JPS5559775A - Method of fabricating semiconductor device - Google Patents
Method of fabricating semiconductor deviceInfo
- Publication number
- JPS5559775A JPS5559775A JP13227478A JP13227478A JPS5559775A JP S5559775 A JPS5559775 A JP S5559775A JP 13227478 A JP13227478 A JP 13227478A JP 13227478 A JP13227478 A JP 13227478A JP S5559775 A JPS5559775 A JP S5559775A
- Authority
- JP
- Japan
- Prior art keywords
- metallic layer
- gate electrode
- semiconductor device
- region
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To readily establish the boundaries among a source region, a drain region and a channel region by forming an off-set gate at a gate electrode and using a self- alignment type in a semiconductor device.
CONSTITUTION: A gate insulator film 2 is formed on a P-type silicon substrate 1 to thereby form an N-type channel region 11 therein. Then, a metallic layer 21 is coated on the film 2, and a resist 22 and a metallic layer 23 are sequentially deposited thereon. The, the metallic layer 33 corresponding to the portion except for a gate electrode 24 is removed by an etching process to thereby form a gate electrode 23 and a undercut metallic layer 21 thereon. Then, a source region and a drain region 13, 14 are formed by an ion implantation process therein.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13227478A JPS5559775A (en) | 1978-10-27 | 1978-10-27 | Method of fabricating semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13227478A JPS5559775A (en) | 1978-10-27 | 1978-10-27 | Method of fabricating semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5559775A true JPS5559775A (en) | 1980-05-06 |
JPS6145868B2 JPS6145868B2 (en) | 1986-10-09 |
Family
ID=15077440
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13227478A Granted JPS5559775A (en) | 1978-10-27 | 1978-10-27 | Method of fabricating semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5559775A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10366988B2 (en) | 2015-08-14 | 2019-07-30 | International Business Machines Corporation | Selective contact etch for unmerged epitaxial source/drain regions |
-
1978
- 1978-10-27 JP JP13227478A patent/JPS5559775A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10366988B2 (en) | 2015-08-14 | 2019-07-30 | International Business Machines Corporation | Selective contact etch for unmerged epitaxial source/drain regions |
Also Published As
Publication number | Publication date |
---|---|
JPS6145868B2 (en) | 1986-10-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3472036D1 (en) | Small area thin film transistor | |
JPS57113289A (en) | Semiconductor device and its manufacture | |
JPS5550664A (en) | Semiconductor device and method of fabricating the same | |
JPS57196573A (en) | Manufacture of mos type semiconductor device | |
JPS5559759A (en) | Semiconductor device | |
JPS5559775A (en) | Method of fabricating semiconductor device | |
JPS5627972A (en) | Manufacture of compound semiconductor device | |
JPS5575238A (en) | Method of fabricating semiconductor device | |
JPS52124860A (en) | Electrode formation method for semiconductor devices | |
KR970009617B1 (en) | Contact forming method of semiconductor device | |
JPS5533037A (en) | Manufacture of semiconductor device | |
JPS55121680A (en) | Manufacture of semiconductor device | |
JPS5591879A (en) | Electrostatic induction type transistor | |
JPS641283A (en) | Manufacture of semiconductor device | |
JPS5530873A (en) | High withstand field-effect transistor of mis type | |
JPS5762566A (en) | Manufacture of semiconductor device | |
JPS55102269A (en) | Method of fabricating semiconductor device | |
JPS5518042A (en) | Method of fabricating semiconductor device | |
JPS6484662A (en) | Manufacture of semiconductor device | |
JPS53144687A (en) | Production of semiconductor device | |
JPS57184248A (en) | Manufacture of semiconductor device | |
JPS56104470A (en) | Semiconductor device and manufacture thereof | |
JPS5492180A (en) | Manufacture of semiconductor device | |
JPS5376770A (en) | Production of insulated gate field effect transistor | |
JPS52123878A (en) | Mos type semiconductor device and its production process |