JPH0419697B2 - - Google Patents
Info
- Publication number
- JPH0419697B2 JPH0419697B2 JP57054285A JP5428582A JPH0419697B2 JP H0419697 B2 JPH0419697 B2 JP H0419697B2 JP 57054285 A JP57054285 A JP 57054285A JP 5428582 A JP5428582 A JP 5428582A JP H0419697 B2 JPH0419697 B2 JP H0419697B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- photosensitive resin
- resin film
- film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229920005989 resin Polymers 0.000 claims description 59
- 239000011347 resin Substances 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000010408 film Substances 0.000 description 78
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 230000018109 developmental process Effects 0.000 description 19
- 235000012239 silicon dioxide Nutrition 0.000 description 10
- 239000000377 silicon dioxide Substances 0.000 description 10
- 238000000576 coating method Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
Description
【発明の詳細な説明】
本発明は感光性樹脂（レジスト）膜を用いたパ
ターン形成工程を有する半導体装置の製造方法に
関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a semiconductor device including a pattern forming step using a photosensitive resin (resist) film.
半導体基板上に感光性樹脂膜パターンを形成す
る工程において、パターン巾が２〜3μｍ以下の
微細加工では通常ポジ型感光性樹脂膜が用いられ
ている。このポジ型感光性樹脂の露光方法とし
て、歩留まり向上および半導体基板の反りの補正
が可能であるという理由により、ステツプアンド
リピート方式の投影露光方法が用いられる。 In the process of forming a photosensitive resin film pattern on a semiconductor substrate, a positive photosensitive resin film is usually used for microfabrication in which the pattern width is 2 to 3 μm or less. As an exposure method for this positive photosensitive resin, a step-and-repeat projection exposure method is used because it is possible to improve yield and correct warpage of a semiconductor substrate.
この投影露光方法は第１図に示すように、マス
ク１を通過した光線Ｘをレンズ２を介して半導体
基板３上のレジスト（感光性樹脂）４上に結像す
るようにしたものである。ただし、この方法はレ
ンズ２を使用するため、通常の光線を使用したの
では色収差を生じパターンの微細化に支障をきた
すので、その光線Ｘとしては単色光を用いなけれ
ばならない。しかしながら、単色光を用いたため
に、入射光Ｘとその基板３からの反射光により定
在波が発生する。 As shown in FIG. 1, this projection exposure method is such that a light beam X passing through a mask 1 is imaged onto a resist (photosensitive resin) 4 on a semiconductor substrate 3 via a lens 2. However, since this method uses a lens 2, using a normal light beam would cause chromatic aberration and hinder pattern miniaturization, so the light beam X must be monochromatic light. However, since monochromatic light is used, a standing wave is generated by the incident light X and its reflected light from the substrate 3.
このことを第２図を用いて説明する。同図に示
すように、半導体基板５上に異なる膜厚を有する
二酸化硅素膜６，７を形成した後、この二酸化硅
素膜６，７上に感光性樹脂膜８を塗布する。この
とき、二酸化硅素膜６，７と感光性樹脂膜８の屈
折率がほぼ等しいため、感光性樹脂膜８上から光
照射しても二酸化硅素膜６，７と感光性樹脂膜８
との界面での反射はおこらない。その代り入射光
は半導体基板５で反射した光と干渉し、二酸化硅
素膜６，７およびレジスト膜８内に定在波９がで
きる。定在波の腹と節は入射光の波長が4358Åと
すると、743Åの周期でできる。従つて、二酸化
硅素膜６，７の膜厚d1およびd2の差（d1−d2）が
743Åのとき感光性樹脂膜８との界面での光強度
差が大きくなる。 This will be explained using FIG. 2. As shown in the figure, after silicon dioxide films 6 and 7 having different thicknesses are formed on a semiconductor substrate 5, a photosensitive resin film 8 is applied onto the silicon dioxide films 6 and 7. At this time, since the refractive index of the silicon dioxide films 6, 7 and the photosensitive resin film 8 are almost equal, even if light is irradiated from above the photosensitive resin film 8, the silicon dioxide films 6, 7 and the photosensitive resin film 8
No reflection occurs at the interface. Instead, the incident light interferes with the light reflected by the semiconductor substrate 5, and a standing wave 9 is generated in the silicon dioxide films 6, 7 and the resist film 8. If the wavelength of the incident light is 4358 Å, the antinodes and nodes of the standing wave are formed with a period of 743 Å. Therefore, the difference (d 1 − d 2 ) between the film thicknesses d 1 and d 2 of the silicon dioxide films 6 and 7 is
When the thickness is 743 Å, the difference in light intensity at the interface with the photosensitive resin film 8 becomes large.
