JPS56125875A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS56125875A
JPS56125875A JP2850480A JP2850480A JPS56125875A JP S56125875 A JPS56125875 A JP S56125875A JP 2850480 A JP2850480 A JP 2850480A JP 2850480 A JP2850480 A JP 2850480A JP S56125875 A JPS56125875 A JP S56125875A
Authority
JP
Japan
Prior art keywords
film
oxide film
integrated circuit
semiconductor integrated
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2850480A
Other languages
Japanese (ja)
Inventor
Takashi Okuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2850480A priority Critical patent/JPS56125875A/en
Publication of JPS56125875A publication Critical patent/JPS56125875A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To realize high integration by a method wherein an insulating film is selectively formed on a semiconductor substrate, and a conductive layer containing phosphorus is selectively made up on the film. CONSTITUTION:A field oxide film 12 and an oxide film 13 are built up on a P type silicon substrate 11, and a silicon nitride film 14 and a gate electrode 15' in polycrystalline silicon are further formed on the films. A source region 16 and a drain region 17 are made up by means of ion injection. An oxide film 18 is built up on the surface of the gate electrode 15' while phosphorus is diffused to the silicon nitride film 14. An opening is formed which is for ohmic-contact with the source and drain regions 16, 17, and electrode wiring is made up.
JP2850480A 1980-03-06 1980-03-06 Semiconductor integrated circuit device Pending JPS56125875A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2850480A JPS56125875A (en) 1980-03-06 1980-03-06 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2850480A JPS56125875A (en) 1980-03-06 1980-03-06 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS56125875A true JPS56125875A (en) 1981-10-02

Family

ID=12250503

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2850480A Pending JPS56125875A (en) 1980-03-06 1980-03-06 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS56125875A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6043561U (en) * 1983-09-05 1985-03-27 凸版印刷株式会社 Easy-to-open synthetic resin bag with injection port
US4567503A (en) * 1983-06-29 1986-01-28 Stauffer Chemical Company MIS Device employing elemental pnictide or polyphosphide insulating layers
US5712208A (en) * 1994-06-09 1998-01-27 Motorola, Inc. Methods of formation of semiconductor composite gate dielectric having multiple incorporated atomic dopants
US5726087A (en) * 1992-04-30 1998-03-10 Motorola, Inc. Method of formation of semiconductor gate dielectric
JP2003011985A (en) * 2001-06-26 2003-01-15 Kawashima Packaging Mach Ltd Bag packaging item with easily opening structure and packaging machine for making the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4567503A (en) * 1983-06-29 1986-01-28 Stauffer Chemical Company MIS Device employing elemental pnictide or polyphosphide insulating layers
JPS6043561U (en) * 1983-09-05 1985-03-27 凸版印刷株式会社 Easy-to-open synthetic resin bag with injection port
JPH041102Y2 (en) * 1983-09-05 1992-01-14
US5726087A (en) * 1992-04-30 1998-03-10 Motorola, Inc. Method of formation of semiconductor gate dielectric
US5712208A (en) * 1994-06-09 1998-01-27 Motorola, Inc. Methods of formation of semiconductor composite gate dielectric having multiple incorporated atomic dopants
JP2003011985A (en) * 2001-06-26 2003-01-15 Kawashima Packaging Mach Ltd Bag packaging item with easily opening structure and packaging machine for making the same

Similar Documents

Publication Publication Date Title
JPS5736844A (en) Semiconductor device
JPS5775463A (en) Manufacture of semiconductor device
JPS5736842A (en) Semiconductor integrated circuit device
JPS56125875A (en) Semiconductor integrated circuit device
JPS5643749A (en) Semiconductor device and its manufacture
JPS54161282A (en) Manufacture of mos semiconductor device
JPS57162360A (en) Complementary insulated gate field effect semiconductor device
JPS5727069A (en) Mos type simiconductor device
JPS5632757A (en) Insulated gate type transistor and integrated circuit
JPS54121683A (en) Semiconductor device and its manufacture
JPS5740967A (en) Integrated circuit device
JPS55107229A (en) Method of manufacturing semiconductor device
JPS5721865A (en) Manufacture of semiconductor device
JPS5688366A (en) Semiconductor device
JPS56158482A (en) Semiconductor device
JPS5739579A (en) Mos semiconductor device and manufacture thereof
JPS54134579A (en) Mis semiconductor device
JPS56104470A (en) Semiconductor device and manufacture thereof
JPS57128957A (en) Semiconductor integrated circuit device and manufacture thereof
JPS57184248A (en) Manufacture of semiconductor device
JPS572579A (en) Manufacture of junction type field effect transistor
JPS5522878A (en) Insulation gate type field effect semiconductor device
JPS54104782A (en) Mos type semiconductor device
JPS5721855A (en) Manufacture of complementary mos semiconductor device
JPS57207375A (en) Manufacture of semiconductor device