JPS57166078A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57166078A
JPS57166078A JP5155881A JP5155881A JPS57166078A JP S57166078 A JPS57166078 A JP S57166078A JP 5155881 A JP5155881 A JP 5155881A JP 5155881 A JP5155881 A JP 5155881A JP S57166078 A JPS57166078 A JP S57166078A
Authority
JP
Japan
Prior art keywords
layer
region
junction
type
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5155881A
Other languages
Japanese (ja)
Inventor
Yoshihito Amamiya
Yoshihiko Mizushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP5155881A priority Critical patent/JPS57166078A/en
Publication of JPS57166078A publication Critical patent/JPS57166078A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To avoid the characteristic deterioration of the diode by means of preventing the P-N junction surface from being stained by a method wherein, when the P-N junction type diode is manufactured, the P-N junction surface is constituted not to be exposed to the outside of the semiconductor lamination. CONSTITUTION:A P<-> type layer to be cathode region is grown on an N<+> type Si substrate 1 to be anode region and a P<+> type region 6 is formed by diffusion on the surface of said layer 2. Next the mesa etching is performed from said layer 2 to the upper end of said substrate 1 and the N<+> type region 11 is formed by diffusion covering the mesa section 5. Then the surface of said layer 2 is coated with the insulating layer 8 and a window is opened corresponding to the region 6 to mount the cathode electrode 10 while the underside of said substrate 1 is also coated with the anode electrode 9. Through these procedures, the ends of the P-N junction 4 between said substrate 1 and said layer 2 and held inside said region 11 not to be exposed to the outsides of the same while the P-N junction 12 between said layer 2 and said region 11 are held under said insulating layer 8 not to be exposed to the exposed surface of the diode.
JP5155881A 1981-04-06 1981-04-06 Semiconductor device Pending JPS57166078A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5155881A JPS57166078A (en) 1981-04-06 1981-04-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5155881A JPS57166078A (en) 1981-04-06 1981-04-06 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57166078A true JPS57166078A (en) 1982-10-13

Family

ID=12890314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5155881A Pending JPS57166078A (en) 1981-04-06 1981-04-06 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57166078A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4740477A (en) * 1985-10-04 1988-04-26 General Instrument Corporation Method for fabricating a rectifying P-N junction having improved breakdown voltage characteristics
US4980315A (en) * 1988-07-18 1990-12-25 General Instrument Corporation Method of making a passivated P-N junction in mesa semiconductor structure
US5166769A (en) * 1988-07-18 1992-11-24 General Instrument Corporation Passitvated mesa semiconductor and method for making same
JP2001185727A (en) * 1999-10-15 2001-07-06 Fuji Electric Co Ltd Semiconductor device and its manufacturing method
JP2007208075A (en) * 2006-02-02 2007-08-16 Fuji Electric Holdings Co Ltd Semiconductor device
JP2017135246A (en) * 2016-01-27 2017-08-03 ルネサスエレクトロニクス株式会社 Semiconductor device and manufacturing method of the same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4740477A (en) * 1985-10-04 1988-04-26 General Instrument Corporation Method for fabricating a rectifying P-N junction having improved breakdown voltage characteristics
US4980315A (en) * 1988-07-18 1990-12-25 General Instrument Corporation Method of making a passivated P-N junction in mesa semiconductor structure
US5166769A (en) * 1988-07-18 1992-11-24 General Instrument Corporation Passitvated mesa semiconductor and method for making same
JP2001185727A (en) * 1999-10-15 2001-07-06 Fuji Electric Co Ltd Semiconductor device and its manufacturing method
JP4696337B2 (en) * 1999-10-15 2011-06-08 富士電機システムズ株式会社 Semiconductor device
JP2007208075A (en) * 2006-02-02 2007-08-16 Fuji Electric Holdings Co Ltd Semiconductor device
JP2017135246A (en) * 2016-01-27 2017-08-03 ルネサスエレクトロニクス株式会社 Semiconductor device and manufacturing method of the same

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