JPS6420624A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6420624A
JPS6420624A JP17631887A JP17631887A JPS6420624A JP S6420624 A JPS6420624 A JP S6420624A JP 17631887 A JP17631887 A JP 17631887A JP 17631887 A JP17631887 A JP 17631887A JP S6420624 A JPS6420624 A JP S6420624A
Authority
JP
Japan
Prior art keywords
pattern
state
film
manufacture
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17631887A
Other languages
Japanese (ja)
Inventor
Mitsuhide Maeda
Yasunori Miyamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP17631887A priority Critical patent/JPS6420624A/en
Publication of JPS6420624A publication Critical patent/JPS6420624A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To accurately form a pattern and to improve the state of the pattern by removing an unnecessary resist residue by oxygen plasma, and then vapor etching to form the pattern. CONSTITUTION:When it is exposed with an oxygen plasma 3, a resist residue 2b on an SiN film 1c laminated together with an SiO2 film 1b on a wafer 1b formed by etching is removed, but since a resist pattern 2a is thick, it is not completely removed but remains. When it is treated by vapor etching 3 in this state, a pattern is formed accurately on the film 1c in good state.
JP17631887A 1987-07-15 1987-07-15 Manufacture of semiconductor device Pending JPS6420624A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17631887A JPS6420624A (en) 1987-07-15 1987-07-15 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17631887A JPS6420624A (en) 1987-07-15 1987-07-15 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6420624A true JPS6420624A (en) 1989-01-24

Family

ID=16011488

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17631887A Pending JPS6420624A (en) 1987-07-15 1987-07-15 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6420624A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS576684A (en) * 1980-06-13 1982-01-13 Toyo Boseki Polyester fiber for wadding
WO2002025728A3 (en) * 2000-09-21 2002-06-06 Infineon Technologies Corp Dual thickness gate oxide fabrication method using plasma surface treatment

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS576684A (en) * 1980-06-13 1982-01-13 Toyo Boseki Polyester fiber for wadding
WO2002025728A3 (en) * 2000-09-21 2002-06-06 Infineon Technologies Corp Dual thickness gate oxide fabrication method using plasma surface treatment

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