JPS57157241A - Formation of resist material and its pattern - Google Patents

Formation of resist material and its pattern

Info

Publication number
JPS57157241A
JPS57157241A JP56042293A JP4229381A JPS57157241A JP S57157241 A JPS57157241 A JP S57157241A JP 56042293 A JP56042293 A JP 56042293A JP 4229381 A JP4229381 A JP 4229381A JP S57157241 A JPS57157241 A JP S57157241A
Authority
JP
Japan
Prior art keywords
film
resist
pattern
micropattern
hmds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56042293A
Other languages
Japanese (ja)
Other versions
JPH033213B2 (en
Inventor
Ken Ogura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP56042293A priority Critical patent/JPS57157241A/en
Publication of JPS57157241A publication Critical patent/JPS57157241A/en
Publication of JPH033213B2 publication Critical patent/JPH033213B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To accurately obtain a micropattern by a dry developing method by using a mixture of polymethyl methacrylate (PMMA) with hexamethyl-disilazane (HMDS) as a negative type resist. CONSTITUTION:A semiconductor substrate 11 with a heat oxidized silicon film 12 on the surface is spin-coated with a coating soln. prepared by dissolving PMMA with 2X10<4>-200X10<4>mol.wt. and HMDS in about 10:1 vol. ratio, and the resulting film having 0.5-2mum thickness is baked at 80 deg.C for 30min to form a resist film 13. After printing a prescribed pattern with electron beams or the like 14, the substrate 11 is put in an etching tunnel 16. The tunnel is evacuated 18, gaseous O2 is introduced from the inlet 17, and the part of the film 13 unexposed to the beams 14 is removed by plasma development to obtain a resist pattern 13'. The unnecessary part of the film 12 is then removed by ion etching or other method using the film 13' as a mask, and the film 13' is removed to complete the patterning of the film 12. Thus, a micropattern of high accuracy for LSI, etc. is obtd.
JP56042293A 1981-03-25 1981-03-25 Formation of resist material and its pattern Granted JPS57157241A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56042293A JPS57157241A (en) 1981-03-25 1981-03-25 Formation of resist material and its pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56042293A JPS57157241A (en) 1981-03-25 1981-03-25 Formation of resist material and its pattern

Publications (2)

Publication Number Publication Date
JPS57157241A true JPS57157241A (en) 1982-09-28
JPH033213B2 JPH033213B2 (en) 1991-01-18

Family

ID=12631988

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56042293A Granted JPS57157241A (en) 1981-03-25 1981-03-25 Formation of resist material and its pattern

Country Status (1)

Country Link
JP (1) JPS57157241A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211143A (en) * 1981-06-23 1982-12-24 Oki Electric Ind Co Ltd Formation of micropattern
JPS5891632A (en) * 1981-11-27 1983-05-31 Oki Electric Ind Co Ltd Formation of microscopic pattern
JPS60211939A (en) * 1984-04-06 1985-10-24 Nippon Telegr & Teleph Corp <Ntt> Formation of microscopic pattern
EP0186798A2 (en) * 1984-12-07 1986-07-09 International Business Machines Corporation Top imaged plasma developable resists
EP0198215A2 (en) * 1985-03-19 1986-10-22 International Business Machines Corporation A process for rendering a polymeric material resistant to an oxygen-containing plasma
JPS61248035A (en) * 1985-04-26 1986-11-05 Nippon Zeon Co Ltd Photoresist composition having improved adhesion property
JPS61268028A (en) * 1985-04-08 1986-11-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Development of mask image in photoresist
JPS62137830A (en) * 1985-12-12 1987-06-20 Mitsubishi Electric Corp Fine-pattern forming method
EP0260489A2 (en) * 1986-09-18 1988-03-23 International Business Machines Corporation Microlithographic resist containing poly(1,1-dialkylsilazane)
EP0919874A2 (en) * 1997-11-26 1999-06-02 TRW Inc. Photoresist composition effective for use as an ion etch barrier after patterning

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS494851A (en) * 1972-05-04 1974-01-17
JPS5339115A (en) * 1976-09-22 1978-04-10 Hitachi Ltd Photosensitive recording medium
JPS53135621A (en) * 1977-05-02 1978-11-27 Hitachi Ltd Photosensitive composition
JPS5471989A (en) * 1977-11-18 1979-06-08 Cho Lsi Gijutsu Kenkyu Kumiai Method of developing electron ray resist
JPS5471988A (en) * 1977-11-18 1979-06-08 Cho Lsi Gijutsu Kenkyu Kumiai Method of developing electron ray resist
JPS5472680A (en) * 1977-11-22 1979-06-11 Cho Lsi Gijutsu Kenkyu Kumiai Method of developing electron ray resist
JPS5472681A (en) * 1977-11-22 1979-06-11 Cho Lsi Gijutsu Kenkyu Kumiai Method of forming pattern

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS494851A (en) * 1972-05-04 1974-01-17
JPS5339115A (en) * 1976-09-22 1978-04-10 Hitachi Ltd Photosensitive recording medium
JPS53135621A (en) * 1977-05-02 1978-11-27 Hitachi Ltd Photosensitive composition
JPS5471989A (en) * 1977-11-18 1979-06-08 Cho Lsi Gijutsu Kenkyu Kumiai Method of developing electron ray resist
JPS5471988A (en) * 1977-11-18 1979-06-08 Cho Lsi Gijutsu Kenkyu Kumiai Method of developing electron ray resist
JPS5472680A (en) * 1977-11-22 1979-06-11 Cho Lsi Gijutsu Kenkyu Kumiai Method of developing electron ray resist
JPS5472681A (en) * 1977-11-22 1979-06-11 Cho Lsi Gijutsu Kenkyu Kumiai Method of forming pattern

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0243172B2 (en) * 1981-06-23 1990-09-27
JPS57211143A (en) * 1981-06-23 1982-12-24 Oki Electric Ind Co Ltd Formation of micropattern
JPS5891632A (en) * 1981-11-27 1983-05-31 Oki Electric Ind Co Ltd Formation of microscopic pattern
JPS60211939A (en) * 1984-04-06 1985-10-24 Nippon Telegr & Teleph Corp <Ntt> Formation of microscopic pattern
JPH0475647B2 (en) * 1984-04-06 1992-12-01 Nippon Telegraph & Telephone
EP0186798A2 (en) * 1984-12-07 1986-07-09 International Business Machines Corporation Top imaged plasma developable resists
EP0198215A2 (en) * 1985-03-19 1986-10-22 International Business Machines Corporation A process for rendering a polymeric material resistant to an oxygen-containing plasma
JPS61268028A (en) * 1985-04-08 1986-11-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Development of mask image in photoresist
JPS61248035A (en) * 1985-04-26 1986-11-05 Nippon Zeon Co Ltd Photoresist composition having improved adhesion property
JPS62137830A (en) * 1985-12-12 1987-06-20 Mitsubishi Electric Corp Fine-pattern forming method
EP0260489A2 (en) * 1986-09-18 1988-03-23 International Business Machines Corporation Microlithographic resist containing poly(1,1-dialkylsilazane)
EP0919874A2 (en) * 1997-11-26 1999-06-02 TRW Inc. Photoresist composition effective for use as an ion etch barrier after patterning
EP0919874A3 (en) * 1997-11-26 2000-06-07 TRW Inc. Photoresist composition effective for use as an ion etch barrier after patterning

Also Published As

Publication number Publication date
JPH033213B2 (en) 1991-01-18

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