JPS56108880A - Selectively etching method for silicon oxide film - Google Patents

Selectively etching method for silicon oxide film

Info

Publication number
JPS56108880A
JPS56108880A JP960080A JP960080A JPS56108880A JP S56108880 A JPS56108880 A JP S56108880A JP 960080 A JP960080 A JP 960080A JP 960080 A JP960080 A JP 960080A JP S56108880 A JPS56108880 A JP S56108880A
Authority
JP
Japan
Prior art keywords
silicon oxide
film
oxide film
resist
selectively
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP960080A
Other languages
Japanese (ja)
Other versions
JPS628513B2 (en
Inventor
Akira Abiru
Yoshiaki Tanimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP960080A priority Critical patent/JPS628513B2/ja
Publication of JPS56108880A publication Critical patent/JPS56108880A/en
Publication of JPS628513B2 publication Critical patent/JPS628513B2/ja
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To form a predetermined minute pattern with accuracy by coating a silicon oxide film formed on a substrate with a resist, selectively exposing the film, exposing it to a fluorine-contg. gas atmosphere, and peeling off the resist.
CONSTITUTION: Polycrystalline silicon layer 2 and silicon oxide film 3 are formed on substrate 1 in order. Film 3 is coated with negative resist 4, selectively exposed to ultraviolet rays through photomask 6 having predetermined pattern 5, and exposed to an atmosphere of a hydrogen fluoride gas such as CHF3 for a predetermined time. Resist 4 is then peeled off. Thus, film 3 corresponding to the nonexposed part is selectively removed to obtain silicon oxide film 3' having the predetermined pattern. Using film 3' as a mask, layer 2 is selectively removed by etching. Since no developer is used in this method, stain-free patterns can be formed in a high yield.
COPYRIGHT: (C)1981,JPO&Japio
JP960080A 1980-01-30 1980-01-30 Expired JPS628513B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP960080A JPS628513B2 (en) 1980-01-30 1980-01-30

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP960080A JPS628513B2 (en) 1980-01-30 1980-01-30

Publications (2)

Publication Number Publication Date
JPS56108880A true JPS56108880A (en) 1981-08-28
JPS628513B2 JPS628513B2 (en) 1987-02-23

Family

ID=11724801

Family Applications (1)

Application Number Title Priority Date Filing Date
JP960080A Expired JPS628513B2 (en) 1980-01-30 1980-01-30

Country Status (1)

Country Link
JP (1) JPS628513B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62116786A (en) * 1985-11-13 1987-05-28 Nec Corp Selective surface treatment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62116786A (en) * 1985-11-13 1987-05-28 Nec Corp Selective surface treatment

Also Published As

Publication number Publication date
JPS628513B2 (en) 1987-02-23

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