JPS5595324A - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device

Info

Publication number
JPS5595324A
JPS5595324A JP16581578A JP16581578A JPS5595324A JP S5595324 A JPS5595324 A JP S5595324A JP 16581578 A JP16581578 A JP 16581578A JP 16581578 A JP16581578 A JP 16581578A JP S5595324 A JPS5595324 A JP S5595324A
Authority
JP
Japan
Prior art keywords
opening
film
processing
ultraviolet light
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16581578A
Other languages
Japanese (ja)
Other versions
JPS57645B2 (en
Inventor
Kenji Sugishima
Satoshi Suda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16581578A priority Critical patent/JPS5595324A/en
Publication of JPS5595324A publication Critical patent/JPS5595324A/en
Publication of JPS57645B2 publication Critical patent/JPS57645B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To perform processing and disposition of various kinds by a construction wherein the mask has photoresist layers of different sensitivity wave-length each other.
CONSTITUTION: The positive type resist which is suitable for fine processing pattern is adopted. First, the polymethyl methacrylate film 12 is applied to the substrate 11 and exposed to far-ultraviolet light of 200W300nm through the mask pattern and the opening 12A is obtained by development. Next, another photoresist film 14 which is sensitive for wavelength 190W260nm is applied to it, and exposed to the ultraviolet light through the mask pattern of the wider opening than the opening 12A, and the opening 14A is obtained by development. In the second exposure the opening 12A on the film 14 will not grow on account of low sensitivity of film 12 to ultraviolet light. Thus the two layered mask which has different pattern each other is obtained by the positive type resists of different sensitivity wavelength. So simplification of processing or processing of the device that has special structure is possible.
COPYRIGHT: (C)1980,JPO&Japio
JP16581578A 1978-12-30 1978-12-30 Manufacturing method of semiconductor device Granted JPS5595324A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16581578A JPS5595324A (en) 1978-12-30 1978-12-30 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16581578A JPS5595324A (en) 1978-12-30 1978-12-30 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5595324A true JPS5595324A (en) 1980-07-19
JPS57645B2 JPS57645B2 (en) 1982-01-07

Family

ID=15819514

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16581578A Granted JPS5595324A (en) 1978-12-30 1978-12-30 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5595324A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02302037A (en) * 1989-05-16 1990-12-14 Mitsubishi Electric Corp Formation of pattern
US6051454A (en) * 1997-09-11 2000-04-18 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
DE10233209A1 (en) * 2002-07-22 2004-02-05 Infineon Technologies Ag Irradiating resist during the production of integrated switching arrangement comprises forming radiation-sensitive resist layer arrangement after producing layer to be structured and irradiating the resist layer arrangement
US6960424B2 (en) * 2001-07-11 2005-11-01 Canon Kabushiki Kaisha Method for manufacturing microstructure, method for manufacturing liquid discharge head, and liquid discharge head
CN102830588A (en) * 2012-09-19 2012-12-19 上海华力微电子有限公司 Method for fabricating phase-shift photomask
CN102841499A (en) * 2012-09-19 2012-12-26 上海华力微电子有限公司 Phase-shift photomask fabrication method
CN102866575A (en) * 2012-10-12 2013-01-09 上海华力微电子有限公司 Manufacture method of phase-shift optical mask
CN102879996A (en) * 2012-10-12 2013-01-16 上海华力微电子有限公司 Method for manufacturing phase shift photomask
CN102902153A (en) * 2012-11-12 2013-01-30 上海华力微电子有限公司 Method for fabricating phase shift photomask
CN105980936A (en) * 2014-02-17 2016-09-28 富士胶片株式会社 Pattern forming method, etching method, method for manufacturing electronic device, and electronic device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02302037A (en) * 1989-05-16 1990-12-14 Mitsubishi Electric Corp Formation of pattern
US6051454A (en) * 1997-09-11 2000-04-18 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
US6960424B2 (en) * 2001-07-11 2005-11-01 Canon Kabushiki Kaisha Method for manufacturing microstructure, method for manufacturing liquid discharge head, and liquid discharge head
US7526863B2 (en) 2001-07-11 2009-05-05 Canon Kabushiki Kaisha Method for manufacturing a microstructure
DE10233209A1 (en) * 2002-07-22 2004-02-05 Infineon Technologies Ag Irradiating resist during the production of integrated switching arrangement comprises forming radiation-sensitive resist layer arrangement after producing layer to be structured and irradiating the resist layer arrangement
CN102830588A (en) * 2012-09-19 2012-12-19 上海华力微电子有限公司 Method for fabricating phase-shift photomask
CN102841499A (en) * 2012-09-19 2012-12-26 上海华力微电子有限公司 Phase-shift photomask fabrication method
CN102866575A (en) * 2012-10-12 2013-01-09 上海华力微电子有限公司 Manufacture method of phase-shift optical mask
CN102879996A (en) * 2012-10-12 2013-01-16 上海华力微电子有限公司 Method for manufacturing phase shift photomask
CN102902153A (en) * 2012-11-12 2013-01-30 上海华力微电子有限公司 Method for fabricating phase shift photomask
CN105980936A (en) * 2014-02-17 2016-09-28 富士胶片株式会社 Pattern forming method, etching method, method for manufacturing electronic device, and electronic device
US9810981B2 (en) 2014-02-17 2017-11-07 Fujifilm Corporation Pattern formation method, etching method, electronic device manufacturing method, and electronic device

Also Published As

Publication number Publication date
JPS57645B2 (en) 1982-01-07

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