JPS5636134A - Forming method for pattern of semiconductor substrate - Google Patents
Forming method for pattern of semiconductor substrateInfo
- Publication number
- JPS5636134A JPS5636134A JP11164979A JP11164979A JPS5636134A JP S5636134 A JPS5636134 A JP S5636134A JP 11164979 A JP11164979 A JP 11164979A JP 11164979 A JP11164979 A JP 11164979A JP S5636134 A JPS5636134 A JP S5636134A
- Authority
- JP
- Japan
- Prior art keywords
- film
- pattern
- polymethyl methacrylate
- methacrylate
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
Abstract
PURPOSE:To enable the formation of a minute pattern by a method wherein a copolymer film of polyglycidil methacrylate and polymethyl methacrylate, a polymethyl methacrylate film and the third resist film, which has a light shielding property to lower portions, are formed on the substrate. CONSTITUTION:The first resist film 3 consisting of a copolymer of polyglycidil methacrylate and polymethyl methacrylate, the second film 4 consisting of polymethyl methacrylate and the third film 5' consisting of AZ1 350, etc. are successively made up on the Si substrate 1 with a PSG film 2. The film 5' is patterned first, ultraviolet rays are irradiated, and the film is developed, thus obtaining a pattern 3' of the first film 3 (the second film 4 is dissolved). Thus, high resolution is gained by the second and third resist films 4, 5', a high resisting property and an adhering property to wet etching are acquired by the first resist film 3, and a minute pattern of the semiconductor device highly integrated can be formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11164979A JPS5636134A (en) | 1979-09-03 | 1979-09-03 | Forming method for pattern of semiconductor substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11164979A JPS5636134A (en) | 1979-09-03 | 1979-09-03 | Forming method for pattern of semiconductor substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5636134A true JPS5636134A (en) | 1981-04-09 |
JPS6152567B2 JPS6152567B2 (en) | 1986-11-13 |
Family
ID=14566667
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11164979A Granted JPS5636134A (en) | 1979-09-03 | 1979-09-03 | Forming method for pattern of semiconductor substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5636134A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59125624A (en) * | 1982-12-29 | 1984-07-20 | Fujitsu Ltd | Forming method of pattern |
JPS60106132A (en) * | 1983-11-15 | 1985-06-11 | Fujitsu Ltd | Formation of pattern |
-
1979
- 1979-09-03 JP JP11164979A patent/JPS5636134A/en active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59125624A (en) * | 1982-12-29 | 1984-07-20 | Fujitsu Ltd | Forming method of pattern |
JPH0376574B2 (en) * | 1982-12-29 | 1991-12-05 | Fujitsu Ltd | |
JPS60106132A (en) * | 1983-11-15 | 1985-06-11 | Fujitsu Ltd | Formation of pattern |
JPH0458168B2 (en) * | 1983-11-15 | 1992-09-16 | Fujitsu Ltd |
Also Published As
Publication number | Publication date |
---|---|
JPS6152567B2 (en) | 1986-11-13 |
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