JPS56165360A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56165360A
JPS56165360A JP6937080A JP6937080A JPS56165360A JP S56165360 A JPS56165360 A JP S56165360A JP 6937080 A JP6937080 A JP 6937080A JP 6937080 A JP6937080 A JP 6937080A JP S56165360 A JPS56165360 A JP S56165360A
Authority
JP
Japan
Prior art keywords
type layer
grooves
oxide film
surface oxide
sections
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6937080A
Other languages
Japanese (ja)
Inventor
Daisuke Ueda
Hiromitsu Takagi
Kota Kano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP6937080A priority Critical patent/JPS56165360A/en
Publication of JPS56165360A publication Critical patent/JPS56165360A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor

Abstract

PURPOSE:To simplify a manufacturing process and decrease an area of a contact section of the surfaces of an n type layer and a p type layer by a method wherein an upper layer is penetrated and etched, and said surfaces are exposed and connected electrically by a conductor film. CONSTITUTION:A p type layer 13, an n type layer 14 and a surface oxide film 20' are formed on an n type silicon single crystal substrate 11, to which an n type layer 12 in high concentration is built functioning as a drain. One sections of the surface oxide film 20' are removed and opening sections are formed, and V-shaped grooves 15 are formed by employing etching. Gate oxide films 16 are formed on the grooves 15. A V-shaped groove 18 is formed in the same manner, and gate electrodes 17 and an electrode 19 for connection are formed on the grooves 15, 18.
JP6937080A 1980-05-23 1980-05-23 Manufacture of semiconductor device Pending JPS56165360A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6937080A JPS56165360A (en) 1980-05-23 1980-05-23 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6937080A JPS56165360A (en) 1980-05-23 1980-05-23 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56165360A true JPS56165360A (en) 1981-12-18

Family

ID=13400596

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6937080A Pending JPS56165360A (en) 1980-05-23 1980-05-23 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56165360A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01198076A (en) * 1988-02-02 1989-08-09 Mitsubishi Electric Corp Semiconductor device
WO2000038244A1 (en) * 1998-12-18 2000-06-29 Infineon Technologies Ag Field effect transistor arrangement with a trench gate electrode and an additional highly doped layer in the body region

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54125987A (en) * 1978-02-17 1979-09-29 Siliconix Inc Vmos metha structure and method of fabricating same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54125987A (en) * 1978-02-17 1979-09-29 Siliconix Inc Vmos metha structure and method of fabricating same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01198076A (en) * 1988-02-02 1989-08-09 Mitsubishi Electric Corp Semiconductor device
WO2000038244A1 (en) * 1998-12-18 2000-06-29 Infineon Technologies Ag Field effect transistor arrangement with a trench gate electrode and an additional highly doped layer in the body region

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