JPS5642346A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5642346A
JPS5642346A JP11845679A JP11845679A JPS5642346A JP S5642346 A JPS5642346 A JP S5642346A JP 11845679 A JP11845679 A JP 11845679A JP 11845679 A JP11845679 A JP 11845679A JP S5642346 A JPS5642346 A JP S5642346A
Authority
JP
Japan
Prior art keywords
film
etched
semiconductor device
sio2
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11845679A
Other languages
Japanese (ja)
Inventor
Haruhide Fuse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP11845679A priority Critical patent/JPS5642346A/en
Publication of JPS5642346A publication Critical patent/JPS5642346A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Abstract

PURPOSE:To obtain a microminiature pattern in the semiconductor device by introducing large quantity of B atoms into an SiO2 and then etching it. CONSTITUTION:A resist mask 4 is covered on the SiO2 film 2 on an Si substrate 1, and B, BF2, BCl2 or the like 5 are injected therto in a high density. When the mask 4 is removed and the film is plasma etched or etched with a solution containing an HF, the film 2 containing no B is selectively removed, but the layer 6 containing large amount of B is not etched at all. Accordingly, no side etching occurs, and the microminiature pattern can consequently be obtained.
JP11845679A 1979-09-14 1979-09-14 Manufacture of semiconductor device Pending JPS5642346A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11845679A JPS5642346A (en) 1979-09-14 1979-09-14 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11845679A JPS5642346A (en) 1979-09-14 1979-09-14 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5642346A true JPS5642346A (en) 1981-04-20

Family

ID=14737086

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11845679A Pending JPS5642346A (en) 1979-09-14 1979-09-14 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5642346A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59119872A (en) * 1982-12-27 1984-07-11 Fujikura Ltd Forming method of diaphragm of semiconductor pressure sensor
US5286340A (en) * 1991-09-13 1994-02-15 University Of Pittsburgh Of The Commonwealth System Of Higher Education Process for controlling silicon etching by atomic hydrogen
JP2007111831A (en) * 2005-10-21 2007-05-10 Seiko Epson Corp Method for manufacturing mems element, and mems element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59119872A (en) * 1982-12-27 1984-07-11 Fujikura Ltd Forming method of diaphragm of semiconductor pressure sensor
JPH0368544B2 (en) * 1982-12-27 1991-10-28 Fujikura Ltd
US5286340A (en) * 1991-09-13 1994-02-15 University Of Pittsburgh Of The Commonwealth System Of Higher Education Process for controlling silicon etching by atomic hydrogen
JP2007111831A (en) * 2005-10-21 2007-05-10 Seiko Epson Corp Method for manufacturing mems element, and mems element

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