JPS577972A - Insulated gate type thin film transistor - Google Patents

Insulated gate type thin film transistor

Info

Publication number
JPS577972A
JPS577972A JP8318680A JP8318680A JPS577972A JP S577972 A JPS577972 A JP S577972A JP 8318680 A JP8318680 A JP 8318680A JP 8318680 A JP8318680 A JP 8318680A JP S577972 A JPS577972 A JP S577972A
Authority
JP
Japan
Prior art keywords
gate insulating
insulating film
thin film
film transistor
insulated gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8318680A
Other languages
Japanese (ja)
Inventor
Yoichiro Takayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8318680A priority Critical patent/JPS577972A/en
Publication of JPS577972A publication Critical patent/JPS577972A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Abstract

PURPOSE:To simplify the manufacture and to stabilile an interface between an active layer and a gate insulating film by a method wherein active layer and the gate insulating film are constituted of amorphous silicon. CONSTITUTION:The N type semiconductor amorphous silicon film 12 is made to grow on a glass substrate 11, and a drain electrode 14 and a source electrode 13 are formed and adhered thereon using a metal mask. Then a semiinsulating amorphous silicon film is made to grow thereon, and the gate insulating film 15 is formed by the process of application of a photo resist, exposure and etching. Moreover a gate electrode 16 is formed on the gate insulating film 15 using a metal mask.
JP8318680A 1980-06-19 1980-06-19 Insulated gate type thin film transistor Pending JPS577972A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8318680A JPS577972A (en) 1980-06-19 1980-06-19 Insulated gate type thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8318680A JPS577972A (en) 1980-06-19 1980-06-19 Insulated gate type thin film transistor

Publications (1)

Publication Number Publication Date
JPS577972A true JPS577972A (en) 1982-01-16

Family

ID=13795283

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8318680A Pending JPS577972A (en) 1980-06-19 1980-06-19 Insulated gate type thin film transistor

Country Status (1)

Country Link
JP (1) JPS577972A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58147070A (en) * 1982-02-25 1983-09-01 Mitsubishi Electric Corp Field effect transistor and manufacture thereof
US4707721A (en) * 1986-02-20 1987-11-17 Texas Instruments Incorporated Passivated dual dielectric gate system and method for fabricating same
JPS63219172A (en) * 1987-03-06 1988-09-12 Hosiden Electronics Co Ltd Thin-film transistor
US4791071A (en) * 1986-02-20 1988-12-13 Texas Instruments Incorporated Dual dielectric gate system comprising silicon dioxide and amorphous silicon
US4874140A (en) * 1987-10-31 1989-10-17 Shimano Industrial Company Limited Fishing reel
US20180096739A1 (en) * 2015-05-26 2018-04-05 Nomura Research Institute, Ltd. Health care system

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58147070A (en) * 1982-02-25 1983-09-01 Mitsubishi Electric Corp Field effect transistor and manufacture thereof
JPH023308B2 (en) * 1982-02-25 1990-01-23 Mitsubishi Electric Corp
US4707721A (en) * 1986-02-20 1987-11-17 Texas Instruments Incorporated Passivated dual dielectric gate system and method for fabricating same
US4791071A (en) * 1986-02-20 1988-12-13 Texas Instruments Incorporated Dual dielectric gate system comprising silicon dioxide and amorphous silicon
JPS63219172A (en) * 1987-03-06 1988-09-12 Hosiden Electronics Co Ltd Thin-film transistor
US4874140A (en) * 1987-10-31 1989-10-17 Shimano Industrial Company Limited Fishing reel
US20180096739A1 (en) * 2015-05-26 2018-04-05 Nomura Research Institute, Ltd. Health care system

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