JPS55133538A - Manufacturing method of semiconductor device - Google Patents
Manufacturing method of semiconductor deviceInfo
- Publication number
- JPS55133538A JPS55133538A JP4140579A JP4140579A JPS55133538A JP S55133538 A JPS55133538 A JP S55133538A JP 4140579 A JP4140579 A JP 4140579A JP 4140579 A JP4140579 A JP 4140579A JP S55133538 A JPS55133538 A JP S55133538A
- Authority
- JP
- Japan
- Prior art keywords
- film
- photo resist
- pattern
- polyimide
- silicon oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 6
- 229920001721 polyimide Polymers 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 3
- 239000009719 polyimide resin Substances 0.000 abstract 2
- 238000005245 sintering Methods 0.000 abstract 2
- 230000007850 degeneration Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Local Oxidation Of Silicon (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To perform a pattern processing of polyimide film using a photo resist film as a mask by degeneration reaction of the polyimide film with the solution of silicon oxide application film between a polyimide film and a photo resist film. CONSTITUTION:After a polyimide resin film 7 of 1-5mum is provided on the surface of a semiconductor deivce by sintering at 100-300 deg.C, a silicon oxide application film 8 of 0.05-0.3mum is formed by sintering at 100-300 deg.C. Then a photo resist film pattern 9 of 0.5-2mum is formed using an ordinary photo resist technique, and the silicon oxide application film 8 on the area where it has not been masked by the above-mentioned pattern is removed. Next, the polyimide resin film 7 is removed by performing a plasma etching with the photo resist film pattern 9 used as a mask, and the photo resist pattern 9 is also removed by extending the processing time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4140579A JPS55133538A (en) | 1979-04-05 | 1979-04-05 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4140579A JPS55133538A (en) | 1979-04-05 | 1979-04-05 | Manufacturing method of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55133538A true JPS55133538A (en) | 1980-10-17 |
Family
ID=12607445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4140579A Pending JPS55133538A (en) | 1979-04-05 | 1979-04-05 | Manufacturing method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55133538A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57111030A (en) * | 1980-12-27 | 1982-07-10 | Fujitsu Ltd | Passivation film |
| JPS5889825A (en) * | 1981-11-24 | 1983-05-28 | Shindengen Electric Mfg Co Ltd | Manufacture of semiconductor device |
| JPS58110044A (en) * | 1981-12-23 | 1983-06-30 | Nec Corp | Pattern formation |
| JPS59175761A (en) * | 1983-03-26 | 1984-10-04 | Mitsubishi Electric Corp | Manufacture of solid-state image pickup element with color filter |
| JPH0324691A (en) * | 1989-06-21 | 1991-02-01 | Sanyo Electric Co Ltd | Drink feeder |
-
1979
- 1979-04-05 JP JP4140579A patent/JPS55133538A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57111030A (en) * | 1980-12-27 | 1982-07-10 | Fujitsu Ltd | Passivation film |
| JPS5889825A (en) * | 1981-11-24 | 1983-05-28 | Shindengen Electric Mfg Co Ltd | Manufacture of semiconductor device |
| JPS58110044A (en) * | 1981-12-23 | 1983-06-30 | Nec Corp | Pattern formation |
| JPS59175761A (en) * | 1983-03-26 | 1984-10-04 | Mitsubishi Electric Corp | Manufacture of solid-state image pickup element with color filter |
| JPH0324691A (en) * | 1989-06-21 | 1991-02-01 | Sanyo Electric Co Ltd | Drink feeder |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5656636A (en) | Processing method of fine pattern | |
| JPS55133538A (en) | Manufacturing method of semiconductor device | |
| JPS57130431A (en) | Manufacture of semiconductor device | |
| JPS5633827A (en) | Photo etching method including surface treatment of substrate | |
| JPS5339060A (en) | Lot number marking method to wafers | |
| JPS5596681A (en) | Method of fabricating semiconductor device | |
| JPS5689742A (en) | Mask for exposure | |
| JPS5633841A (en) | Manufacture of semiconductor device | |
| JPS51118392A (en) | Manuforcturing process for semiconductor unit | |
| JPS57148371A (en) | Manufacture of mesa type semiconductor device | |
| JPS5496363A (en) | Electrode forming method for semiconductor device | |
| JPS543473A (en) | Manufacture of semiconductor device | |
| JPS57120672A (en) | Plasma etching method | |
| JPS55138841A (en) | Method of forming pattern on semiconductor element | |
| JPS55128830A (en) | Method of working photoresist film | |
| JPS6420624A (en) | Manufacture of semiconductor device | |
| JPS55130130A (en) | Manufacture of semiconductor device | |
| JPS5412268A (en) | Production of semiconductor device | |
| JPS5693331A (en) | Manufacture of semiconductor device | |
| JPS5340282A (en) | Manufacture of semiconductor unit | |
| JPS5211867A (en) | Manufacturing method of a semiconductor device | |
| JPS5797629A (en) | Manufacture of semiconductor device | |
| JPS543470A (en) | Etching method | |
| JPS55124230A (en) | Forming method of pattern | |
| JPS53112673A (en) | Mask alignment method in semiconductor device manufacturing process and photo mask used for its execution |