JPS5731184A - Semiconductor light-emitting element and manufacture thereof - Google Patents

Semiconductor light-emitting element and manufacture thereof

Info

Publication number
JPS5731184A
JPS5731184A JP10603780A JP10603780A JPS5731184A JP S5731184 A JPS5731184 A JP S5731184A JP 10603780 A JP10603780 A JP 10603780A JP 10603780 A JP10603780 A JP 10603780A JP S5731184 A JPS5731184 A JP S5731184A
Authority
JP
Japan
Prior art keywords
layer
type
density
low
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10603780A
Other languages
Japanese (ja)
Inventor
Tetsuo Sekiwa
Fumiaki Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10603780A priority Critical patent/JPS5731184A/en
Publication of JPS5731184A publication Critical patent/JPS5731184A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system

Abstract

PURPOSE:To make it possible to set the doner density of an N type layer and enable a high light-emitting efficiency to be obtained, by adding N at the beginning of growth of the N type layer. CONSTITUTION:An N type semiconductor layer 12, which includes N and has a low donor density, is formed on an N type GaP single crystal substrate 11. An N type semiconductor layer 13, which includes no N, is accmulated on the layer 12 continuously. A P layer 14 is formed on the layer 13 continuously. An element thus formed can set the donor density of the layer 12 low by adding N at the beginning of growth of the N type layer. Therefore, as the donor density of a layer 13 to be grown subsequently is kept low, the impurity density difference between the parts near a P-N junction can be made extremely large. As a result, said element has a large amount of carrier injection at light-emitting operation and can obtain a high light-emitting efficiency.
JP10603780A 1980-08-01 1980-08-01 Semiconductor light-emitting element and manufacture thereof Pending JPS5731184A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10603780A JPS5731184A (en) 1980-08-01 1980-08-01 Semiconductor light-emitting element and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10603780A JPS5731184A (en) 1980-08-01 1980-08-01 Semiconductor light-emitting element and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5731184A true JPS5731184A (en) 1982-02-19

Family

ID=14423435

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10603780A Pending JPS5731184A (en) 1980-08-01 1980-08-01 Semiconductor light-emitting element and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5731184A (en)

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