JPS5558534A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5558534A
JPS5558534A JP13081678A JP13081678A JPS5558534A JP S5558534 A JPS5558534 A JP S5558534A JP 13081678 A JP13081678 A JP 13081678A JP 13081678 A JP13081678 A JP 13081678A JP S5558534 A JPS5558534 A JP S5558534A
Authority
JP
Japan
Prior art keywords
thin
ray
mask
exposure
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13081678A
Other languages
Japanese (ja)
Inventor
Keizo Hidejima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP13081678A priority Critical patent/JPS5558534A/en
Publication of JPS5558534A publication Critical patent/JPS5558534A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE: To simplify an alignment process by using a resist pattern for mask variant in film thickness partly after development one time of exposure which is obtainable through using an X-ray exposing mask having a plural kinds of absorber pattern variants in X-ray permeability.
CONSTITUTION: A p+-type channel stopper domain 13 is formed through diffusion on both ends of a p-type Si substrate 11, and a thick SiO2 film 12 is grown thereon. Next, a thin gate SiO2 film 14 is sticked on the substrate 11, a multiple crystal Si layer 15 for gate electrode is deposited entirely, and an X-ray resist is applied thereon to exposure and development. For X-ray mask in this case, a mask substrate 1 provided with a thick full absorber 2 and a thin full absorber 3 is used, a thin resist layer 16' is formed on the gate electrode and a thick resist layer 16 on the other portion. Then, n+-type source drain region 17 and 18 are formed, the thin layer 16 is removed through exposure and development again, and Mo wiring metal 19 is provided on the exposed gate electrode 15.
COPYRIGHT: (C)1980,JPO&Japio
JP13081678A 1978-10-24 1978-10-24 Manufacture of semiconductor device Pending JPS5558534A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13081678A JPS5558534A (en) 1978-10-24 1978-10-24 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13081678A JPS5558534A (en) 1978-10-24 1978-10-24 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5558534A true JPS5558534A (en) 1980-05-01

Family

ID=15043374

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13081678A Pending JPS5558534A (en) 1978-10-24 1978-10-24 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5558534A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61117832A (en) * 1984-11-14 1986-06-05 Oki Electric Ind Co Ltd Manufacture of semiconductor device
US7087363B2 (en) * 2002-12-17 2006-08-08 Industrial Technology Research Institute Method of forming a top gate thin film transistor
DE102017109180A1 (en) 2016-04-29 2017-11-02 Denso Corporation Provided with a control device electrical rotating machine

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61117832A (en) * 1984-11-14 1986-06-05 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPH0235448B2 (en) * 1984-11-14 1990-08-10 Oki Electric Ind Co Ltd
US7087363B2 (en) * 2002-12-17 2006-08-08 Industrial Technology Research Institute Method of forming a top gate thin film transistor
DE102017109180A1 (en) 2016-04-29 2017-11-02 Denso Corporation Provided with a control device electrical rotating machine

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