JPS6439029A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6439029A
JPS6439029A JP19551287A JP19551287A JPS6439029A JP S6439029 A JPS6439029 A JP S6439029A JP 19551287 A JP19551287 A JP 19551287A JP 19551287 A JP19551287 A JP 19551287A JP S6439029 A JPS6439029 A JP S6439029A
Authority
JP
Japan
Prior art keywords
layer
resist layer
patterning
film layer
sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19551287A
Other languages
Japanese (ja)
Inventor
Toshio Yanagisawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP19551287A priority Critical patent/JPS6439029A/en
Publication of JPS6439029A publication Critical patent/JPS6439029A/en
Pending legal-status Critical Current

Links

Landscapes

  • Weting (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To improve the accuracy of patterning by preventing the invasion of an etching solution by patterning an ITO film layer with use of a patterned resist layer and a SiO2 film layer as a mask. CONSTITUTION:An ITO film layer 2 is formed on a wafer 1. Then, a SiO2 film layer 3 is formed, a negative type resist layer 4 is formed, and the negative type resist layer 4 is patterned. The SiO2 layer 3 is etched with an etching solution containing a mixture of fluoric acid and ammonium fluride with use of the resist layer 4 as a mask. In succession, the ITO film layer 2 is etched using the resist layer 4 and the SiO2 film layer 3 as a mask and using hydrochloric acid and nitric acid as an etching solution. Then, the resist layer 4 is removed to complete the patterning. Hereby, the SiO2 film and the ITO film are brought into strong close contact, preventing the invasion of the etchant therein. Thus, the amount of side etching is reduced to improve patterning accuracy.
JP19551287A 1987-08-05 1987-08-05 Manufacture of semiconductor device Pending JPS6439029A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19551287A JPS6439029A (en) 1987-08-05 1987-08-05 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19551287A JPS6439029A (en) 1987-08-05 1987-08-05 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6439029A true JPS6439029A (en) 1989-02-09

Family

ID=16342312

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19551287A Pending JPS6439029A (en) 1987-08-05 1987-08-05 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6439029A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100345204C (en) * 2002-03-19 2007-10-24 索尼株式会社 Recording medium, method of recording and recording and reproducing device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100345204C (en) * 2002-03-19 2007-10-24 索尼株式会社 Recording medium, method of recording and recording and reproducing device

Similar Documents

Publication Publication Date Title
JPS6468932A (en) Dry etching
JPS6439029A (en) Manufacture of semiconductor device
JPS57204165A (en) Manufacture of charge coupling element
JPS57130431A (en) Manufacture of semiconductor device
JPS57166399A (en) Preparation of quartz vibrator
JPS57211781A (en) Patterning method of double stacking thin film
JPS57211787A (en) Amorphous silicon diode
JPS5642346A (en) Manufacture of semiconductor device
JPS5496363A (en) Electrode forming method for semiconductor device
JPS5368578A (en) Photo mask
JPS6425421A (en) Manufacture of semiconductor device
JPS5591187A (en) Method of forming electrode for semiconductor device
JPS5529106A (en) Manufacturing of semiconductor device
JPS5743431A (en) Manufacture of semiconductor device
JPS54121684A (en) Manufacture of semkconductor device
JPS5693331A (en) Manufacture of semiconductor device
JPS6435917A (en) Manufacture of semiconductor device
JPS5548933A (en) Forming of mesa groove
JPS6420624A (en) Manufacture of semiconductor device
JPS5630762A (en) Manufacture of semiconductor device
JPS56133834A (en) Manufacture of semiconductor device
JPS57137472A (en) Etching method for polycrystalline silicon
JPS6455826A (en) Manufacture of semiconductor device
JPS5534447A (en) Preparation of semicinductor device
JPS5210680A (en) Method of manufacturing photo-mask for photo etching