JPS5511370A - Semiconductor laser system - Google Patents

Semiconductor laser system

Info

Publication number
JPS5511370A
JPS5511370A JP8440778A JP8440778A JPS5511370A JP S5511370 A JPS5511370 A JP S5511370A JP 8440778 A JP8440778 A JP 8440778A JP 8440778 A JP8440778 A JP 8440778A JP S5511370 A JPS5511370 A JP S5511370A
Authority
JP
Japan
Prior art keywords
electrode
substrate
film
groove
range
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8440778A
Other languages
Japanese (ja)
Inventor
Saburo Takamiya
Toshio Tanaka
Hisao Kumabe
Wataru Suzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8440778A priority Critical patent/JPS5511370A/en
Publication of JPS5511370A publication Critical patent/JPS5511370A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: For improving heat diffusion efficiency, to provide a first electrode over both the surface of the seonc conductive range formed on one side face of a substrate and the reverse surface of a semi-insulating substrate, to form a second electrode on the insulating layer provided on the surface of said conductive range and to stick said second electrode on a heat sink.
CONSTITUTION: N-type layers 2∼5 are formed one upon another on a semi-insulating substrate 1, only said layer 5 is selectively removed, and the remainder portion of said layer 5 is covered with Si3N4 film 11. Next, etching is made with said film 11 used as mask, a groove 12 is formed into said substrate 12, a P+-type range 7 is formed by diffusing Zn on the inside of the walls of said groove 12, and heat- treated to form a P-type range 8. Thereafter, said film 11 is selectively removed, a second metallic electrode 9 and a first metallic electrode 10a are fitted on the remainder portion of said film 11 and the inside of the walls of said groove 12, and the portion on an element separation range of said electrode 9 is removed. Next, an opening is made at the bottom of said groove 12 by cutting the reverse side of said substrate 1, an electrode 10 for connecting to an electrode 10a is fitted on the new reverse surface of said substrate 1, and a heat sink is fitted on second electrode 9 side.
COPYRIGHT: (C)1980,JPO&Japio
JP8440778A 1978-07-10 1978-07-10 Semiconductor laser system Pending JPS5511370A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8440778A JPS5511370A (en) 1978-07-10 1978-07-10 Semiconductor laser system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8440778A JPS5511370A (en) 1978-07-10 1978-07-10 Semiconductor laser system

Publications (1)

Publication Number Publication Date
JPS5511370A true JPS5511370A (en) 1980-01-26

Family

ID=13829727

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8440778A Pending JPS5511370A (en) 1978-07-10 1978-07-10 Semiconductor laser system

Country Status (1)

Country Link
JP (1) JPS5511370A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58225682A (en) * 1982-06-22 1983-12-27 Mitsubishi Electric Corp Semiconductor laser device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58225682A (en) * 1982-06-22 1983-12-27 Mitsubishi Electric Corp Semiconductor laser device

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