JPS52131462A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS52131462A JPS52131462A JP4888176A JP4888176A JPS52131462A JP S52131462 A JPS52131462 A JP S52131462A JP 4888176 A JP4888176 A JP 4888176A JP 4888176 A JP4888176 A JP 4888176A JP S52131462 A JPS52131462 A JP S52131462A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- oxidation
- substrate
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To reduce the complication involved in the oxidation film removal process by preventing oxidation of the substrate by covering its rear surface with Si3N4 film when giving selective oxidation on the surface of the substrate.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4888176A JPS52131462A (en) | 1976-04-28 | 1976-04-28 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4888176A JPS52131462A (en) | 1976-04-28 | 1976-04-28 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52131462A true JPS52131462A (en) | 1977-11-04 |
Family
ID=12815615
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4888176A Pending JPS52131462A (en) | 1976-04-28 | 1976-04-28 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52131462A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5724547A (en) * | 1980-07-22 | 1982-02-09 | Toshiba Corp | Manufacture of semiconductor element |
JPS58114441A (en) * | 1981-12-26 | 1983-07-07 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS5980972A (en) * | 1983-08-24 | 1984-05-10 | Hitachi Ltd | Manufacture of insulated gate type field-effect transistor |
-
1976
- 1976-04-28 JP JP4888176A patent/JPS52131462A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5724547A (en) * | 1980-07-22 | 1982-02-09 | Toshiba Corp | Manufacture of semiconductor element |
JPS58114441A (en) * | 1981-12-26 | 1983-07-07 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH0347741B2 (en) * | 1981-12-26 | 1991-07-22 | Fujitsu Ltd | |
JPS5980972A (en) * | 1983-08-24 | 1984-05-10 | Hitachi Ltd | Manufacture of insulated gate type field-effect transistor |
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