JPS5727069A - Mos type simiconductor device - Google Patents

Mos type simiconductor device

Info

Publication number
JPS5727069A
JPS5727069A JP10224480A JP10224480A JPS5727069A JP S5727069 A JPS5727069 A JP S5727069A JP 10224480 A JP10224480 A JP 10224480A JP 10224480 A JP10224480 A JP 10224480A JP S5727069 A JPS5727069 A JP S5727069A
Authority
JP
Japan
Prior art keywords
region
under
silicon
shallow
channel region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10224480A
Other languages
Japanese (ja)
Inventor
Atsushi Iwamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10224480A priority Critical patent/JPS5727069A/en
Publication of JPS5727069A publication Critical patent/JPS5727069A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
    • H01L29/78615—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect with a body contact

Abstract

PURPOSE:To take out a semiconductor layer under a channel region to the outside without being restricted by forming a region connected through a semiconductor layer section under a drain region with a shallow junction in a MOS/a SOS. CONSTITUTION:An insular P type silicon layer 102 is shaped onto a sapphire substrate 101, and N<+> type shallow source and drain regions 103, 104 are formed to the layer 102. A gate electrode 107 in polycrystal silicon is shaped onto the channel region 105 through a gate insulating film 106. A P<+> type silicon region 109 connected through a silicon layer under the channel region 105 and a silicon layer section 108 under the shallow drain region 104 is molded to a section adjacent to the drain region 104.
JP10224480A 1980-07-25 1980-07-25 Mos type simiconductor device Pending JPS5727069A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10224480A JPS5727069A (en) 1980-07-25 1980-07-25 Mos type simiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10224480A JPS5727069A (en) 1980-07-25 1980-07-25 Mos type simiconductor device

Publications (1)

Publication Number Publication Date
JPS5727069A true JPS5727069A (en) 1982-02-13

Family

ID=14322197

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10224480A Pending JPS5727069A (en) 1980-07-25 1980-07-25 Mos type simiconductor device

Country Status (1)

Country Link
JP (1) JPS5727069A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4633282A (en) * 1982-10-04 1986-12-30 Rockwell International Corporation Metal-semiconductor field-effect transistor with a partial p-type drain
EP0225821A2 (en) * 1985-10-31 1987-06-16 Fujitsu Limited Semiconductor device having a silicon on insulator structure
JPS63215077A (en) * 1987-03-04 1988-09-07 Agency Of Ind Science & Technol Mos transistor
US4864377A (en) * 1987-05-26 1989-09-05 U.S. Philips Corp. Silicon on insulator (SOI) semiconductor device
US4969023A (en) * 1987-08-24 1990-11-06 Asea Brown Boveri Ab SOS transistor structure
USH1435H (en) * 1991-10-21 1995-05-02 Cherne Richard D SOI CMOS device having body extension for providing sidewall channel stop and bodytie

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4633282A (en) * 1982-10-04 1986-12-30 Rockwell International Corporation Metal-semiconductor field-effect transistor with a partial p-type drain
EP0225821A2 (en) * 1985-10-31 1987-06-16 Fujitsu Limited Semiconductor device having a silicon on insulator structure
US4809056A (en) * 1985-10-31 1989-02-28 Fujitsu Limited Semiconductor device having a silicon on insulator structure
JPS63215077A (en) * 1987-03-04 1988-09-07 Agency Of Ind Science & Technol Mos transistor
US4864377A (en) * 1987-05-26 1989-09-05 U.S. Philips Corp. Silicon on insulator (SOI) semiconductor device
US4969023A (en) * 1987-08-24 1990-11-06 Asea Brown Boveri Ab SOS transistor structure
USH1435H (en) * 1991-10-21 1995-05-02 Cherne Richard D SOI CMOS device having body extension for providing sidewall channel stop and bodytie

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