JPS55138835A - Method of forming photoresist pattern - Google Patents

Method of forming photoresist pattern

Info

Publication number
JPS55138835A
JPS55138835A JP4644379A JP4644379A JPS55138835A JP S55138835 A JPS55138835 A JP S55138835A JP 4644379 A JP4644379 A JP 4644379A JP 4644379 A JP4644379 A JP 4644379A JP S55138835 A JPS55138835 A JP S55138835A
Authority
JP
Japan
Prior art keywords
film
photoresist pattern
coated
photoresist
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4644379A
Other languages
Japanese (ja)
Inventor
Takaaki Momose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4644379A priority Critical patent/JPS55138835A/en
Publication of JPS55138835A publication Critical patent/JPS55138835A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To remarkably improve the accuracy of forming a fine photoresist pattern by employing two types of different resists having different properties to form a resist pattern having both excellent adherence and resolution. CONSTITUTION:The first photoresist film 11 having desired adherence is coated on a semiconductor substrate 10, exposed with light, developed, and the first photoresist film 11 is coated on the substrate 10. Then, the second photoresist film 12 having slower ashing speed than the film 11 with desired resolution is coated on the film 11, and patterned as desired. Thereafter, with the second photoresist pattern as a mask the exposed film 11 is ashed and removed.
JP4644379A 1979-04-16 1979-04-16 Method of forming photoresist pattern Pending JPS55138835A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4644379A JPS55138835A (en) 1979-04-16 1979-04-16 Method of forming photoresist pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4644379A JPS55138835A (en) 1979-04-16 1979-04-16 Method of forming photoresist pattern

Publications (1)

Publication Number Publication Date
JPS55138835A true JPS55138835A (en) 1980-10-30

Family

ID=12747303

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4644379A Pending JPS55138835A (en) 1979-04-16 1979-04-16 Method of forming photoresist pattern

Country Status (1)

Country Link
JP (1) JPS55138835A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4507331A (en) * 1983-12-12 1985-03-26 International Business Machines Corporation Dry process for forming positive tone micro patterns
JPH01309054A (en) * 1988-06-07 1989-12-13 Mitsubishi Electric Corp Formation of fine pattern

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4507331A (en) * 1983-12-12 1985-03-26 International Business Machines Corporation Dry process for forming positive tone micro patterns
JPH01309054A (en) * 1988-06-07 1989-12-13 Mitsubishi Electric Corp Formation of fine pattern

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