959A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1066—Gate region of field-effect devices with PN junction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material

Abstract

PURPOSE:To improve the characteristics of electrostatic induction SCR by a method wherein the structure of a gate layer is formed in such a manner that the layer is thick in the neighborhood of channel section and thin in the area aparted from the channel section. CONSTITUTION:An annode 1 and a channel gate 33 are provided by performing B diffusion on the whole surface of one of the main surfaces of an N<-> type Si substrate 20, selectively performed on the other main surface, and then a buried gate 31 which is aparted from the channel section is selectively formed by performing B diffusion. An automatic doping is prevented by superposing an N-epitaxial layer 21, subsequently a P layer 32 is formed by selectively diffusing Al, and the buried gate 31 is joined together. As the Al has a large diffusion coefficient, the extension of the buried gate layer is small. Then, an N<+> layer 4 is formed by performing P-diffusion, a cathode electrode and an ohmic contact are formed, and Al electrodes 5-7 are evaporated. Thus, a gate layer is thickly formed in the vicinity of the channel which dominates blocking and turn-off characteristics, and a gate layer is properly selected at the section which is not effected by these characteristics aparted from the channel which dominates the turn-on characteristics, thereby enabling to improve the characteristics of the electrostatic induction type SCR.
JP2703681A 1981-02-27 1981-02-27 Electrostatic induction thyristor Pending JPS57141959A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2703681A JPS57141959A (en) 1981-02-27 1981-02-27 Electrostatic induction thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2703681A JPS57141959A (en) 1981-02-27 1981-02-27 Electrostatic induction thyristor

Publications (1)

Publication Number Publication Date
JPS57141959A true JPS57141959A (en) 1982-09-02

Family

ID=12209834

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2703681A Pending JPS57141959A (en) 1981-02-27 1981-02-27 Electrostatic induction thyristor

Country Status (1)

Country Link
JP (1) JPS57141959A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5936067A (en) * 1982-08-18 1984-02-28 Kanzaki Paper Mfg Co Ltd Cutter for both selvedges of recorded continuous sheet
EP0565349A2 (en) * 1992-04-07 1993-10-13 Toyo Denki Seizo Kabushiki Kaisha MOS-controlled thyristor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5936067A (en) * 1982-08-18 1984-02-28 Kanzaki Paper Mfg Co Ltd Cutter for both selvedges of recorded continuous sheet
JPS6146383B2 (en) * 1982-08-18 1986-10-14 Kanzaki Seishi Kk
EP0565349A2 (en) * 1992-04-07 1993-10-13 Toyo Denki Seizo Kabushiki Kaisha MOS-controlled thyristor
EP0565349A3 (en) * 1992-04-07 1994-12-14 Toyo Electric Mfg Co Ltd

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