JPS5334465A - Manufacture for semiconductor epitaxial grown layer - Google Patents
Manufacture for semiconductor epitaxial grown layerInfo
- Publication number
- JPS5334465A JPS5334465A JP10901576A JP10901576A JPS5334465A JP S5334465 A JPS5334465 A JP S5334465A JP 10901576 A JP10901576 A JP 10901576A JP 10901576 A JP10901576 A JP 10901576A JP S5334465 A JPS5334465 A JP S5334465A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- grown layer
- semiconductor epitaxial
- epitaxial grown
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To suppress the glow or eduction of the surplus impurity for the grown layer surface in the liquid, by flowing the liquid between substrates having different coarseness.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10901576A JPS5334465A (en) | 1976-09-10 | 1976-09-10 | Manufacture for semiconductor epitaxial grown layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10901576A JPS5334465A (en) | 1976-09-10 | 1976-09-10 | Manufacture for semiconductor epitaxial grown layer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5334465A true JPS5334465A (en) | 1978-03-31 |
JPS5543247B2 JPS5543247B2 (en) | 1980-11-05 |
Family
ID=14499403
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10901576A Granted JPS5334465A (en) | 1976-09-10 | 1976-09-10 | Manufacture for semiconductor epitaxial grown layer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5334465A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57100228U (en) * | 1981-10-29 | 1982-06-19 | ||
JPS59123221A (en) * | 1982-12-28 | 1984-07-17 | Matsushita Electric Ind Co Ltd | Semiconductor crystal growth method |
-
1976
- 1976-09-10 JP JP10901576A patent/JPS5334465A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57100228U (en) * | 1981-10-29 | 1982-06-19 | ||
JPS5833702Y2 (en) * | 1981-10-29 | 1983-07-28 | 日本電信電話株式会社 | Electron beam exposure equipment |
JPS59123221A (en) * | 1982-12-28 | 1984-07-17 | Matsushita Electric Ind Co Ltd | Semiconductor crystal growth method |
Also Published As
Publication number | Publication date |
---|---|
JPS5543247B2 (en) | 1980-11-05 |
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