JPS5574195A - Manufacturing semiconductor laser - Google Patents
Manufacturing semiconductor laserInfo
- Publication number
- JPS5574195A JPS5574195A JP14685778A JP14685778A JPS5574195A JP S5574195 A JPS5574195 A JP S5574195A JP 14685778 A JP14685778 A JP 14685778A JP 14685778 A JP14685778 A JP 14685778A JP S5574195 A JPS5574195 A JP S5574195A
- Authority
- JP
- Japan
- Prior art keywords
- type
- diffused
- layer
- density
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE: To readily control the carrier density in an active layer region by growing multiple layers on a Zn-diffused semiconductor substrate, drive-in-diffusing Zn which has been diffused in the sybstrate in a thermal treatment process, and controlling a p-type density of the active layer.
CONSTITUTION: Zn10 is diffused in a stripe shape with a specified width at an approximately central portion on a p-type GaAs semiconductor substrate 9. Then, on the substrate 9, an n-type GaAs layer 11, a p-type Al0.3Ga0.7As layer 12, an n- type active layer 13, and an n-type Al0.3Ga0.7As layer 14 are epitaxially grown sequentially in liquid phase. Thereafter, Zn10, which has been diffused into the substrate 9 in the thermal-treatment process, is drive-in-diffused again so that the front reaches the layer 14. As a result, a portion of the layers 11 and 13 are converted into p-type and a p-type region 15 is formed. In this case, the control of the density and the depth of Zn depends on the density and thickness of a Zn layer 10 which is diffused into the substrate 9, and the desired p-type carrier density for the active layer can be readily obtained.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14685778A JPS5574195A (en) | 1978-11-28 | 1978-11-28 | Manufacturing semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14685778A JPS5574195A (en) | 1978-11-28 | 1978-11-28 | Manufacturing semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5574195A true JPS5574195A (en) | 1980-06-04 |
| JPS6118879B2 JPS6118879B2 (en) | 1986-05-14 |
Family
ID=15417119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14685778A Granted JPS5574195A (en) | 1978-11-28 | 1978-11-28 | Manufacturing semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5574195A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4888782A (en) * | 1987-07-16 | 1989-12-19 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor light emitting device |
| US4957879A (en) * | 1988-02-02 | 1990-09-18 | Mitsubishi Denki Kabushiki Kaisha | Method of making a semiconductor laser using superlattice disordering |
-
1978
- 1978-11-28 JP JP14685778A patent/JPS5574195A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4888782A (en) * | 1987-07-16 | 1989-12-19 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor light emitting device |
| US4960730A (en) * | 1987-07-16 | 1990-10-02 | Mitsubishi Denki Kabushiki Kaisha | Method of making a semiconductor light emitting device using out-diffusion from a buried stripe |
| US4957879A (en) * | 1988-02-02 | 1990-09-18 | Mitsubishi Denki Kabushiki Kaisha | Method of making a semiconductor laser using superlattice disordering |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6118879B2 (en) | 1986-05-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS54154984A (en) | Semiconductor laser device and its manufacture | |
| JPS54152878A (en) | Structure of semiconductor laser element and its manufacture | |
| JPS549592A (en) | Luminous semiconductor element | |
| JPS55141769A (en) | Electric field light emitting element | |
| JPS5574195A (en) | Manufacturing semiconductor laser | |
| JPS5493378A (en) | Manufacture for semiconductor device | |
| JPS5434756A (en) | Vapor-phase growth method for semiconductor | |
| JPS5312289A (en) | Production of semiconductor device | |
| JPS5586182A (en) | Manufacture of semiconductor device | |
| JPS561528A (en) | Manufacture of epitaxial wafer of 3-5 group compound semiconductor | |
| JPS5676588A (en) | Manufacture of semiconductor laser | |
| JPS5534482A (en) | Manufacturing method for semiconductor laser | |
| JPS55124280A (en) | Method of fabricating light emitting diode | |
| JPS5629382A (en) | Light emitting device of double hetero structure and manufacture thereof | |
| JPS6421990A (en) | Manufacture of semiconductor light-emitting device | |
| JPS5574193A (en) | Manufacturing semiconductor laser | |
| JPS56129336A (en) | Method of forming insulative portion in chemical compound semiconductor | |
| JPS6482615A (en) | Manufacture of semiconductor element | |
| JPS54107276A (en) | Production of semiconductor device | |
| JPS55165689A (en) | Preparation of light emission semiconductor device | |
| JPS5621386A (en) | Manufacture of luminous element | |
| JPS5731184A (en) | Semiconductor light-emitting element and manufacture thereof | |
| JPS5574194A (en) | Manufacturing semiconductor laser | |
| JPS5654086A (en) | Manufacture of semiconductor laser apparatus | |
| JPS6473690A (en) | Manufacture of semiconductor laser |