JPS6421450A - Production of mask - Google Patents
Production of maskInfo
- Publication number
- JPS6421450A JPS6421450A JP17704787A JP17704787A JPS6421450A JP S6421450 A JPS6421450 A JP S6421450A JP 17704787 A JP17704787 A JP 17704787A JP 17704787 A JP17704787 A JP 17704787A JP S6421450 A JPS6421450 A JP S6421450A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicide
- resist
- chromium
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE:To form fine mask patterns with good accuracy and high reliability so that the higher integration of semiconductor integrated circuits and the higher reliability thereof are obtd. by using a resist film and extremely thin silicide acting as an intermediate resist. CONSTITUTION:A chromium film 12 is formed on a substrate 11 consisting of, for example, quartz, which is transparent to light and a silicide film 14 and the resist film 13 are formed thereon. The resist film 13 is then exposed and developed to form a resist pattern 13a. The silicide film 14 is etched with the resist pattern 13a as a mask. The resist pattern 13a is then stripped and a chromium film 12 is etched with the silicide pattern 14 as a mask. Namely, the silicide and chromium are selectively etchable and since the silicide film 14 is a thin film, the fine chromium pattern 12 is formed with the good accuracy.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17704787A JPH0661000B2 (en) | 1987-07-17 | 1987-07-17 | Mask manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17704787A JPH0661000B2 (en) | 1987-07-17 | 1987-07-17 | Mask manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6421450A true JPS6421450A (en) | 1989-01-24 |
JPH0661000B2 JPH0661000B2 (en) | 1994-08-10 |
Family
ID=16024208
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17704787A Expired - Fee Related JPH0661000B2 (en) | 1987-07-17 | 1987-07-17 | Mask manufacturing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0661000B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02117963U (en) * | 1989-03-11 | 1990-09-21 | ||
US7226866B2 (en) | 2004-05-28 | 2007-06-05 | Fujitsu Limited | Etching method for making a reticle |
JP2015099183A (en) * | 2013-11-18 | 2015-05-28 | Hoya株式会社 | Photomask production method and pattern transfer method |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102021116587B3 (en) | 2021-06-28 | 2022-07-07 | Jenoptik Optical Systems Gmbh | Method of making an etch mask, method of etching a pattern in a substrate, use of a tetrel layer |
-
1987
- 1987-07-17 JP JP17704787A patent/JPH0661000B2/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02117963U (en) * | 1989-03-11 | 1990-09-21 | ||
US7226866B2 (en) | 2004-05-28 | 2007-06-05 | Fujitsu Limited | Etching method for making a reticle |
JP2015099183A (en) * | 2013-11-18 | 2015-05-28 | Hoya株式会社 | Photomask production method and pattern transfer method |
Also Published As
Publication number | Publication date |
---|---|
JPH0661000B2 (en) | 1994-08-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |