JPS5580323A - Pattern forming method for photoresist-film - Google Patents
Pattern forming method for photoresist-filmInfo
- Publication number
- JPS5580323A JPS5580323A JP15453878A JP15453878A JPS5580323A JP S5580323 A JPS5580323 A JP S5580323A JP 15453878 A JP15453878 A JP 15453878A JP 15453878 A JP15453878 A JP 15453878A JP S5580323 A JPS5580323 A JP S5580323A
- Authority
- JP
- Japan
- Prior art keywords
- film
- concave
- photoresist
- remained
- ultra
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Manufacturing Of Printed Circuit Boards (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
PURPOSE: To obtain a precise pattern by employing a positive photoresist twice in forming a photoresist-film pattern on a film deposited on a semiconductor substrate with the surface having concave and convex portions or substrate.
CONSTITUTION: A positive-type photoresist film 2 is applied on a semiconductor substrate 1, on the surface of which concave and convex portions are yielded, and the thickness of the concave portion is thinner than that of convex portion. Then, ultra-violet ray 3 is illuminated all over the surface under the condition that only the film 2 in the concave portion is remained, and development is made. The film 2 on the convex portions are removed with the films 2' in the concave portions being remained, thereby the surface is falttened. Thereafter, the film 2 is again photosensed sufficiently by illumination of ultra-violet ray 4, and a positive-type resist film 5 is likewise formed. Then, ultra-violet ray 7 is selectively illuminated by using a photomask 6, the development is made, and the photo-sensitive portion of the film 5 is removed. At this time, the films 2' which are remained in the concave portions are also removed, and a resist-film pattern having holes 8aW8c can be obtained.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15453878A JPS5580323A (en) | 1978-12-12 | 1978-12-12 | Pattern forming method for photoresist-film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15453878A JPS5580323A (en) | 1978-12-12 | 1978-12-12 | Pattern forming method for photoresist-film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5580323A true JPS5580323A (en) | 1980-06-17 |
Family
ID=15586439
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15453878A Pending JPS5580323A (en) | 1978-12-12 | 1978-12-12 | Pattern forming method for photoresist-film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5580323A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58132926A (en) * | 1982-02-03 | 1983-08-08 | Matsushita Electric Ind Co Ltd | Formation of pattern |
| JPS58171818A (en) * | 1982-03-31 | 1983-10-08 | Matsushita Electric Ind Co Ltd | Method and apparatus for manufacturing semiconductor device |
| JPS62204926A (en) * | 1986-03-06 | 1987-09-09 | Toray Ind Inc | Manufacture of polyester drawn film |
| EP1032035A1 (en) * | 1999-02-26 | 2000-08-30 | STMicroelectronics S.r.l. | Process for manufacturing electronic memory devices with cells matrix having virtual ground |
| JP2016213444A (en) * | 2015-04-10 | 2016-12-15 | 東京エレクトロン株式会社 | Use of sub-resolution apertures to aid image reversal, guided self-organization, and selective deposition |
-
1978
- 1978-12-12 JP JP15453878A patent/JPS5580323A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58132926A (en) * | 1982-02-03 | 1983-08-08 | Matsushita Electric Ind Co Ltd | Formation of pattern |
| JPS6258654B2 (en) * | 1982-02-03 | 1987-12-07 | Matsushita Electric Ind Co Ltd | |
| JPS58171818A (en) * | 1982-03-31 | 1983-10-08 | Matsushita Electric Ind Co Ltd | Method and apparatus for manufacturing semiconductor device |
| JPH0419697B2 (en) * | 1982-03-31 | 1992-03-31 | Matsushita Electric Ind Co Ltd | |
| JPS62204926A (en) * | 1986-03-06 | 1987-09-09 | Toray Ind Inc | Manufacture of polyester drawn film |
| EP1032035A1 (en) * | 1999-02-26 | 2000-08-30 | STMicroelectronics S.r.l. | Process for manufacturing electronic memory devices with cells matrix having virtual ground |
| JP2016213444A (en) * | 2015-04-10 | 2016-12-15 | 東京エレクトロン株式会社 | Use of sub-resolution apertures to aid image reversal, guided self-organization, and selective deposition |
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