JPS6421450A - Production of mask - Google Patents

Production of mask

Info

Publication number
JPS6421450A
JPS6421450A JP17704787A JP17704787A JPS6421450A JP S6421450 A JPS6421450 A JP S6421450A JP 17704787 A JP17704787 A JP 17704787A JP 17704787 A JP17704787 A JP 17704787A JP S6421450 A JPS6421450 A JP S6421450A
Authority
JP
Japan
Prior art keywords
film
silicide
resist
chromium
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17704787A
Other languages
Japanese (ja)
Other versions
JPH0661000B2 (en
Inventor
Yoichi Usui
Setsuo Nagashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17704787A priority Critical patent/JPH0661000B2/en
Publication of JPS6421450A publication Critical patent/JPS6421450A/en
Publication of JPH0661000B2 publication Critical patent/JPH0661000B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To form fine mask patterns with good accuracy and high reliability so that the higher integration of semiconductor integrated circuits and the higher reliability thereof are obtd. by using a resist film and extremely thin silicide acting as an intermediate resist. CONSTITUTION:A chromium film 12 is formed on a substrate 11 consisting of, for example, quartz, which is transparent to light and a silicide film 14 and the resist film 13 are formed thereon. The resist film 13 is then exposed and developed to form a resist pattern 13a. The silicide film 14 is etched with the resist pattern 13a as a mask. The resist pattern 13a is then stripped and a chromium film 12 is etched with the silicide pattern 14 as a mask. Namely, the silicide and chromium are selectively etchable and since the silicide film 14 is a thin film, the fine chromium pattern 12 is formed with the good accuracy.
JP17704787A 1987-07-17 1987-07-17 Mask manufacturing method Expired - Fee Related JPH0661000B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17704787A JPH0661000B2 (en) 1987-07-17 1987-07-17 Mask manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17704787A JPH0661000B2 (en) 1987-07-17 1987-07-17 Mask manufacturing method

Publications (2)

Publication Number Publication Date
JPS6421450A true JPS6421450A (en) 1989-01-24
JPH0661000B2 JPH0661000B2 (en) 1994-08-10

Family

ID=16024208

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17704787A Expired - Fee Related JPH0661000B2 (en) 1987-07-17 1987-07-17 Mask manufacturing method

Country Status (1)

Country Link
JP (1) JPH0661000B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02117963U (en) * 1989-03-11 1990-09-21
US7226866B2 (en) 2004-05-28 2007-06-05 Fujitsu Limited Etching method for making a reticle
JP2015099183A (en) * 2013-11-18 2015-05-28 Hoya株式会社 Photomask production method and pattern transfer method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102021116587B3 (en) 2021-06-28 2022-07-07 Jenoptik Optical Systems Gmbh Method of making an etch mask, method of etching a pattern in a substrate, use of a tetrel layer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02117963U (en) * 1989-03-11 1990-09-21
US7226866B2 (en) 2004-05-28 2007-06-05 Fujitsu Limited Etching method for making a reticle
JP2015099183A (en) * 2013-11-18 2015-05-28 Hoya株式会社 Photomask production method and pattern transfer method

Also Published As

Publication number Publication date
JPH0661000B2 (en) 1994-08-10

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees