JPS5724547A - Manufacture of semiconductor element - Google Patents

Manufacture of semiconductor element

Info

Publication number
JPS5724547A
JPS5724547A JP9936980A JP9936980A JPS5724547A JP S5724547 A JPS5724547 A JP S5724547A JP 9936980 A JP9936980 A JP 9936980A JP 9936980 A JP9936980 A JP 9936980A JP S5724547 A JPS5724547 A JP S5724547A
Authority
JP
Japan
Prior art keywords
layer
silicon nitride
substrate
nitride layers
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9936980A
Other languages
Japanese (ja)
Inventor
Kiyoshi Hisatomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9936980A priority Critical patent/JPS5724547A/en
Publication of JPS5724547A publication Critical patent/JPS5724547A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H01L21/76216Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To prevent the substrate surface from warping and to improve the accuracy of etching by covering both the device forming surface and the opposite side with a silicon nitride layer simultaneously and removing said layer after forming a field oxide film. CONSTITUTION:After forming silicon nitride layers 12a on both sides of an N type silicon substrate 1, with only the layer 12a on the main surface left, the layer on the opposite said is removed. Then silicon nitride layers 13a, 13b are formed on both sides, and the main surface is covered with a photoresist layer 14 which is to be come a mask of prescribed pattern. A silicon nitride layer 13a' with prescribed pattern is formed by plasma-etching, and then ion inplantation is carried out to form an impurity diffused layer for channel-cut. The photoresist layer 14 is removed, and a field oxide layer 15 is formed. Then, the silicon nitride layers are removed. By this procedure, no warping of the substrate and accurate processing will result.
JP9936980A 1980-07-22 1980-07-22 Manufacture of semiconductor element Pending JPS5724547A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9936980A JPS5724547A (en) 1980-07-22 1980-07-22 Manufacture of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9936980A JPS5724547A (en) 1980-07-22 1980-07-22 Manufacture of semiconductor element

Publications (1)

Publication Number Publication Date
JPS5724547A true JPS5724547A (en) 1982-02-09

Family

ID=14245624

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9936980A Pending JPS5724547A (en) 1980-07-22 1980-07-22 Manufacture of semiconductor element

Country Status (1)

Country Link
JP (1) JPS5724547A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59107525A (en) * 1982-12-13 1984-06-21 Nec Corp Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52131462A (en) * 1976-04-28 1977-11-04 Mitsubishi Electric Corp Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52131462A (en) * 1976-04-28 1977-11-04 Mitsubishi Electric Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59107525A (en) * 1982-12-13 1984-06-21 Nec Corp Semiconductor device

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