JPS5548991A - Semiconductor joining laser forming method - Google Patents
Semiconductor joining laser forming methodInfo
- Publication number
- JPS5548991A JPS5548991A JP11679378A JP11679378A JPS5548991A JP S5548991 A JPS5548991 A JP S5548991A JP 11679378 A JP11679378 A JP 11679378A JP 11679378 A JP11679378 A JP 11679378A JP S5548991 A JPS5548991 A JP S5548991A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- growth
- width
- epi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE: To obtain a high-efficiency laser device, by allowing a small-reflectivity layer to grow on an activation layer by the first phase epitaxial growth, allowing growth only inside of a narrow-width groove, which is kept apart by prescribed width and in parallel, by the second phase epitaxial growth and embedding side surfaces.
CONSTITUTION: An n-type Al0.3Ga0.7As 7, a GaAs activation layer 8 and a p-type Al0.3Ga0.7As 9 are epi-formed on an n-type GaAs 6, and by etching the layer 7 through 9, grooves of approximately 20μm in width are provided on both sides of a belt-like layer of approximately 5mm in width. After washing crystllized surface, a p-type Al0.3Ga0.7As 10 and an n-type Al0.3Ga0.7As 11 are epi-formed. By using a constant growth speed and a constant cooling speed, the crystallized surface is flatly formed. Since there is no more epi-formation on AlGaAs having been once aerated, surface of the layer 9 is free from growth layer. Electrodes 13 and 14 are formed, and when the electrode 14 is driven as positive, the layers 11 and 10 are conversely biased and the most part of the current needed for radiation of the activation layer is caught by a layer 15, and therefore, a laser of high conversion efficiency can be obtained.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11679378A JPS5548991A (en) | 1978-09-21 | 1978-09-21 | Semiconductor joining laser forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11679378A JPS5548991A (en) | 1978-09-21 | 1978-09-21 | Semiconductor joining laser forming method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5548991A true JPS5548991A (en) | 1980-04-08 |
| JPS613117B2 JPS613117B2 (en) | 1986-01-30 |
Family
ID=14695817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11679378A Granted JPS5548991A (en) | 1978-09-21 | 1978-09-21 | Semiconductor joining laser forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5548991A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57206082A (en) * | 1981-06-12 | 1982-12-17 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser |
| JPS5866664U (en) * | 1981-10-29 | 1983-05-06 | 日本電気株式会社 | Buried structure semiconductor laser device |
| JPS5882589A (en) * | 1981-11-12 | 1983-05-18 | Nec Corp | Semiconductor laser |
| JPS5884484A (en) * | 1981-11-12 | 1983-05-20 | Nec Corp | Semiconductor laser-photodiode beam integrating element |
| JPS5885584A (en) * | 1981-11-16 | 1983-05-21 | Nec Corp | Semiconductor laser |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111323955B (en) * | 2020-04-07 | 2022-07-22 | 京东方科技集团股份有限公司 | Display panel, cutting method thereof and display device |
-
1978
- 1978-09-21 JP JP11679378A patent/JPS5548991A/en active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57206082A (en) * | 1981-06-12 | 1982-12-17 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser |
| JPS5866664U (en) * | 1981-10-29 | 1983-05-06 | 日本電気株式会社 | Buried structure semiconductor laser device |
| JPS5882589A (en) * | 1981-11-12 | 1983-05-18 | Nec Corp | Semiconductor laser |
| JPS5884484A (en) * | 1981-11-12 | 1983-05-20 | Nec Corp | Semiconductor laser-photodiode beam integrating element |
| JPS6358391B2 (en) * | 1981-11-12 | 1988-11-15 | Nippon Electric Co | |
| JPS5885584A (en) * | 1981-11-16 | 1983-05-21 | Nec Corp | Semiconductor laser |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS613117B2 (en) | 1986-01-30 |
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