この為、例えば二酸化硅素膜６の表面では定在
波９の節ができ、一方、二酸化硅素膜７の表面で
は定在波９の腹ができる。この様な場合、二酸化
硅素膜６表面では入射光の照射強度が弱くなり、
現像、リンス後に感光性樹脂膜８が充分除去でき
ないということが発生する。また、現像して樹脂
膜８のパターンを形成すると二酸化硅素膜６，７
上での感光性樹脂膜８のパターン巾が異なるとい
つた問題も発生する。 Therefore, for example, nodes of the standing wave 9 are formed on the surface of the silicon dioxide film 6, while antinodes of the standing wave 9 are formed on the surface of the silicon dioxide film 7. In such a case, the irradiation intensity of the incident light becomes weaker on the surface of the silicon dioxide film 6,
It may occur that the photosensitive resin film 8 cannot be removed sufficiently after development and rinsing. Furthermore, when a pattern of the resin film 8 is formed by developing, the silicon dioxide films 6, 7
Problems also arise when the pattern widths of the photosensitive resin film 8 above are different.
また、アルミニウムなどのように反射率の大き
い金属膜上に感光性樹脂膜を形成した場合、金属
膜と感光性樹脂膜界面付近に定在波の節ができる
ので薄い膜が残りやすく、寸法精度の良い樹脂膜
パターン形成が困難であつた。 In addition, when a photosensitive resin film is formed on a metal film with high reflectivity such as aluminum, nodes of standing waves are formed near the interface between the metal film and the photosensitive resin film, which tends to leave a thin film, resulting in dimensional accuracy. It was difficult to form a good resin film pattern.
以上の様なことは、特に段差を有する基板上に
おいては段差部で感光性樹脂膜厚の変化が大きく
微細パターンが精度よく形成できないという欠点
があつた。 The above-mentioned method has a drawback that, especially on a substrate having a step, the thickness of the photosensitive resin film varies greatly at the step, making it impossible to form a fine pattern with high precision.
本発明は上記欠点にかんがみなされたもので、
微細パターンの必要な半導体装置、特に投影露光
方法を用いてパターン形成を行なう半導体装置の
製造において、微細パターンを基板の種類および
段差に関係なく精度良く形成出来る方法を提供す
るものである。 The present invention has been made in view of the above drawbacks.
The present invention provides a method for forming a fine pattern with high accuracy regardless of the type of substrate and the height difference in the manufacture of a semiconductor device that requires a fine pattern, particularly a semiconductor device whose pattern is formed using a projection exposure method.
すなわち、本発明の方法は、段差を有する半導
体基板上に、ほぼ感光済の感光性樹脂膜よりなる
第１層を前記基板の段差より厚く形成する工程
と、前記第１層上に未感光の感光性樹脂膜を塗布
して第２層を形成するとともに、前記第１層と第
２層間に両者の混合層を形成し、同一現像液に対
して現像速度が前記第１層、中間層、第２層の順
に遅くなる３層膜を形成する工程と、前記３層膜
を選択的に露光した後前記現像液で処理し、前記
３層膜に同一のパターンを形成する工程とを備え
たものである。 That is, the method of the present invention includes the steps of forming a first layer made of an almost exposed photosensitive resin film on a semiconductor substrate having a step to be thicker than the step of the substrate, and forming an unexposed layer on the first layer. A photosensitive resin film is applied to form a second layer, and a mixed layer of the first layer and the second layer is formed between the first layer and the second layer, and the development speed is lower than that of the first layer, the intermediate layer, and the intermediate layer with respect to the same developer. a step of forming a three-layer film with the second layer slowing down in the order of the second layer; and a step of selectively exposing the three-layer film to light and then treating it with the developer to form the same pattern on the three-layer film. It is something.
