JPS5334465A - Manufacture for semiconductor epitaxial grown layer - Google Patents

Manufacture for semiconductor epitaxial grown layer

Info

Publication number
JPS5334465A
JPS5334465A JP10901576A JP10901576A JPS5334465A JP S5334465 A JPS5334465 A JP S5334465A JP 10901576 A JP10901576 A JP 10901576A JP 10901576 A JP10901576 A JP 10901576A JP S5334465 A JPS5334465 A JP S5334465A
Authority
JP
Japan
Prior art keywords
manufacture
grown layer
semiconductor epitaxial
epitaxial grown
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10901576A
Other languages
Japanese (ja)
Other versions
JPS5543247B2 (en
Inventor
Hiroshi Hayashi
Takeshi Sakurai
Kazuhisa Murata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP10901576A priority Critical patent/JPS5334465A/en
Publication of JPS5334465A publication Critical patent/JPS5334465A/en
Publication of JPS5543247B2 publication Critical patent/JPS5543247B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To suppress the glow or eduction of the surplus impurity for the grown layer surface in the liquid, by flowing the liquid between substrates having different coarseness.
COPYRIGHT: (C)1978,JPO&Japio
JP10901576A 1976-09-10 1976-09-10 Manufacture for semiconductor epitaxial grown layer Granted JPS5334465A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10901576A JPS5334465A (en) 1976-09-10 1976-09-10 Manufacture for semiconductor epitaxial grown layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10901576A JPS5334465A (en) 1976-09-10 1976-09-10 Manufacture for semiconductor epitaxial grown layer

Publications (2)

Publication Number Publication Date
JPS5334465A true JPS5334465A (en) 1978-03-31
JPS5543247B2 JPS5543247B2 (en) 1980-11-05

Family

ID=14499403

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10901576A Granted JPS5334465A (en) 1976-09-10 1976-09-10 Manufacture for semiconductor epitaxial grown layer

Country Status (1)

Country Link
JP (1) JPS5334465A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57100228U (en) * 1981-10-29 1982-06-19
JPS59123221A (en) * 1982-12-28 1984-07-17 Matsushita Electric Ind Co Ltd Semiconductor crystal growth method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57100228U (en) * 1981-10-29 1982-06-19
JPS5833702Y2 (en) * 1981-10-29 1983-07-28 日本電信電話株式会社 Electron beam exposure equipment
JPS59123221A (en) * 1982-12-28 1984-07-17 Matsushita Electric Ind Co Ltd Semiconductor crystal growth method

Also Published As

Publication number Publication date
JPS5543247B2 (en) 1980-11-05

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