JPS5496370A - Mask forming method - Google Patents

Mask forming method

Info

Publication number
JPS5496370A
JPS5496370A JP313078A JP313078A JPS5496370A JP S5496370 A JPS5496370 A JP S5496370A JP 313078 A JP313078 A JP 313078A JP 313078 A JP313078 A JP 313078A JP S5496370 A JPS5496370 A JP S5496370A
Authority
JP
Japan
Prior art keywords
resist
film
ion
injection region
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP313078A
Other languages
Japanese (ja)
Inventor
Hidefumi Nakada
Yaichiro Watakabe
Tadao Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP313078A priority Critical patent/JPS5496370A/en
Publication of JPS5496370A publication Critical patent/JPS5496370A/en
Pending legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To secure formation of the mask in the course of the manufacturing processes of only the positive or negative resist by introducing the O2 impurity properly into the Cr film via the ion injecting technique.
CONSTITUTION: Resist 3 is stacked on Cr film 2 on glass substrate 1 to form a pattern through the exposure and development. The injection amount of the O2 ion is controlled to 0.01W0.1 or more in terms of the atom number ratio of O2 against Cr for the O2 density X on the surface of film 2. Then resist 3 is removed with etching via the glass plasma containing the halogen element and O2. Thus, ion injection region 2a remains with injection region 2b removed selectively. With this method, the Cr film of the region covered with the resist can be etched away, and accordingly the inverting process using the resist can be omitted. Furthermore, the minute processing becomes possible.
COPYRIGHT: (C)1979,JPO&Japio
JP313078A 1978-01-13 1978-01-13 Mask forming method Pending JPS5496370A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP313078A JPS5496370A (en) 1978-01-13 1978-01-13 Mask forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP313078A JPS5496370A (en) 1978-01-13 1978-01-13 Mask forming method

Publications (1)

Publication Number Publication Date
JPS5496370A true JPS5496370A (en) 1979-07-30

Family

ID=11548766

Family Applications (1)

Application Number Title Priority Date Filing Date
JP313078A Pending JPS5496370A (en) 1978-01-13 1978-01-13 Mask forming method

Country Status (1)

Country Link
JP (1) JPS5496370A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59117124A (en) * 1982-12-24 1984-07-06 Fujitsu Ltd Formation of wiring pattern

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59117124A (en) * 1982-12-24 1984-07-06 Fujitsu Ltd Formation of wiring pattern

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