以下本発明の図面を用いて詳細に説明する。 The present invention will be explained in detail below using the drawings.
第３図は本発明の一実施例を示すパターン形成
工程断面図である。まず第３図Ａのごとく、半導
体又は半導体上に絶縁膜、導電膜が形成された半
導体基板１１上に、感光基が少なくとも一部、望
ましくはほとんど反応した即ち感光済の第１のポ
ジ型感光性樹脂膜よりなる第１層１２を少なくと
も0.1μｍ、望ましくは0.3μｍ以上の厚さに形成す
る。次に感光基が未反応即ち未感光の第２のポジ
型感光性樹脂膜を重ねて塗布形成する。このと
き、第１と第２の感光性樹脂膜として同一種類の
ものを用いれば、中間に第１と第２の樹脂膜の混
合層（第２層１３）と、第２の感光性樹脂膜の層
（第３層１４）が形成される。たとえば第１層１
２として感光済のポジ型感光性樹脂膜を1.8μｍ形
成し、その上に重ねて第２の感光性樹脂膜として
同一種類のポジ型感光性樹脂膜を回転塗布する。 FIG. 3 is a sectional view of a pattern forming process showing an embodiment of the present invention. First, as shown in FIG. 3A, a first positive-type photosensitive material is applied onto a semiconductor substrate 11 in which a semiconductor or an insulating film and a conductive film are formed on the semiconductor. The first layer 12 made of a synthetic resin film is formed to have a thickness of at least 0.1 μm, preferably 0.3 μm or more. Next, a second positive photosensitive resin film in which the photosensitive groups are unreacted, that is, unsensitized, is coated and formed. At this time, if the same type of photosensitive resin films are used as the first and second photosensitive resin films, a mixed layer (second layer 13) of the first and second resin films and a second photosensitive resin film are formed in the middle. (third layer 14) is formed. For example, the first layer 1
As step 2, a 1.8 μm thick exposed positive photosensitive resin film is formed, and a positive photosensitive resin film of the same type is spin-coated thereon as a second photosensitive resin film.
次に投影露光方法により、選択的に光照射を行
ない第２層１３および第３層１４に感光領域１５
を形成する。このときの照射量は第１層１２はす
でに感光しており、第２層１３および第３層１４
を反応させる照射量でよい。（第３図Ｂ）
次に通常の現像・リンス処理により感光領域１
５およびその下部の第１層１２を除去し、開孔部
１６を形成する（第３図Ｃ）。次にこの第１層１
２、第２層１３および第３層１４の感光性樹脂膜
のパターンをマスクとして半導体装置の製造工程
の一部である基板１１のエツチング処理等を行な
う。 Next, using a projection exposure method, light is selectively irradiated onto the second layer 13 and the third layer 14 in the photosensitive area 15.
form. The amount of irradiation at this time is such that the first layer 12 has already been exposed to light, and the second layer 13 and third layer 14
The amount of irradiation required to cause a reaction is sufficient. (Figure 3B) Next, the photosensitive area 1 is processed by normal development and rinsing.
5 and the first layer 12 below it are removed to form an opening 16 (FIG. 3C). Next, this first layer 1
2. Using the pattern of the photosensitive resin film of the second layer 13 and the third layer 14 as a mask, an etching process or the like is performed on the substrate 11, which is a part of the manufacturing process of a semiconductor device.
以上の第３図の方法によれば、現像速度の速い
感光済の感光性樹脂膜よりなる第１層１２を所定
の厚さに基板１１上に形成してあるため、選択的
光照射時間を短かくすることができる。また段差
を有する基板１１上での樹脂膜厚の差に関係なく
照射量が一定でよい。かつ、たとえば基板１１の
凹部１１ａの感光性樹脂膜を完全に現像除去する
ために現像時間を長くしても、第３図Ｃのごとく
凹部１１ａは現像速度の速い第１層１２で埋め込
まれ凹部１１ａ上も凹部１１ａ以外の平坦な基板
１１上と同じ状態で現像速度の遅い第２、第３層
が存在しており、未照射領域（第３図Ｃのロ）の
部分の膜厚減少量が少なく、精度良くパターン形
成を行なうことができる。 According to the above method shown in FIG. 3, since the first layer 12 made of a photosensitive resin film with a high development speed is formed on the substrate 11 to a predetermined thickness, the selective light irradiation time is Can be shortened. Further, the irradiation amount may be constant regardless of the difference in resin film thickness on the substrate 11 having a step. For example, even if the development time is increased to completely remove the photosensitive resin film in the recesses 11a of the substrate 11, the recesses 11a are filled with the first layer 12 which has a faster development speed, and the recesses are filled as shown in FIG. 3C. 11a also has the same condition as on the flat substrate 11 other than the concave portion 11a, with the second and third layers having a slow development rate, and the amount of film thickness reduction in the unirradiated area (FIG. 3C, B). With this, pattern formation can be performed with high precision.
感光ずみの第１の感光性樹脂膜が0.3μｍ以下で
は、第２の感光性樹脂膜塗布後にすべて第２の感
光性樹脂と混合されて第１層１２が残らず、全て
混合層１３となる。すなわち、0.3μｍ以下ではい
わゆる第２層１３と第３層１４のみになり本発明
の効果が発揮されない。 If the exposed first photosensitive resin film has a thickness of 0.3 μm or less, it will be completely mixed with the second photosensitive resin after the second photosensitive resin film is applied, and no first layer 12 will remain, and the entire layer will become a mixed layer 13. . That is, if the thickness is less than 0.3 μm, only the so-called second layer 13 and third layer 14 will be formed, and the effect of the present invention will not be exhibited.
なお第１層１２となる第１の感光性樹脂は基板
１１上に塗布後感光させてもよいし、あらかじめ
感光済のポジ型感光性樹脂膜を塗布してもよい。
第１層１２の膜厚は基板１１の段差より厚く、か
つ基板１１の表面より望ましくは0.3μｍ以上の厚
さに形成するのが望ましい。また、第１、第２、
第３層１２，１３，１４の総膜厚が1μｍ以内の
ときは第１層１２はその半分以上とするのが望ま
しい。第１と第２の感光性樹脂膜は同一種類のも
のでも、異なる種類のものでも同一現像液ではパ
ターン形成できるものならばよい。また、膜形成
は、上記方法に限定するものではない。 Note that the first photosensitive resin forming the first layer 12 may be applied onto the substrate 11 and then exposed to light, or a positive photosensitive resin film that has been exposed in advance may be applied.
The thickness of the first layer 12 is desirably thicker than the step difference in the substrate 11, and desirably 0.3 μm or more thicker than the surface of the substrate 11. Also, the first, second,
When the total thickness of the third layers 12, 13, and 14 is within 1 μm, it is desirable that the first layer 12 has a thickness of at least half of that. The first and second photosensitive resin films may be of the same type or different types as long as they can be patterned using the same developer. Furthermore, film formation is not limited to the above method.
次に、第３図における現像をさらに第４図を用
いて説明する。さて、第１の感光性樹脂膜（第４
図の膜厚ｔ）を回転塗布した場合の、膜厚方向の
現像特性すなわち第３図イの部分の現像特性は第
４図イに示すようになる。第２の感光性樹脂膜形
成後の現像速度すなわち第３図Ｃのロの部分の現
像特性は第４図ロとなる。又、露光後この３層膜
の現像特性は第４図ハとなる。第４図に示すごと
く第１、第２、第３層１２，１３，１４全体の膜
厚約2μｍの樹脂膜のうち1.2〜1.6μｍの間に位置
するいわゆる中間混合層である第２層１３は現像
速度が遅い部分となる。このことは、膜厚ｔを有
する感光済の現像速度の速い第１のポジ型感光性
樹脂が第２の未感光のポジ型感光性樹脂の塗布に
よる混合にてｔよりも薄い膜厚の第１層１２とな
つたことになる。すなわち、ｔ（＝1.8μｍ）のも
のが混合層の形成により0.6μｍ以上薄くなり1.2μ
ｍ以下の膜厚となつたことになる。第１層１２
は、感光性樹脂膜と基板との粘性を考慮すれば
0.1μｍ、望ましくは前述したごとく0.3μｍ以上形
成するように第１、第２の感光性樹脂膜の塗布制
御が望ましい。 Next, the development shown in FIG. 3 will be further explained using FIG. 4. Now, the first photosensitive resin film (the fourth
When the film thickness t) shown in the figure is spin-coated, the development characteristics in the film thickness direction, that is, the development characteristics in the portion A of FIG. 3 are as shown in FIG. 4A. The development speed after the formation of the second photosensitive resin film, that is, the development characteristics of the portion B in FIG. 3C is as shown in FIG. 4B. Further, the development characteristics of this three-layer film after exposure are as shown in FIG. 4C. As shown in FIG. 4, a second layer 13, which is a so-called intermediate mixed layer, is located between 1.2 and 1.6 μm of the resin film having a thickness of about 2 μm for the entire first, second, and third layers 12, 13, and 14. is the area where the development speed is slow. This means that when the exposed first positive photosensitive resin with a film thickness t and a high development rate is mixed by coating with the second unexposed positive photosensitive resin, a second positive photosensitive resin with a film thickness thinner than t is mixed. This means that there are 12 layers per layer. In other words, the thickness of t (=1.8μm) becomes thinner by more than 0.6μm due to the formation of the mixed layer, and becomes 1.2μm.
This means that the film thickness is less than m. First layer 12
Considering the viscosity between the photosensitive resin film and the substrate,
It is desirable to control the coating of the first and second photosensitive resin films so that the thickness is 0.1 μm, preferably 0.3 μm or more as described above.
本発明は第４図ロの曲線に示すごとき現像特性
を実現する構造を得ることにより、正確なパター
ンを精度良く形成するものである。 The present invention is intended to form accurate patterns with high precision by obtaining a structure that realizes the development characteristics as shown by the curve in FIG. 4B.
なお、本発明においては、第１、第２、第３層
１２，１３，１４の膜厚制御が重要となるが、感
光ずみの第１の感光性樹脂形成後、現像速度を遅
くしないためには、ベーキング温度を室温から
90゜程度までの低い温度にするのが望ましい。 In the present invention, controlling the film thickness of the first, second, and third layers 12, 13, and 14 is important, but in order not to slow down the development speed after forming the exposed first photosensitive resin, changes the baking temperature from room temperature to
It is desirable to keep the temperature as low as 90°.
なお第２層１３および第３層１４の膜厚は第２
の感光性樹脂膜の塗布方法たとえば感光性樹脂液
滴下方法、時間および回転数により制御すること
ができる。第２の感光性樹脂膜と第１の感光性樹
脂膜の接触時間が長い程第２層１３いわゆる混合
層の膜厚が厚くなる。したがつて第２層１３およ
び第３層１４膜を均一に形成するためには、第１
の感光性樹脂膜上に均一に第２の感光性樹脂膜を
滴下し、かつ、滴下から高速回転までの接触時間
を等しくする必要がある。 Note that the thickness of the second layer 13 and the third layer 14 is the same as that of the second layer 13 and the third layer 14.
