JPS5316593A - Semiconductor photo detector - Google Patents

Semiconductor photo detector

Info

Publication number
JPS5316593A
JPS5316593A JP9028976A JP9028976A JPS5316593A JP S5316593 A JPS5316593 A JP S5316593A JP 9028976 A JP9028976 A JP 9028976A JP 9028976 A JP9028976 A JP 9028976A JP S5316593 A JPS5316593 A JP S5316593A
Authority
JP
Japan
Prior art keywords
photo detector
layer
semiconductor photo
forming
quantum efficiency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9028976A
Other languages
Japanese (ja)
Other versions
JPS5938748B2 (en
Inventor
Hirobumi Ouchi
Masahiro Okamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP51090289A priority Critical patent/JPS5938748B2/en
Publication of JPS5316593A publication Critical patent/JPS5316593A/en
Publication of JPS5938748B2 publication Critical patent/JPS5938748B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To obtain a photo detector of a high quantum efficiency and a wide wavelength band by forming a part of a p layer or π layer or a part of the p layer and π layer with mixed crystals of Si and Ge of a forbidden band width smaller than of Si.
COPYRIGHT: (C)1978,JPO&Japio
JP51090289A 1976-07-30 1976-07-30 semiconductor photodetector Expired JPS5938748B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51090289A JPS5938748B2 (en) 1976-07-30 1976-07-30 semiconductor photodetector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51090289A JPS5938748B2 (en) 1976-07-30 1976-07-30 semiconductor photodetector

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP60086359A Division JPS60258980A (en) 1985-04-24 1985-04-24 Semiconductor photo detector
JP60086358A Division JPS60258979A (en) 1985-04-24 1985-04-24 Semiconductor photo detector

Publications (2)

Publication Number Publication Date
JPS5316593A true JPS5316593A (en) 1978-02-15
JPS5938748B2 JPS5938748B2 (en) 1984-09-19

Family

ID=13994360

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51090289A Expired JPS5938748B2 (en) 1976-07-30 1976-07-30 semiconductor photodetector

Country Status (1)

Country Link
JP (1) JPS5938748B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5416196A (en) * 1977-07-06 1979-02-06 Nec Corp Hetero junction avalanche photo diode
JPS5513907A (en) * 1978-07-17 1980-01-31 Kokusai Denshin Denwa Co Ltd <Kdd> Avalnche photo diode with semiconductor hetero construction
JPS61241985A (en) * 1985-04-19 1986-10-28 Eizo Yamaga Infrared-ray detector
WO2020203250A1 (en) * 2019-03-29 2020-10-08 パナソニックＩｐマネジメント株式会社 Photodetector
JP2021036568A (en) * 2019-08-30 2021-03-04 株式会社豊田中央研究所 Light receiving element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49122293A (en) * 1973-03-22 1974-11-22

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49122293A (en) * 1973-03-22 1974-11-22

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5416196A (en) * 1977-07-06 1979-02-06 Nec Corp Hetero junction avalanche photo diode
JPS6157716B2 (en) * 1977-07-06 1986-12-08 Nippon Electric Co
JPS5513907A (en) * 1978-07-17 1980-01-31 Kokusai Denshin Denwa Co Ltd <Kdd> Avalnche photo diode with semiconductor hetero construction
JPS61241985A (en) * 1985-04-19 1986-10-28 Eizo Yamaga Infrared-ray detector
WO2020203250A1 (en) * 2019-03-29 2020-10-08 パナソニックＩｐマネジメント株式会社 Photodetector
JPWO2020203250A1 (en) * 2019-03-29 2021-11-25 パナソニックＩｐマネジメント株式会社 Photodetector
JP2021036568A (en) * 2019-08-30 2021-03-04 株式会社豊田中央研究所 Light receiving element

Also Published As

Publication number Publication date
JPS5938748B2 (en) 1984-09-19

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