JPS5627972A - Manufacture of compound semiconductor device - Google Patents

Manufacture of compound semiconductor device

Info

Publication number
JPS5627972A
JPS5627972A JP10397579A JP10397579A JPS5627972A JP S5627972 A JPS5627972 A JP S5627972A JP 10397579 A JP10397579 A JP 10397579A JP 10397579 A JP10397579 A JP 10397579A JP S5627972 A JPS5627972 A JP S5627972A
Authority
JP
Japan
Prior art keywords
resist mask
type
mask
coated
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10397579A
Other languages
Japanese (ja)
Inventor
Yasuhiro Ishii
Noriyuki Shimano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP10397579A priority Critical patent/JPS5627972A/en
Publication of JPS5627972A publication Critical patent/JPS5627972A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To facilitate an easy formation of high accuracy and miniature architecture compound semiconductor device by accurately providing the structural dimensions and the relative position relationship of essential components in a step relative to one type of mask in the process. CONSTITUTION:An insulating film 12 is coated on the surface of a semi-insulating GaAs substrate 11, a device region forming resist mask 13 is formed thereon, and an Ntype active layer 14 is formed thereon. Then, an insulating film 15 is coated thereon, a resist mask 16 is formed thereon, and openings are etched through the film 15. Subsequently, a resist mask 17 is formed thereon, and N<+> type layers 18, 19 of source and drain electrode regions are formed thereon. Thereafter, a resist mask 20 is formed thereon, and the P<+> type layer 21 of the gate electrode region is formed thereon. Then, a resist mask 22 is formed theron, and evaporation and lift-off are executed to form ohmic electrode metallic layers 23 and 24 thereon. A resist mask 25 is then formed theron, and ion is implanted to from junction P<+> type mask ctrode 26, and source and drain wires 27 and 28 thereon. Finally, the resist mask 25 is removed therefrom.
JP10397579A 1979-08-17 1979-08-17 Manufacture of compound semiconductor device Pending JPS5627972A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10397579A JPS5627972A (en) 1979-08-17 1979-08-17 Manufacture of compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10397579A JPS5627972A (en) 1979-08-17 1979-08-17 Manufacture of compound semiconductor device

Publications (1)

Publication Number Publication Date
JPS5627972A true JPS5627972A (en) 1981-03-18

Family

ID=14368323

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10397579A Pending JPS5627972A (en) 1979-08-17 1979-08-17 Manufacture of compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS5627972A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57162471A (en) * 1981-03-31 1982-10-06 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
JPS5999717A (en) * 1982-11-29 1984-06-08 Fujitsu Ltd Manufacture of semiconductor device
JPS60253278A (en) * 1984-05-29 1985-12-13 Sony Corp Manufacture of junction type field-effect type semiconductor device
JPS6118126A (en) * 1984-07-04 1986-01-27 Sharp Corp P-n junction forming method
JPS62243369A (en) * 1986-04-15 1987-10-23 Matsushita Electric Ind Co Ltd Manufacture of gaas semiconductor device
US5599389A (en) * 1990-02-14 1997-02-04 Kabushiki Kaisha Toshiba Compound semiconductor and method of manufacturing the same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57162471A (en) * 1981-03-31 1982-10-06 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
JPS5999717A (en) * 1982-11-29 1984-06-08 Fujitsu Ltd Manufacture of semiconductor device
JPS60253278A (en) * 1984-05-29 1985-12-13 Sony Corp Manufacture of junction type field-effect type semiconductor device
JPH0713975B2 (en) * 1984-05-29 1995-02-15 ソニー株式会社 Manufacturing method of junction type field effect semiconductor device
JPS6118126A (en) * 1984-07-04 1986-01-27 Sharp Corp P-n junction forming method
JPS62243369A (en) * 1986-04-15 1987-10-23 Matsushita Electric Ind Co Ltd Manufacture of gaas semiconductor device
US5599389A (en) * 1990-02-14 1997-02-04 Kabushiki Kaisha Toshiba Compound semiconductor and method of manufacturing the same

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