The coating method of the photosensitive resin film can be controlled by, for example, the method of dropping photosensitive resin liquid, the time, and the number of rotations. The longer the contact time between the second photosensitive resin film and the first photosensitive resin film, the thicker the second layer 13, the so-called mixed layer. Therefore, in order to uniformly form the second layer 13 and the third layer 14, it is necessary to
It is necessary to uniformly drop the second photosensitive resin film onto the photosensitive resin film and to equalize the contact time from dropping to high speed rotation.
したがつて本発明における感光性樹脂膜の塗布
には第５図に示す装置を用るのが望ましい。すな
わち、複数個のノズル２２および光照射源２３と
第１の感光性樹脂膜塗布された半導体基板１１の
回転可能な支持体２１を有し、複数個のノズルか
ら同時に第２の感光性樹脂膜を塗布する（第５図
Ａ）。また未感光の樹脂膜を塗布した後、全面に
光照射する場合は、塗布用のノズル２２と光照射
源２３を一体に有する装置を用い第５図Ｂのごと
くノズル２２、光源２３を移動して行うようにす
るのが望ましい。 Therefore, it is desirable to use the apparatus shown in FIG. 5 for coating the photosensitive resin film in the present invention. That is, it has a plurality of nozzles 22, a light irradiation source 23, and a rotatable support body 21 for the semiconductor substrate 11 coated with the first photosensitive resin film, and the second photosensitive resin film is simultaneously applied from the plurality of nozzles. (Figure 5A). If the entire surface is to be irradiated with light after coating an unexposed resin film, use a device that has a coating nozzle 22 and a light irradiation source 23 in one piece, and move the nozzle 22 and light source 23 as shown in FIG. 5B. It is desirable to do so.
以上のように、本発明は現像速度の速い感光性
樹脂膜を残存させてパターン形成を行うもので、
高精度な微小パターンの形成に大きく寄与するも
のである。 As described above, the present invention forms a pattern by leaving a photosensitive resin film with a high development speed.
This greatly contributes to the formation of highly accurate micropatterns.
第１図は露光工程の概念図、第２図は従来の基
板への露光状態の断面図、第３図Ａ，Ｂ，Ｃは本
発明の一実施例にかかるパターン形成工程図、第
４図はレジスト膜の現像速度特性図、第５図Ａ，
Ｂは本発明に用いる製造装置の概略図である。
１１……半導体基板、１２，１３，１４……第
１、第２、第３層、１５……感光領域、１６……
開孔部、２２……ノズル、２３……光照射源。
Fig. 1 is a conceptual diagram of the exposure process, Fig. 2 is a cross-sectional view of a conventional exposure state to a substrate, Fig. 3 A, B, and C are pattern forming process diagrams according to an embodiment of the present invention, and Fig. 4 is the development speed characteristic diagram of the resist film, Fig. 5A,
B is a schematic diagram of a manufacturing apparatus used in the present invention. 11... Semiconductor substrate, 12, 13, 14... First, second, third layer, 15... Photosensitive region, 16...
Opening portion, 22... nozzle, 23... light irradiation source.
