JPS57198620A - Vapor growth of compound semiconductor - Google Patents

Vapor growth of compound semiconductor

Info

Publication number
JPS57198620A
JPS57198620A JP8399181A JP8399181A JPS57198620A JP S57198620 A JPS57198620 A JP S57198620A JP 8399181 A JP8399181 A JP 8399181A JP 8399181 A JP8399181 A JP 8399181A JP S57198620 A JPS57198620 A JP S57198620A
Authority
JP
Japan
Prior art keywords
holder
substrate
compound semiconductor
growth
vapor growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8399181A
Other languages
Japanese (ja)
Inventor
Junji Komeno
Osamu Aoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8399181A priority Critical patent/JPS57198620A/en
Publication of JPS57198620A publication Critical patent/JPS57198620A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To establish growth of compound semiconductor layer of good quality by a method wherein a substrate holder is shifted to upward stream or downward stream of gas flow and switching is achieved in a short time. CONSTITUTION:The intermediate part between the region 1 and 2 is partitioned with a plate 7 and a holder 9 for a substrate 8 is provided movably. The holder 9 is directed to the downward stream side and the reactive gas flowing through the regions 1, 2 makes contact with the substrate 8 to establish the growth of LnGaAsP. Subsequently, the holder 9 is shifted to the upward stream side to contact a partition plate 7. At this time, only the reactive gas in the region 1 makes contact with the substrate 8 to grow InP. According to such a constitution, the instant gas switching can be established and therefore the vapor growth for the compound semiconductor having a hetero face of good quality can be achieved.
JP8399181A 1981-06-01 1981-06-01 Vapor growth of compound semiconductor Pending JPS57198620A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8399181A JPS57198620A (en) 1981-06-01 1981-06-01 Vapor growth of compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8399181A JPS57198620A (en) 1981-06-01 1981-06-01 Vapor growth of compound semiconductor

Publications (1)

Publication Number Publication Date
JPS57198620A true JPS57198620A (en) 1982-12-06

Family

ID=13817999

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8399181A Pending JPS57198620A (en) 1981-06-01 1981-06-01 Vapor growth of compound semiconductor

Country Status (1)

Country Link
JP (1) JPS57198620A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1988010324A1 (en) * 1987-06-24 1988-12-29 Epsilon Technology, Inc. Improved reaction chambers and methods for cvd
US6093252A (en) * 1995-08-03 2000-07-25 Asm America, Inc. Process chamber with inner support
US6383330B1 (en) 1999-09-10 2002-05-07 Asm America, Inc. Quartz wafer processing chamber
USD1028913S1 (en) 2021-06-30 2024-05-28 Asm Ip Holding B.V. Semiconductor deposition reactor ring

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5296865A (en) * 1976-02-04 1977-08-15 Nec Corp Crystal grown unit for chemical compound semiconductor
JPS5317066A (en) * 1976-07-30 1978-02-16 Nippon Telegr & Teleph Corp <Ntt> Vapor phase epitaxial growth method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5296865A (en) * 1976-02-04 1977-08-15 Nec Corp Crystal grown unit for chemical compound semiconductor
JPS5317066A (en) * 1976-07-30 1978-02-16 Nippon Telegr & Teleph Corp <Ntt> Vapor phase epitaxial growth method

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1988010324A1 (en) * 1987-06-24 1988-12-29 Epsilon Technology, Inc. Improved reaction chambers and methods for cvd
EP0368900B1 (en) * 1987-06-24 1994-09-21 Advanced Semiconductor Materials America, Inc. Improved reaction chambers and methods for cvd
US6093252A (en) * 1995-08-03 2000-07-25 Asm America, Inc. Process chamber with inner support
US6464792B1 (en) 1995-08-03 2002-10-15 Asm America, Inc. Process chamber with downstream getter plate
US6608287B2 (en) 1995-08-03 2003-08-19 Asm America, Inc. Process chamber with rectangular temperature compensation ring
US6383330B1 (en) 1999-09-10 2002-05-07 Asm America, Inc. Quartz wafer processing chamber
US6540837B2 (en) 1999-09-10 2003-04-01 Asm America, Inc. Quartz wafer processing chamber
USD1028913S1 (en) 2021-06-30 2024-05-28 Asm Ip Holding B.V. Semiconductor deposition reactor ring

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