JPS57199272A - Photogenerating elements - Google Patents

Photogenerating elements

Info

Publication number
JPS57199272A
JPS57199272A JP56085244A JP8524481A JPS57199272A JP S57199272 A JPS57199272 A JP S57199272A JP 56085244 A JP56085244 A JP 56085244A JP 8524481 A JP8524481 A JP 8524481A JP S57199272 A JPS57199272 A JP S57199272A
Authority
JP
Japan
Prior art keywords
layer
semiconductor layer
photogenerating
type semiconductor
band width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56085244A
Other languages
Japanese (ja)
Other versions
JPH0235472B2 (en
Inventor
Yoshinori Yukimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56085244A priority Critical patent/JPS57199272A/en
Publication of JPS57199272A publication Critical patent/JPS57199272A/en
Publication of JPH0235472B2 publication Critical patent/JPH0235472B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/076—Multiple junction or tandem solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To minimize the loss due to the restrictions on the structural design by a method wherein the variable multiple junction structure provided with the two kinds of forbidden band width (or optical transition interval) of the first and second layer forming the npn structure is adopted. CONSTITUTION:The photogenerating element is comprised of nipin substrate. The band width of the i type semiconductor layer 3b formed on the p type semiconductor layer 4 is narrower than that of the true semiconductor layer 3. The n<+> semiconductive layer 2b is formed on the layer 3b. Therefore it is needless to add the photocurrent generated in the layer 1 to that generated in the layer 2. Through these procedures, the option and the allowance in the design are increased so that the optimum composition in terms of the physical constant of the layer 1 and 2 may be selected.
JP56085244A 1981-06-01 1981-06-01 Photogenerating elements Granted JPS57199272A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56085244A JPS57199272A (en) 1981-06-01 1981-06-01 Photogenerating elements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56085244A JPS57199272A (en) 1981-06-01 1981-06-01 Photogenerating elements

Publications (2)

Publication Number Publication Date
JPS57199272A true JPS57199272A (en) 1982-12-07
JPH0235472B2 JPH0235472B2 (en) 1990-08-10

Family

ID=13853144

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56085244A Granted JPS57199272A (en) 1981-06-01 1981-06-01 Photogenerating elements

Country Status (1)

Country Link
JP (1) JPS57199272A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5233450A (en) * 1990-06-21 1993-08-03 Sharp Kabushiki Kaisha Liquid crystal photoconductive layer including a back-to-back diode
US5239189A (en) * 1991-06-07 1993-08-24 Eastman Kodak Company Integrated light emitting and light detecting device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5626479A (en) * 1979-08-13 1981-03-14 Shunpei Yamazaki Optoelectro conversion device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5626479A (en) * 1979-08-13 1981-03-14 Shunpei Yamazaki Optoelectro conversion device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5233450A (en) * 1990-06-21 1993-08-03 Sharp Kabushiki Kaisha Liquid crystal photoconductive layer including a back-to-back diode
US5239189A (en) * 1991-06-07 1993-08-24 Eastman Kodak Company Integrated light emitting and light detecting device

Also Published As

Publication number Publication date
JPH0235472B2 (en) 1990-08-10

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