JPS5565483A - Manufacture of semiconductor light emitting element - Google Patents

Manufacture of semiconductor light emitting element

Info

Publication number
JPS5565483A
JPS5565483A JP13954878A JP13954878A JPS5565483A JP S5565483 A JPS5565483 A JP S5565483A JP 13954878 A JP13954878 A JP 13954878A JP 13954878 A JP13954878 A JP 13954878A JP S5565483 A JPS5565483 A JP S5565483A
Authority
JP
Japan
Prior art keywords
layer
light emitting
selective etching
manufacture
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13954878A
Other languages
Japanese (ja)
Other versions
JPS6244715B2 (en
Inventor
Isamu Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13954878A priority Critical patent/JPS5565483A/en
Publication of JPS5565483A publication Critical patent/JPS5565483A/en
Publication of JPS6244715B2 publication Critical patent/JPS6244715B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a buried LED operative at high speed in yield by forming a domic light emitting face for which a part of the back of Al0.3Ga0.7As layer is exposed through selective etching from behind a substrate.
CONSTITUTION: There are formed on the surface of a semiconductor substrate 10 n-type Al0.3Ga0.7As layers 11 and 13 and a multilayer epitaxial layer consisting of an n-type GaAs layer 12 between them, a hole deep enough to reach the layer 12 from the layer 13 side is perforated through selective etching, and the layer 12 exposed to a portion of the hole is melted back as deep as reaching the layer 11. Next, a domic light emitting face 17 for which a part of the back of the layer 11 is formed through selective etching from behind the substrate 10, and p-type electrode 20 and an n-type electrode 18 are mounted thereon. A buried LED operative at high speed is thus obtainable in yield.
COPYRIGHT: (C)1980,JPO&Japio
JP13954878A 1978-11-13 1978-11-13 Manufacture of semiconductor light emitting element Granted JPS5565483A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13954878A JPS5565483A (en) 1978-11-13 1978-11-13 Manufacture of semiconductor light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13954878A JPS5565483A (en) 1978-11-13 1978-11-13 Manufacture of semiconductor light emitting element

Publications (2)

Publication Number Publication Date
JPS5565483A true JPS5565483A (en) 1980-05-16
JPS6244715B2 JPS6244715B2 (en) 1987-09-22

Family

ID=15247818

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13954878A Granted JPS5565483A (en) 1978-11-13 1978-11-13 Manufacture of semiconductor light emitting element

Country Status (1)

Country Link
JP (1) JPS5565483A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6866555B2 (en) * 2000-07-31 2005-03-15 Semiconductor Energy Laboratory Co., Ltd. Display element and method of manufacturing the same
US9130141B2 (en) 2012-09-14 2015-09-08 Panasonic Intellectual Property Management Co., Ltd. Light-emitting diode element and light-emitting diode device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5113588A (en) * 1974-07-24 1976-02-03 Hitachi Ltd
JPS5150688A (en) * 1974-10-30 1976-05-04 Nippon Telegraph & Telephone
JPS5314807A (en) * 1976-07-26 1978-02-09 Arakawa Rinsan Kagaku Kogyo Paper sizing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5113588A (en) * 1974-07-24 1976-02-03 Hitachi Ltd
JPS5150688A (en) * 1974-10-30 1976-05-04 Nippon Telegraph & Telephone
JPS5314807A (en) * 1976-07-26 1978-02-09 Arakawa Rinsan Kagaku Kogyo Paper sizing method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6866555B2 (en) * 2000-07-31 2005-03-15 Semiconductor Energy Laboratory Co., Ltd. Display element and method of manufacturing the same
US7414364B2 (en) 2000-07-31 2008-08-19 Semiconductor Energy Laboratory Co., Ltd. Display element and method of manufacturing the same
US7768193B2 (en) 2000-07-31 2010-08-03 Semiconductor Energy Laboratory Co., Ltd. Display device incorporating an electrode protection layer exposing the electrode element to an atmosphere
US9130141B2 (en) 2012-09-14 2015-09-08 Panasonic Intellectual Property Management Co., Ltd. Light-emitting diode element and light-emitting diode device

Also Published As

Publication number Publication date
JPS6244715B2 (en) 1987-09-22

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