Claims (1)
感光性樹脂膜よりなる第１層を前記基板の段差よ
り厚く形成する工程と、前記第１層上に未感光の
感光性樹脂膜を塗布して第２層を形成するととも
に、前記第１層と第２層間に両者の混合層を形成
し、同一現像液に対して現像速度が前記第１層、
中間層、第２層の順に遅くなる３層膜を形成する
工程と、前記３層膜を選択的に露光した後前記現
像液で処理し、前記３層膜に同一のパターンを形
成する工程とを備えたことを特徴とする半導体装
置の製造方法。1. Forming a first layer made of an almost exposed photosensitive resin film on a semiconductor substrate having a step to be thicker than the step of the substrate, and applying an unexposed photosensitive resin film on the first layer. a second layer is formed between the first layer and the second layer, and a mixed layer of the first layer and the second layer is formed between the first layer and the second layer, and the development speed of the first layer with the same developer is
a step of forming a three-layer film in which the intermediate layer and the second layer are slow in order; and a step of selectively exposing the three-layer film to light and then treating it with the developer to form the same pattern on the three-layer film. A method for manufacturing a semiconductor device, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5428582A JPS58171818A (en) | 1982-03-31 | 1982-03-31 | Method and apparatus for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5428582A JPS58171818A (en) | 1982-03-31 | 1982-03-31 | Method and apparatus for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58171818A JPS58171818A (en) | 1983-10-08 |
| JPH0419697B2 true JPH0419697B2 (en) | 1992-03-31 |
Family
ID=12966286
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5428582A Granted JPS58171818A (en) | 1982-03-31 | 1982-03-31 | Method and apparatus for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58171818A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6236823A (en) * | 1985-08-10 | 1987-02-17 | Fujitsu Ltd | Resist pattern formation |
| JPH0263056A (en) * | 1988-04-05 | 1990-03-02 | Mitsubishi Kasei Corp | Formation of resist pattern |
| US4904564A (en) * | 1988-06-16 | 1990-02-27 | International Business Machines Corporation | Process for imaging multi-layer resist structure |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51129190A (en) * | 1975-05-02 | 1976-11-10 | Fujitsu Ltd | Manufacturing method of semiconductor |
| JPS5580323A (en) * | 1978-12-12 | 1980-06-17 | Nec Corp | Pattern forming method for photoresist-film |
| JPS57100428A (en) * | 1980-12-16 | 1982-06-22 | Matsushita Electronics Corp | Method for photomechanical process |
| JPS58132926A (en) * | 1982-02-03 | 1983-08-08 | Matsushita Electric Ind Co Ltd | Formation of pattern |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5411701U (en) * | 1977-06-23 | 1979-01-25 |
-
1982
- 1982-03-31 JP JP5428582A patent/JPS58171818A/en active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51129190A (en) * | 1975-05-02 | 1976-11-10 | Fujitsu Ltd | Manufacturing method of semiconductor |
| JPS5580323A (en) * | 1978-12-12 | 1980-06-17 | Nec Corp | Pattern forming method for photoresist-film |
| JPS57100428A (en) * | 1980-12-16 | 1982-06-22 | Matsushita Electronics Corp | Method for photomechanical process |
| JPS58132926A (en) * | 1982-02-03 | 1983-08-08 | Matsushita Electric Ind Co Ltd | Formation of pattern |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58171818A (en) | 1983-10-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6015650A (en) | Method for forming micro patterns of semiconductor devices | |
| US5413898A (en) | Method of forming a pattern on a substrate having a step change in height | |
| JPH07235485A (en) | Minute pattern production of semiconductor device | |
| JPH076058B2 (en) | Metal lift-off method | |
| US4599137A (en) | Method of forming resist pattern | |
| JPH0219970B2 (en) | ||
| JPH0419697B2 (en) | ||
| JPS6239817B2 (en) | ||
| JPH05343279A (en) | Manufacture of semiconductor device | |
| JPH02140914A (en) | Manufacture of semiconductor device | |
| JP2712407B2 (en) | Method of forming fine pattern using two-layer photoresist | |
| JPH06140297A (en) | Resist applying method | |
| JPS6258654B2 (en) | ||
| JPH03283418A (en) | Resist pattern forming method | |
| JPH04239116A (en) | Manufacture of semiconductor device | |
| JPS59155928A (en) | Manufacture of semiconductor device | |
| KR100250265B1 (en) | Method of manufacturing micropattern | |
| JPH0425694B2 (en) | ||
| JP2666420B2 (en) | Method for manufacturing semiconductor device | |
| JPH01239928A (en) | Formation of pattern | |
| KR100399889B1 (en) | Method for forming photoresist pattern of semiconductor device | |
| JPH0822947A (en) | Pattern formation method and manufacture of semiconductor device | |
| JPS60106132A (en) | Formation of pattern | |
| JPH0376740B2 (en) | ||
| JPS58103138A (en) | Formation of pattern |