JPS52110570A - Forming method of silicon epitaxial layer - Google Patents

Forming method of silicon epitaxial layer

Info

Publication number
JPS52110570A
JPS52110570A JP2713376A JP2713376A JPS52110570A JP S52110570 A JPS52110570 A JP S52110570A JP 2713376 A JP2713376 A JP 2713376A JP 2713376 A JP2713376 A JP 2713376A JP S52110570 A JPS52110570 A JP S52110570A
Authority
JP
Japan
Prior art keywords
epitaxial layer
forming method
silicon epitaxial
forming
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2713376A
Other languages
Japanese (ja)
Inventor
Michio Suzuki
Masahiko Kogirima
Hiroji Saida
Masao Kawamura
Koji Honma
Michiyoshi Maki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2713376A priority Critical patent/JPS52110570A/en
Publication of JPS52110570A publication Critical patent/JPS52110570A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: In forming epitaxial layer, by forming at low pressure only during the initial stage of forming and since then at the pressure about the normal pressure, the junction layer having sharp density slope with small amount of autodope.
COPYRIGHT: (C)1977,JPO&Japio
JP2713376A 1976-03-15 1976-03-15 Forming method of silicon epitaxial layer Pending JPS52110570A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2713376A JPS52110570A (en) 1976-03-15 1976-03-15 Forming method of silicon epitaxial layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2713376A JPS52110570A (en) 1976-03-15 1976-03-15 Forming method of silicon epitaxial layer

Publications (1)

Publication Number Publication Date
JPS52110570A true JPS52110570A (en) 1977-09-16

Family

ID=12212544

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2713376A Pending JPS52110570A (en) 1976-03-15 1976-03-15 Forming method of silicon epitaxial layer

Country Status (1)

Country Link
JP (1) JPS52110570A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57192017A (en) * 1981-05-21 1982-11-26 Fujitsu Ltd Epitaxial growing method
JPS63119223A (en) * 1986-11-07 1988-05-23 Toshiba Mach Co Ltd Vapor growth method
JP2009302230A (en) * 2008-06-12 2009-12-24 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Manufacturing method of epitaxial wafer
JP2010003735A (en) * 2008-06-18 2010-01-07 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Epitaxial wafer and method of manufacturing the same
JP2013080965A (en) * 2013-01-22 2013-05-02 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Fabrication process of epitaxial wafer and epitaxial wafer

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57192017A (en) * 1981-05-21 1982-11-26 Fujitsu Ltd Epitaxial growing method
JPS63119223A (en) * 1986-11-07 1988-05-23 Toshiba Mach Co Ltd Vapor growth method
JP2009302230A (en) * 2008-06-12 2009-12-24 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Manufacturing method of epitaxial wafer
JP2010003735A (en) * 2008-06-18 2010-01-07 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Epitaxial wafer and method of manufacturing the same
JP2013080965A (en) * 2013-01-22 2013-05-02 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Fabrication process of epitaxial wafer and epitaxial wafer

Similar Documents

Publication Publication Date Title
JPS5298804A (en) Turbine operation
JPS5334854A (en) Self-emulsifiable silicone composition
JPS52110570A (en) Forming method of silicon epitaxial layer
JPS5434756A (en) Vapor-phase growth method for semiconductor
JPS52104831A (en) Offering multiplex device with preferential level
JPS53104162A (en) Forming method for epitaxial layer on semiconductor wafer
JPS52143761A (en) Crystal growth method
JPS52131462A (en) Manufacture of semiconductor device
JPS5290281A (en) Semiconductor laser device
JPS5289083A (en) Production of semiconductor photoelectric converting element
JPS5287359A (en) Production of semiconductor device
JPS5428566A (en) Manufacture of semiconductor device
JPS5314585A (en) Semiconductor device
JPS5368070A (en) Etching method
JPS5334465A (en) Manufacture for semiconductor epitaxial grown layer
JPS5298473A (en) Thin film material
JPS52143515A (en) Tube dividing device
JPS5373990A (en) Semiconductor device
JPS5366163A (en) Selective growth method of semiconductor buried layer
JPS53140976A (en) Semiconductor device
JPS5371559A (en) Manufacture of pn junction
JPS5327368A (en) Selective etching method
JPS5376A (en) Manufacture of semiconductor device
JPS52120763A (en) Silicon epitaxial growth method
JPS52156583A (en) Electrode formation method in semiconductor device