JPS6472567A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6472567A
JPS6472567A JP22875787A JP22875787A JPS6472567A JP S6472567 A JPS6472567 A JP S6472567A JP 22875787 A JP22875787 A JP 22875787A JP 22875787 A JP22875787 A JP 22875787A JP S6472567 A JPS6472567 A JP S6472567A
Authority
JP
Japan
Prior art keywords
film
gate electrode
covered
forming region
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22875787A
Other languages
Japanese (ja)
Inventor
Shigeru Kuroda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP22875787A priority Critical patent/JPS6472567A/en
Publication of JPS6472567A publication Critical patent/JPS6472567A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To facilitate miniaturization and to improve the performance of a MESFET by covering a whole surface except a gate electrode forming region with a high concentration layer for a nonalloy ohmic electrode, forming the sidewall of an insulating film on the peripheral edge of the gate electrode forming region, and then simultaneously forming the gate electrode and the ohmic electrode of the same metal film. CONSTITUTION:The gate electrode forming region of a semiconductor substrate is covered with an insulating film pattern 22, the upper surface including the insulating film 22 is covered with a high concentration layer 15 for a nonalloy ohmic electrode, the film 22 is then removed, the layer 15 for the nonalloy ohmic electrode on the film 22 is simultaneously removed, and the gate electrode forming region is formed with an opening 23. Then, the whole surface is covered with a second insulating film 24, the film 24 is perpendicularly etched, and the film 24 remains on the peripheral edge of the opening 23. Thereafter, the whole surface including the opening 23 is covered with a gate metal film 25, and the film 25 is patterned to form gate and ohmic electrodes.
JP22875787A 1987-09-11 1987-09-11 Manufacture of semiconductor device Pending JPS6472567A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22875787A JPS6472567A (en) 1987-09-11 1987-09-11 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22875787A JPS6472567A (en) 1987-09-11 1987-09-11 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6472567A true JPS6472567A (en) 1989-03-17

Family

ID=16881351

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22875787A Pending JPS6472567A (en) 1987-09-11 1987-09-11 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6472567A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01261870A (en) * 1988-04-13 1989-10-18 Hitachi Ltd Field effect transistor and its manufacture
JPH02309634A (en) * 1989-05-24 1990-12-25 Fujitsu Ltd Manufacture of semiconductor device
JPH05198598A (en) * 1992-01-22 1993-08-06 Mitsubishi Electric Corp Compound semiconductor device and manufacture thereof
JP2012028637A (en) * 2010-07-26 2012-02-09 Sumitomo Electric Ind Ltd Method of manufacturing semiconductor device
US8221377B2 (en) 2006-04-05 2012-07-17 Uni-Charm Corporation Absorbent wearing article and flexible structural unit available thereto

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01261870A (en) * 1988-04-13 1989-10-18 Hitachi Ltd Field effect transistor and its manufacture
JPH02309634A (en) * 1989-05-24 1990-12-25 Fujitsu Ltd Manufacture of semiconductor device
JPH05198598A (en) * 1992-01-22 1993-08-06 Mitsubishi Electric Corp Compound semiconductor device and manufacture thereof
US8221377B2 (en) 2006-04-05 2012-07-17 Uni-Charm Corporation Absorbent wearing article and flexible structural unit available thereto
JP2012028637A (en) * 2010-07-26 2012-02-09 Sumitomo Electric Ind Ltd Method of manufacturing semiconductor device

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