JPS5296865A - Crystal grown unit for chemical compound semiconductor - Google Patents

Crystal grown unit for chemical compound semiconductor

Info

Publication number
JPS5296865A
JPS5296865A JP1112276A JP1112276A JPS5296865A JP S5296865 A JPS5296865 A JP S5296865A JP 1112276 A JP1112276 A JP 1112276A JP 1112276 A JP1112276 A JP 1112276A JP S5296865 A JPS5296865 A JP S5296865A
Authority
JP
Japan
Prior art keywords
unit
compound semiconductor
chemical compound
crystal grown
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1112276A
Other languages
Japanese (ja)
Inventor
Seiji Yoshida
Hisatsune Watanabe
Yasuo Seki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1112276A priority Critical patent/JPS5296865A/en
Publication of JPS5296865A publication Critical patent/JPS5296865A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To make grown a plural number of chemical compound semiconductor epitaxial layers having different nature each other in the same grown unit.
COPYRIGHT: (C)1977,JPO&Japio
JP1112276A 1976-02-04 1976-02-04 Crystal grown unit for chemical compound semiconductor Pending JPS5296865A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1112276A JPS5296865A (en) 1976-02-04 1976-02-04 Crystal grown unit for chemical compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1112276A JPS5296865A (en) 1976-02-04 1976-02-04 Crystal grown unit for chemical compound semiconductor

Publications (1)

Publication Number Publication Date
JPS5296865A true JPS5296865A (en) 1977-08-15

Family

ID=11769198

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1112276A Pending JPS5296865A (en) 1976-02-04 1976-02-04 Crystal grown unit for chemical compound semiconductor

Country Status (1)

Country Link
JP (1) JPS5296865A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5699843U (en) * 1979-12-26 1981-08-06
JPS57198619A (en) * 1981-06-01 1982-12-06 Fujitsu Ltd Vapor growth of compound semiconductor
JPS57198620A (en) * 1981-06-01 1982-12-06 Fujitsu Ltd Vapor growth of compound semiconductor
JPS58147027A (en) * 1982-02-25 1983-09-01 Mitsubishi Electric Corp Preparation apparatus for semiconductor device
JPS61275194A (en) * 1985-05-29 1986-12-05 Nec Corp Vapor-phase growth method for compound semiconductor
JPS62235724A (en) * 1986-04-04 1987-10-15 Mitsubishi Electric Corp Mocvd device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3184348A (en) * 1960-12-30 1965-05-18 Ibm Method for controlling doping in vaporgrown semiconductor bodies
JPS49110273A (en) * 1973-02-20 1974-10-21
JPS50108877A (en) * 1974-01-10 1975-08-27
US3925118A (en) * 1971-04-15 1975-12-09 Philips Corp Method of depositing layers which mutually differ in composition onto a substrate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3184348A (en) * 1960-12-30 1965-05-18 Ibm Method for controlling doping in vaporgrown semiconductor bodies
US3925118A (en) * 1971-04-15 1975-12-09 Philips Corp Method of depositing layers which mutually differ in composition onto a substrate
JPS49110273A (en) * 1973-02-20 1974-10-21
JPS50108877A (en) * 1974-01-10 1975-08-27

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5699843U (en) * 1979-12-26 1981-08-06
JPS6344988Y2 (en) * 1979-12-26 1988-11-22
JPS57198619A (en) * 1981-06-01 1982-12-06 Fujitsu Ltd Vapor growth of compound semiconductor
JPS57198620A (en) * 1981-06-01 1982-12-06 Fujitsu Ltd Vapor growth of compound semiconductor
JPS58147027A (en) * 1982-02-25 1983-09-01 Mitsubishi Electric Corp Preparation apparatus for semiconductor device
JPS61275194A (en) * 1985-05-29 1986-12-05 Nec Corp Vapor-phase growth method for compound semiconductor
JPS62235724A (en) * 1986-04-04 1987-10-15 Mitsubishi Electric Corp Mocvd device
JPH0587015B2 (en) * 1986-04-04 1993-12-15 Mitsubishi Electric Corp

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