JPS56125875A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS56125875A JPS56125875A JP2850480A JP2850480A JPS56125875A JP S56125875 A JPS56125875 A JP S56125875A JP 2850480 A JP2850480 A JP 2850480A JP 2850480 A JP2850480 A JP 2850480A JP S56125875 A JPS56125875 A JP S56125875A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide film
- integrated circuit
- semiconductor integrated
- circuit device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE:To realize high integration by a method wherein an insulating film is selectively formed on a semiconductor substrate, and a conductive layer containing phosphorus is selectively made up on the film. CONSTITUTION:A field oxide film 12 and an oxide film 13 are built up on a P type silicon substrate 11, and a silicon nitride film 14 and a gate electrode 15' in polycrystalline silicon are further formed on the films. A source region 16 and a drain region 17 are made up by means of ion injection. An oxide film 18 is built up on the surface of the gate electrode 15' while phosphorus is diffused to the silicon nitride film 14. An opening is formed which is for ohmic-contact with the source and drain regions 16, 17, and electrode wiring is made up.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2850480A JPS56125875A (en) | 1980-03-06 | 1980-03-06 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2850480A JPS56125875A (en) | 1980-03-06 | 1980-03-06 | Semiconductor integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56125875A true JPS56125875A (en) | 1981-10-02 |
Family
ID=12250503
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2850480A Pending JPS56125875A (en) | 1980-03-06 | 1980-03-06 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56125875A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6043561U (en) * | 1983-09-05 | 1985-03-27 | 凸版印刷株式会社 | Easy-to-open synthetic resin bag with injection port |
US4567503A (en) * | 1983-06-29 | 1986-01-28 | Stauffer Chemical Company | MIS Device employing elemental pnictide or polyphosphide insulating layers |
US5712208A (en) * | 1994-06-09 | 1998-01-27 | Motorola, Inc. | Methods of formation of semiconductor composite gate dielectric having multiple incorporated atomic dopants |
US5726087A (en) * | 1992-04-30 | 1998-03-10 | Motorola, Inc. | Method of formation of semiconductor gate dielectric |
JP2003011985A (en) * | 2001-06-26 | 2003-01-15 | Kawashima Packaging Mach Ltd | Bag packaging item with easily opening structure and packaging machine for making the same |
-
1980
- 1980-03-06 JP JP2850480A patent/JPS56125875A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4567503A (en) * | 1983-06-29 | 1986-01-28 | Stauffer Chemical Company | MIS Device employing elemental pnictide or polyphosphide insulating layers |
JPS6043561U (en) * | 1983-09-05 | 1985-03-27 | 凸版印刷株式会社 | Easy-to-open synthetic resin bag with injection port |
JPH041102Y2 (en) * | 1983-09-05 | 1992-01-14 | ||
US5726087A (en) * | 1992-04-30 | 1998-03-10 | Motorola, Inc. | Method of formation of semiconductor gate dielectric |
US5712208A (en) * | 1994-06-09 | 1998-01-27 | Motorola, Inc. | Methods of formation of semiconductor composite gate dielectric having multiple incorporated atomic dopants |
JP2003011985A (en) * | 2001-06-26 | 2003-01-15 | Kawashima Packaging Mach Ltd | Bag packaging item with easily opening structure and packaging machine for making the same |
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